TRANSISTOR A06 Search Results

Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06

marking A06

Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application

Contextual Info: fcT I ISI E G 2SC D • Ö235b05 G0G4352 T NPN Silicon Planar Transistor BD 424 T- 23- o f SIEMENS AKTIEN6ESELLSCHAF 25C 04352 BD 424 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. It is particularly intended for use as driver transistor in horizontal deflection stages of TV sets

Transistor 2SC 2166

Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Contextual Info: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.

c111m

Abstract: Transistor 2SC 2166 TRANSISTOR C-111 Q62702-S355 Q62702-S428 1E0C BSV65 Q62702-S347 Q62702-S348 Q62702-S406
Contextual Info: ESC D • aE 35b05 0 0 0 4 6 0 2 H ■ S I E G NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - , ° y v jr-// BSV 65 ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 23 A 3 DIN 41869 designed for use in thick and thin film circuits.

Contextual Info: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications

a0629

Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
Contextual Info: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.

sta06

Abstract: mark T116
Contextual Info: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications

transistor A2210

Abstract: ENA0667B 2sa2210 2SA2210-1E
Contextual Info: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

transistor A2210

Abstract: 2SA2210
Contextual Info: 2SA2210 Ordering number : ENA0667B SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

transistor A2210

Abstract: a2210 2sa2210
Contextual Info: 2SA2210 Ordering number : ENA0667A SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes

2SA2210

Abstract: equivalent transistor 2sa2210 A0667-1 2SA221 A0667
Contextual Info: 2SA2210 Ordering number : ENA0667 SANYO Semiconductors DATA SHEET 2SA2210 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Relay drivers, lamp drivers, motor drivers. Features • • • • Adoption of MBIT processes.

2SC6084

Contextual Info: 2SC6084 Ordering number : ENA0630 SANYO Semiconductors DATA SHEET 2SC6084 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability (Adoption of HVP process).

2SA2210-1E

Abstract: transistor A2210
Contextual Info: Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com –50V, –20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • • Adoption of MBIT processes Low collector-to-emitter saturation voltage

A06 smd

Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

MMDTA06

Abstract: a06 transistor marking a06
Contextual Info: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

a06 smd transistor

Abstract: A06 SMD SMD A06 smd marking A06 A05 smd a06 transistor transistor A05 marking A06 CMBTA05 CMBTA06
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration

P2640

Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
Contextual Info: TP2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

P-Channel FET 100v to92

Abstract: FAST DMOS FET Switches p-CHANNEL 125OC TP2635
Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: VN2224 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2224 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing

Contextual Info: TP2635 P-Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling

Contextual Info: VN2222NC N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex VN2222NC is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.

Contextual Info: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 "^^009 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.89" 0.60 0.40