AE35B05 Search Results

Transistor 2SC 2166

Abstract: transistor IR 652 P 2166 1j1 bsv 81 X12X15
Contextual Info: ESC D • aE35b05 0004602 H ■ S I E G , yvjr-// NPN Transistor for Switching Applications SIEMENS AKTIENGESELLSCHAF - BSV 65 ° ' BSV 65 is an epitaxial NPN silicon planar switching transistor in TO 2 3 6 plastic package 2 3 A 3 DIN 4 1 8 6 9 designed for use in thick and thin film circuits.

fn521

Abstract: 24C164 Q67100-H3232 Q67100-H3500 Q67100-H3501 Q67100-H3505 Q67100-H3506
Contextual Info: Û235b05 OCHÖTIÖ 553 S IE M E N S 16 K bit 2048 x 8 bit Serial C M O S E E P R O M s, I 2C S yn ch ro no u s 2-W ire Bus S L x 24C 164 Preliminary Features > Data EEPROM internally organized as 2048 bytes and 128 pages x 16 bytes • Low power CMOS • Vcc = 2.7 to 5.5 V operation

d1117

Abstract: AES02079 AEB02072
Contextual Info: S IEM EN S TrilithIC BTS 771 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low Rds on @ 25 °C: High-side switch: typ. 85 mQ,

Contextual Info: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width

Contextual Info: SIEMENS Standard EEPROM ICs SLx 24C08/16 8/16 Kbit 1024/2048 x 8 bit Serial CM O S-EEPRO M with I2C Synchronous 2-Wire Bus D atasheet 1998-07-27 ÖHBSbQS O l l W S TSS I SLx 24C08/16 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page

TRANSISTOR SMD MARKING CODE XI

Contextual Info: • 0235bOS OD^bbOl 422 SIEMENS 5-V L ow -D rop Fixed V oltage R egulator T L E 4269 Features • • • • • • • • • • Output voltage tolerance < ± 2 % Very low current consumption Early warning Reset output low doown to VQ = 1 V Overtemperature protection

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

SDA9060

Contextual Info: SIEMENS AKTIENG ESE LLSCHAF S1E ]> • fl23SbüS OOMMMbO Ô13 H S I E 6 SIEMENS 'T'52W7 Video D/A Processor SDA 9060 Preliminary Data MOS 1C Type Ordering code Package SDA 9060 Q 67100 -H 8381 P-D IP-28 Description of Functions and Applications In conjunction with the DM SD Digital M ulti-Standard Decoder and the RGB signal pro­

18P06P

Abstract: Q67040-S4189
Contextual Info: SPD 18P06P SPU 18P06P Preliminary Data SIPMOS Small-Signal-T ransistor Features • P Product Summary Channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance ^bs on 0.13 -18.6 b Continuous drain current V -60 Drain source voltage

AEB02072

Abstract: AES02079 GPS05123
Contextual Info: SIEM EN S TrilithlC BTS 770 Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low RDSou @ 25 °C: High-side switch: typ.165 mQ,

Contextual Info: SIEMENS 16M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V1620GS-50/-60 HYM 72V1630GS-50/-60 Preliminary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line Memory Module • 1 bank 16 M x 72 organisation • Optimized for ECC applications

Contextual Info: SIEMENS BUZ 93 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 93 Vds 600 V 3.6 A ffDS on 2.5 n Package Ordering Code TO-220 AB C67078-S1343-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

siemens rs 1016

Abstract: 012E3
Contextual Info: SIEMENS CGY 120 GaAs MMIC • • • • • • • Monolithic microwave IC MMIC-Amplifier for mobile communication Variable gain amplifier for GSM/PCN applications Gain Control range over 50dB 50Q input and output matched Low power consumption Operating voltage range: 2.7 to 6 V

Contextual Info: SIEMENS Preliminary IC-SPECIFICATION TDA 6060XS, TDA 6060G Multistandard Modulator / PLL gage 1 Contents 2 Functional Description, Application Pin Definition and Function 3 4 Block Diagram Circuit Description 5-10 11 Pinning, Package 12 Absolute Maximum Ratings

Contextual Info: SIEMENS BCR 08PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=2.2kD, R2=47kiî) Cl Tape loading orientation

Contextual Info: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: ICs for Communications Synchronous Digital Hierarchy Transceiver SDHT PXB 4240 Version 1.2 Preliminary Data Sheet 10.96 T4240-X V 12- • fiEBSbDS 0Cnfl737 343 ■ -7600 \ Edition 10.96 This edition was realized using the software system FrameMaker . Published by Siemens AG,

Contextual Info: SPD 08P06P SPU 08P06P P re lim in ary Data SIPMOS Power Transistor • P-Channel 3 / • Enhancement mode • Avalanche rated Î VPT09051 VPTÛ9050 • d v /d t rated • 175°C operating tem perature Type Vfes b f f D S io n i SPD08P06P -60 V -8.8 A 0.3 ß

zo 103 ma

Abstract: transistor ZO 103 MA siemens OF IC 741 SS 424 02 31 zo 103 ma 75 750 MARKING CODE F5T Q62702-F1104 BFQ 51 ZO 103 NA BFQ73S
Contextual Info: SIEMENS NPN Silicon RF Transistor BFQ 73S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.

BTS 177

Abstract: BTS 304
Contextual Info: SIEMENS BTS 542 D PRÜFET • High-side switch • Short-circuit protection • Overtemperature protection • Overload protection • Load dump protection • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Reverse battery protection

83C517A

Abstract: PI7Z sab80c517
Contextual Info: LOE D • fl235bD5 G0M7CIÔ4 533 SIEMENS SIEG SIEMENS AKTIENGESELLSCH 7 High-Performance 8-Bit CMOS Single-Chip Microcontroller -^ ? -/? -¿ > 7 SAB 80C517A / 83C517A-5 Preliminary SAB 83C517A-5 SAB 80C517A Microcontroller with factory mask-programmable ROM

B23 zener diode

Abstract: zener Diode B23 BTS710 BTS710L1 BTS711L1 710L1
Contextual Info: • fi23SbGS 00^3103 SIEMENS TIR ■ PROFET BTS 710 L1 Smart Four Channel Highside Power Switch Product Summary Features • • • • • • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection

Contextual Info: SDA 9288X Revision History: Current Version: 03.96 Previous Version: Page in previous Version Page (in new Version) Subjects (major changes since last revision) 25.1.1994: Preliminary Specification V1.1 22; 23; 24 25.1.1994: warnings 24 25.1.1994: additional bits VSIISQ, VSPISQ at subad. 07/08

Contextual Info: • flEi35L.05 00^2755 115 ■ SIEMENS PROFET BTS432D2 Smart Highside Power Switch Product Summary Features * Load dump and reverse battery protection1 80 VLoad dump * Clamp of negative voltage at output 58 Vbb-VouT Avalanche Clamp * Short-circuit protection