P2640 Search Results
P2640 Price and Stock
Microchip Technology Inc TP2640N3-GTransistor MOSFET P-CH 400V 0.18A 3-Pin TO-92 |
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TP2640N3-G |
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TP2640N3-G | Bag | 1,000 |
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TP2640N3-G | 826 |
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TP2640N3-G | Bulk | 1,000 |
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TP2640N3-G | Bulk | 6 Weeks | 1,000 |
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TP2640N3-G | Bag | 4,700 | 28 Weeks |
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TP2640N3-G | 6 Weeks | 1,000 |
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TP2640N3-G | 4,798 |
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Microchip Technology Inc TP2640LG-GTrans MOSFET P-CH Si 400V 0.21A 8-Pin SOIC N T/R |
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TP2640LG-G |
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TP2640LG-G | Tape & Reel | 15 Weeks | 3,300 |
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TP2640LG-G | 1,051 |
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TP2640LG-G | Tape & Reel | 3,300 |
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TP2640LG-G | Bulk | 6 Weeks | 3,300 |
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TP2640LG-G | Tape & Reel | 14 Weeks |
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TP2640LG-G | 85 |
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TP2640LG-G | 8 Weeks | 3,300 |
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TP2640LG-G | 7 Weeks | 3,300 |
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Monolithic Power Systems MP2640GR-PINTEGTATED 3A BI-DIRECTIONAL ACTIVE BALANCER - Tape and Reel (Alt: MP2640GR-P) |
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MP2640GR-P | Tape & Reel | 48 Weeks | 500 |
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Monolithic Power Systems MP2640GR-ZINTEGTATED 3A BI-DIRECTIONAL ACTIVE BALANCER - Tape and Reel (Alt: MP2640GR-Z) |
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MP2640GR-Z | Tape & Reel | 44 Weeks | 5,000 |
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KOA Speer Electronics Inc RN73H1ETTP2640D25Thin Film Resistors - SMD 264Ohm,0402,0.5%,25p pm,63mW,50V |
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RN73H1ETTP2640D25 | 9,777 |
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RN73H1ETTP2640D25 | 10,000 |
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P2640 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DATA SHEET CLL032-1212A5-273H7E1 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2640 12/13 DATA SHEET 1/11 1. Scope of Application |
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cll032-1212a5-273h7e1ce-p26402700k97typ | |
P2640
Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
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tp2640dsfp-tp2640a062609p2640+4 | |
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Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► P2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown |
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tp2640dsfp-tp2640b081613 | |
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Contextual Info: P2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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tp2640dsfp-tp2640a091608 | |
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Contextual Info: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. @ COPYRIGHT 19 BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 DESCRIPTION LTR REV PER EC O U B O -0 0 0 9 -0 1 D 1. DIM ENSIO NS IN 2. 0 .5 INSERTION 3. 55 dB dB MAX MIN [ ] RETURN |
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05jan0123feb931t4fle-q88ompmhb507m+1 | |
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Contextual Info: P2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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tp2640dsfp-tp2640a042709 | |
a1026
Abstract: TP2640N3-G
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tp2640ms-012dsfp-tp2640a102607+2 | |
oi9tContextual Info: ORAMi m MADE IN TMIftD AMOLE PROJECTION - ._ I_ 1 THIS DRAWING IS UNPUBLISHED. | RELEASED FOR PUBLICATION COmtlSKT 19 * T AMP IIW a U I B I . *LL IW IBIM TM M U . UK ,19 OIST CE 16 |
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ce-1598ce-1739ce-2053ce-2779+4 | |
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Contextual Info: P2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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tp2640dsfp-tp2640a062609 |