P2640 Search Results
P2640 Price and Stock
KOA Speer Electronics Inc RN73R1ETTP2640B25RES 264 OHM 0.1% 1/16W 0402 |
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RN73R1ETTP2640B25 | Cut Tape | 8,360 | 1 |
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KOA Speer Electronics Inc RN73H1ETTP2640F25RES 264 OHM 1% 1/16W 0402 |
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RN73H1ETTP2640F25 | Digi-Reel | 7,056 | 1 |
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RN73H1ETTP2640F25 | 7,077 |
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Microchip Technology Inc TP2640LG-GMOSFET P-CH 400V 86MA 8SOIC |
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TP2640LG-G | Cut Tape | 4,563 | 1 |
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TP2640LG-G | Reel | 6 Weeks | 3,300 |
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TP2640LG-G | 1,640 |
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TP2640LG-G | Reel | 3,300 |
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TP2640LG-G | Reel | 6 Weeks |
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TP2640LG-G | 1 |
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TP2640LG-G | 3,300 |
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TP2640LG-G | 8 Weeks | 3,300 |
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TP2640LG-G | 7 Weeks | 3,300 |
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TP2640LG-G |
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Schneider Electric LAP26400MBMOLDED CASE CIRCUIT BREAKER 600V |
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LAP26400MB | Box | 1 |
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KOA Speer Electronics Inc RN731ETTP2640F50RES 264 OHM 1% 1/16W 0402 |
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RN731ETTP2640F50 | Reel |
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P2640 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DATA SHEET CLL032-1212A5-273H7E1 and are trademarks or registered trademarks of CITIZEN HOLDINGS CO., LTD. JAPAN. is a trademark or a registered trademark of CITIZEN ELECTRONICS CO., LTD. JAPAN. Ref.CE-P2640 12/13 DATA SHEET 1/11 1. Scope of Application |
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CLL032-1212A5-273H7E1 CE-P2640 CLL032-1212A5-273H7E1. 2700K 97typ | |
P2640
Abstract: 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel
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TP2640 DSFP-TP2640 A062609 P2640 125OC TP2640 TP2640ND TP2640LG-G to92 fet p channel | |
Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► P2640 General Description Low threshold -2.0V max. High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown |
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TP2640 DSFP-TP2640 B081613 | |
Contextual Info: P2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2640 DSFP-TP2640 A091608 | |
Contextual Info: RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. @ COPYRIGHT 19 BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. CE DIST REVISIONS 16 DESCRIPTION LTR REV PER EC O U B O -0 0 0 9 -0 1 D 1. DIM ENSIO NS IN 2. 0 .5 INSERTION 3. 55 dB dB MAX MIN [ ] RETURN |
OCR Scan |
05JAN01 23FEB93 1T4flE-Q88 ompMHB507M p26400/edminod | |
Contextual Info: P2640 P- Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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TP2640 DSFP-TP2640 A042709 | |
a1026
Abstract: TP2640N3-G
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TP2640 MS-012, TP2640 DSFP-TP2640 A102607 a1026 TP2640N3-G | |
oi9tContextual Info: ORAMi m MADE IN TMIftD AMOLE PROJECTION - ._ I_ 1 THIS DRAWING IS UNPUBLISHED. | RELEASED FOR PUBLICATION COmtlSKT 19 * T AMP IIW a U I B I . *LL IW IBIM TM M U . UK ,19 OIST CE 16 |
OCR Scan |
CE-1598 CE-1739 CE-2053 CE-2779 OS/90 IM/10 1490-ISMV oi9t | |
Contextual Info: P2640 P- Channel Enhancement-Mode Vertical DMOS FET General Description Features This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling |
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TP2640 DSFP-TP2640 A062609 |