TRANSISTOR A 928 Search Results

J231 transistor

Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Contextual Info: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

linfinity

Abstract: LX8816
Contextual Info: A LINFINITY M I C R O S E M I LX8816 Dual Channel 1A Low Dropout Regulator C O M P A N Y P RELIMINARY KEY FEATURES DESCRIPTION enabling precise output voltages, typically ±1% of it’s specified value, while the BiPolar output transistor has a low dropout voltage even at full output

RFPA2172PCK-411

Contextual Info: RFPA2172 RFPA2172 ISM Band 3.6V, 250mW AMP with Analog Gain Control The RFPA2172 is a medium-power high efficiency amplifier IC targeting 3.6 V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor HBT process, and

Contextual Info: LX8819 Dual Channel 1A Low Dropout Regulator TM D ATA S HEET Voltages typically ±1% of its specified value while the Bipolar output transistor has a low dropout voltage even at full output current (VDO < 1.25V typical @ 1A). Thermal and Short Circuit Current

transistor 603

Abstract: transistor smd 303 circuit diagram of rfid gate SLD-2083
Contextual Info: SLD-2083CZ Product Description Pb RoHS Compliant & Green Package 12 Watt Discrete LDMOS FET in Ceramic Package Sirenza Microdevices’ SLD-2083CZ is a robust 12 Watt high performance LDMOS transistor designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency at

HN3C09F

Contextual Info: TOSHIBA HN3C09F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N3C09F Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • + 0.2 Including Two Devices in SM6 Super Mini Type with 6 Leads M A X IM U M RATINGS (Ta = 25°C) SYMBOL v CBO

RF2119

Abstract: PSSOP16 F2119
Contextual Info: RF RF2119 Preliminary M ICRO-DEVICES POWER AMPLIFIERS H IG H E F F IC IE N C Y 2 V POW ER A M P L IF IE R ufactured on an advanced Gallium Arsenide Heterojunc­ tion Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in hand-held

ra01l8693ma

Abstract: RF MOSFET MODULE ra MITSUBISHI marking example
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA01L8693MA RoHS Compliance , 865-928MHz 1.4W 3.3V, 2 Stage Amp. For RFID READER / WRITER DESCRIPTION The RA01L8693MA is a 1.4-watt RF MOSFET Amplifier Module. The battery can be connected directly to the drain of the

cs1w-cn226

Abstract: OMRON PRO27 programming console omron sysmac cpm1 technical data nt2s-cn222-v1 OMRON PRO27 Operation Manual OMRON E5AF CPM2C-32CDTC-D pro27 OMRON Operation Manual CPM2C-32CDTM-D NT-CN221
Contextual Info: Compact PLC Series CPM2C Programmable Logic Contr. General The CPM2C Micro PLC is suitable as a controller for simple stand−alone machines, as well as a simple networked controller. One innovation is the new synchronisation instruction, which makes it possible to generate output pulse trains as a function of an input pulse

Transistor BFR 30

Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
Contextual Info: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1

SGA6489Z

Abstract: IC 7489 JESD22-B102-C SGA6389Z SGA-5589Z SGA-7489 SGA-6489 SGA-9289Z SGA9189Z SGC-6489
Contextual Info: Reliability Report SGA/SGC Series in SOT-89 Package SnPb Plated SGA-5289 SGA-5389 SGA-5489 SGA-5589 SGA-6289 SGA-6389 SGA-6489 SGA-6589 SGA-7489 SGA-9089 SGA-9189 SGA-9289 Matte Sn, RoHS Compliant SGA-5289Z SGA-5389Z SGA-5489Z SGA-5589Z SGA-6289Z SGA-6389Z

CPM2C

Abstract: CPM2C-24EDT 200T1 CPM2C-CIF01-V1 A106 Micro Capacitor CPM2c-32EDT 3G3HV manual CQM1-CIF11 inverter omron 3G3HV transistor pnp a110
Contextual Info: Micro Programmable Controller CPM2C Omron’s powerful CPM2C micro controller redefines the traditional micro PLC. The CPM2C’s 33 mm width allows it to fit into small spaces, offers 119 instructions, and has processing speeds rivaling many ‘small’ PLCs.

EE-SX

Abstract: OMRON EE-sx 412 pnp phototransistor transistor w2a EE-SX670A EE-SX672A EE-SX67 w2a transistor EE-SX671A EE-SX871
Contextual Info: Back Photomicrosensor EE-SX67/47 Photomicrosensor with 50- to 100-mA Switching Capacity that can be Built into Equipment PNP output models newly added. Standard, L-shaped, T-shaped, and Close-mounting: Five series of models available. Select from thirty output variations, including

MTA4N60E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTA4N60E Fully Isolated TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 600 VOLTS RDS on = 1-20 OHM

Contextual Info: RF2172 Preliminary

     
  
        • Bluetooth PA • 902MHz to 928MHz ISM Band Systems • Portable Battery-Powered Equipment • 2.4GHz to 2.5GHz ISM Band Systems • Spread-Spectrum Systems
   

vhf linear amplifier mrf245

Abstract: amplifier mrf245 mrf247 OMRON lzn2 MRF240 2N6084 equivalent MRF245 DATA SPEC NF2-12 LZN2-UA-DC12 mrf245
Contextual Info: Order this document by AN791/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN791 A SIMPLIFIED APPROACH TO VHF POWER AMPLIFIER DESIGN Prepared by: Helge O. Granberg RF Circuits Engineering This note discusses the design of 35-W and 75-W VHF linear amplifiers. The construction technique

rc 4506

Abstract: ELS 300 E-T PROCESS CONTROL TIMER application M34506M2-XXXFP M34506M4-XXXFP PRSP0020DA-A M34506E4FP A-6390
Contextual Info: REJ09B0194-0201 4506 Group 4 User's Manual RENESAS 4-BIT CISC SINGLE-CHIP MICROCOMPUTER 4500 SERIES Before using this material, please visit our website to confirm that this is the most current document available. Rev. 2.01 Revision date: Feb 07, 2005 www.renesas.com

SKS 1/17

Abstract: ELS 300 E-T TDA 4501 K13 transistor PU23 up 5135 00FF M34501E4FP M34501M2-XXXFP M34501M4-XXXFP
Contextual Info: REJ09B0192-0201 4501 Group 4 User's Manual RENESAS 4-BIT CISC SINGLE-CHIP MICROCOMPUTER 4500 SERIES Before using this material, please visit our website to confirm that this is the most current document available. Rev. 2.01 Revision date: Feb 07, 2005 www.renesas.com

Contextual Info: Bulletin No. CUB7-E red Ibn Tel +1 717 767-6511 Fax +1 Drawing No, LP0336 Released 7/02 J W (717) 764-0839 www.redlion-controls.com M ODEL CUB7 - M INIATURE ELECTRO NIC 8 D IG IT CO UNTER • LCD, POSITIVE IMAGE REFLECTIVE OR NEGATIVE IMAGE TRANSM ISSIVE WITH YELLOW /GREEN OR RED LED

CBL-202

Abstract: OMRON Cbl-804 OMRON Cbl-804 pin out CPM1-CIF01 PIN OUT CBL-804 OMRON Cpm2b CQM1H-CIF12 PLC to pc Communication cables pin diagram omron AR2315 CPM2B-32EDT
Contextual Info: Micro Controller Board CPM2B The CPM2B series programmable controllers offer the powerful features and advanced technology of Omron’s brick style micros in a board package. These controllers give you advantages in programming flexibility, reduced development cost and significant space

sot23-123

Abstract: LCD PANASONIC INVERTER DIAGRAM LTST-C170KRKT lm555 LX1801 2N2222AUB r23 transistor LM555CM LX1972 power supply tester schematic diagram
Contextual Info: LX1801 EVALUATION BOARD USER GUIDE LX1801 SMBus TO ANALOG & DIGITAL SYSTEM INTERFACE Copyright 2002 Rev. 1.0, 2006-11-17 Microsemi Integrated Products 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX1801 EVALUATION BOARD USER GUIDE

TIP 40c transistor

Abstract: 2.4GHz Cordless Phone circuit diagram apc ups schematic RF2172 C104pf
Contextual Info: RF2172 2 ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL Typical Applications • BluetoothTM PA • 3.6V Spread-Spectrum Cordless Phones • 2.4GHz to 2.5GHz ISM Band Systems • Portable Battery-Powered Equipment • 902MHz to 928MHz ISM Band Systems • Spread-Spectrum Systems

SLD-1083CZ

Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Contextual Info: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features „ „ „ 4 Watt Output P1dB Single Polarity Supply Voltage