TRANSISTOR A 928 Search Results

MARKING P2Z

Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Contextual Info: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to

J231 transistor

Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Contextual Info: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe

SGA-9289

Abstract: j392 J231 transistor SGA-9289Z
Contextual Info: Preliminary Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

transistor 502

Abstract: transistor BF 502 transistor BF 506 BF502
Contextual Info: ESC D • ÔSBSbQS ÛQQ45GS ■SIEG ^ 7^-î/- z * NPN Silicon RF Transistor BF502 SIEMENS AKT IEN GE SE LL SC H AF >4505 0 - | BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package 1 0 A 3 D I N 4 1 868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

NEC NF 932

Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

RU901

Contextual Info: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrt*h7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 * n 7|g|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95

transistor ITT 2907

Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Contextual Info: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz

BFR92A

Abstract: Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR92AR BFR 450 Transistor BFR 30
Contextual Info: TELEFUNKEN Semiconductors BFR 92 A / BFR 92 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking Plastic case SOT 23

Transistor BFR 90 application

Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93
Contextual Info: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23

2N2907ADIE

Abstract: MICROSEMI 2N2907A ST 2n2907a die 2N2907A 10VDC MSC0948
Contextual Info: 2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS

MICROSEMI 2N2222A

Abstract: 2n2222a die 2N2222A JANTXV 10VDC Transistor 2N2222A 2N2222A chip die npn transistor Transistor 2N2222A microsemi
Contextual Info: 2N2222A DIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS

HS2907A

Abstract: JANTX2N2907AUB JANTX2N2907A JANTXV2N2907A JANTXV2N2907AUB JANTXV2N2907 4VDC60 JANTX2N2907 HS2907
Contextual Info: JANTXV2N2907AUB A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 HSOT PRODUCT SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n I.A.W. MIL-PRF-19500/291 n SMALL OUTLINE SURFACE MOUNT PACKAGE n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS

TRANSISTOR bu 406

Contextual Info: ViSH A Y _ BFQ81 _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to 2 GHz, especially fo r m obile telephone.

500 watt mosfet power amplifier circuit diagram

Abstract: 1000 watt mosfet power amplifier 50 Watt MOSFET amplifier
Contextual Info: Preliminary SLD2000 Product Description The SLD2000 is a 10 Watt, high performance LDMOS transistor die, designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used as a

pmi dac08

Abstract: DAC08
Contextual Info: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor

Contextual Info: ViSH A Y _ ▼ BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For broadband amplifiers up to 1 GHz. Features • High power gain

fr93

Abstract: Transistor BFR 96 BFR 36.2
Contextual Info: ViSHAY _ B FR93 A/B FR93 AR/B FR93 AW ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications W ide band a m plifier up to GHz range. Features • High pow er gain

Contextual Info: m a n A M P com pany RF MOSFET Power Transistor, 40W, 28V 100 - 500 MHz UF2840P Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Low er Capacitances for Broadband Operation Com m on Source Configuration Lower Noise Floor D •ii