TRANSISTOR A 928 Search Results

MARKING P2Z

Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Contextual Info: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to

J231 transistor

Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Contextual Info: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe

SGA-9289

Abstract: j392 J231 transistor SGA-9289Z
Contextual Info: Preliminary Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount

transistor 502

Abstract: transistor BF 502 transistor BF 506 BF502
Contextual Info: ESC D • ÔSBSbQS ÛQQ45GS ■SIEG ^ 7^-î/- z * NPN Silicon RF Transistor BF502 SIEMENS AKT IEN GE SE LL SC H AF >4505 0 - | BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package 1 0 A 3 D I N 4 1 868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

NEC NF 932

Abstract: ZO 103 MA 75 623 2SC5009 2SC5009-T1 TD-2430 power transistor 3055
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS in milimeters noise figure, high gain, and high current capability achieve a very wide 1.6± 0.1 0.8± 0.1 dynamic range and excellent linearity. This is achieved by direct nitride

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

Ericsson 20082

Contextual Info: ERICSSON ^ PTB 20082 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20082 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts output power, it may be used for both CW and PEP applications. Ion

RU901

Contextual Info: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrt*h7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 * n 7|g|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95

BFR92A

Abstract: Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR92AR BFR 450 Transistor BFR 30
Contextual Info: TELEFUNKEN Semiconductors BFR 92 A / BFR 92 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking Plastic case SOT 23

transistor 8550

Abstract: CL8550 8550 transistor h 8550 pnp transistor
Contextual Info: CL8550 T 0 -9 2 B oENERAL DESCRIPTION:— The 8550 is a PNP epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuits. Complementary to 8050. ABSOLUTE M A X IM U M R A T IN G S „ T O -928 (Note 1) Maximum Temperatures

philips carbon film resistor

Abstract: blw98 transistor carbon resistor BLW98
Contextual Info: N AMER PHILIPS/DISCRETE bTE D □ DS'iSBS ‘ibD BLW98 b b S B 'm IAPX A U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.

Transistor BFR 90 application

Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93
Contextual Info: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23

2N2907ADIE

Abstract: MICROSEMI 2N2907A ST 2n2907a die 2N2907A 10VDC MSC0948
Contextual Info: 2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS

MICROSEMI 2N2222A

Abstract: 2n2222a die 2N2222A JANTXV 10VDC Transistor 2N2222A 2N2222A chip die npn transistor Transistor 2N2222A microsemi
Contextual Info: 2N2222A DIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR NPN SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/255 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS

HS2907A

Abstract: JANTX2N2907AUB JANTX2N2907A JANTXV2N2907A JANTXV2N2907AUB JANTXV2N2907 4VDC60 JANTX2N2907 HS2907
Contextual Info: JANTXV2N2907AUB A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 HSOT PRODUCT SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n I.A.W. MIL-PRF-19500/291 n SMALL OUTLINE SURFACE MOUNT PACKAGE n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS

TRANSISTOR bu 406

Contextual Info: ViSH A Y _ BFQ81 _ ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF a m plifier up to 2 GHz, especially fo r m obile telephone.

500 watt mosfet power amplifier circuit diagram

Abstract: 1000 watt mosfet power amplifier 50 Watt MOSFET amplifier
Contextual Info: Preliminary SLD2000 Product Description The SLD2000 is a 10 Watt, high performance LDMOS transistor die, designed for operation to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used as a

pmi dac08

Abstract: DAC08
Contextual Info: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor