TRANSISTOR 9BB Search Results

TRANSISTOR 9BB Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR 9BB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4PC30S O-247AC O-247AC	PDF
Super-247 Package Abstract: IRG4PSC71UD Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	1682A IRG4PSC71UD Super-247 O-247 Super-247 Package IRG4PSC71UD	PDF
IRG4PC40S Contextual Info: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4PC40S O-247AC O-247AC IRG4PC40S	PDF
Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	1682A IRG4PSC71UD Super-247 O-247	PDF
IRG4IBC30W Contextual Info: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve	Original	IRG4IBC30W O-220 IRG4IBC30W	PDF
diode lt 247 Abstract: IRG4PSC71UD TB diode 1084 GE Contextual Info: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	IRG4PSC71UD Super-247 O-247 diode lt 247 IRG4PSC71UD TB diode 1084 GE	PDF
Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve	OCR Scan	IRG4BC30W 0D2flb53	PDF
Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4BC30S O-22QAB S54S2	PDF
IGBT collector voltage 5kV Abstract: IRG4IBC30W Contextual Info: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve	Original	IRG4IBC30W O-220 IGBT collector voltage 5kV IRG4IBC30W	PDF
Contextual Info: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4BC40S TQ-220AB	PDF
600V igbt dc to dc boost converter Abstract: 480V1 IRG4IBC20W Contextual Info: PD - 91785 PRELIMINARY IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve	Original	IRG4IBC20W O-220 600V igbt dc to dc boost converter 480V1 IRG4IBC20W	PDF
IRG4BC40W Contextual Info: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC40W IRG4BC40W	PDF
1w5301 Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial Contextual Info: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1	Original	AN-944 1w5301 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial	PDF
2N7261U Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U Contextual Info: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage	Original	1806A IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U 100Volt, 1x106 2N7261U IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U	PDF

IRG4BC20W Contextual Info: PD - 9.1652A IRG4BC20W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC20W IRG4BC20W	PDF
AN-994 Abstract: IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30W-S and10) AN-994 IRG4BC30W-S	PDF
Contextual Info: PD - 9.1581 International I R Rectifier IRG4PC50S PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized tor minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	IRG4PC50S O-247AC	PDF
ic AM 12A Abstract: AN-994 IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30W-S ic AM 12A AN-994 IRG4BC30W-S	PDF
IRG4BC20KD Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr Contextual Info: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short	OCR Scan	IRG4BC20KD T0220A8 IRG4BC20KD IGBT IRG4BC20KD IRGBC20KD2 transistor iqr	PDF
2N7261 Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261 Contextual Info: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage	Original	90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 100Volt, 1x106 2N7261 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261	PDF
IRG4PC30W Contextual Info: PD - 9.1628 IRG4PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4PC30W IRG4PC30W	PDF
Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30W-S topol22	PDF
IRG4BAC50W Contextual Info: PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for switch-mode power supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BAC50W 150kHz IRG4BAC50W	PDF
IRG4BC30W Abstract: AN-994 IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	IRG4BC30W-S IRG4BC30W AN-994 IRG4BC30W-S	PDF

TRANSISTOR 9BB Search Results

TRANSISTOR 9BB Result Highlights (5)

TRANSISTOR 9BB Datasheets Context Search

Super-247 Package

IRG4PC40S

IRG4IBC30W

diode lt 247

IGBT collector voltage 5kV

600V igbt dc to dc boost converter

IRG4BC40W

1w5301

2N7261U

IRG4BC20W

AN-994

ic AM 12A

IRG4BC20KD

2N7261

IRG4PC30W

IRG4BAC50W

IRG4BC30W