TRANSISTOR 9BB Search Results

TRANSISTOR 9BB Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

TRANSISTOR 9BB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	irg4pc30s o-247ac	PDF
Super-247 Package Abstract: IRG4PSC71UD Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	1682a irg4psc71ud super-247 o-247 +1super-247 package	PDF
IRG4PC40S Contextual Info: International I R Rectifier PD - 9.1465A IRG4PC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	irg4pc40s o-247ac	PDF
Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	1682a irg4psc71ud super-247 o-247	PDF
IRG4IBC30W Contextual Info: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve	Original	irg4ibc30w o-220	PDF
diode lt 247 Abstract: IRG4PSC71UD TB diode 1084 GE Contextual Info: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than	Original	irg4psc71ud super-247 o-247 diode lt 247 +2tb diode 1084 ge	PDF
Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve	OCR Scan	irg4bc30w 0d2flb53	PDF
Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	irg4bc30s o-22qab s54s2	PDF
IGBT collector voltage 5kV Abstract: IRG4IBC30W Contextual Info: PD - 91791 PRELIMINARY IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve	Original	irg4ibc30w o-220 igbt collector voltage 5kv	PDF
Contextual Info: International IG R Rectifier PD - 9.1455A IRG4BC40S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	irg4bc40s tq-220ab	PDF
600V igbt dc to dc boost converter Abstract: 480V1 IRG4IBC20W Contextual Info: PD - 91785 PRELIMINARY IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve	Original	irg4ibc20w o-220 600v igbt dc to dc boost converter 480v1	PDF
IRG4BC40W Contextual Info: PD - 9.1654 IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bc40w	PDF
1w5301 Abstract: 1n414b AN-944 1W530 high voltage gate drive transformer IC not gate data sheet DS0026 IRF130 AN944 transistor bipolar superficial Contextual Info: Application Note AN-944 Use Gate Charge to Design the Gate Drive Circuit for Power MOSFETs and IGBTs Table of Contents Page 1. Input behavior of a MOS-gated transistor . 1 2. Test Circuit. 1	Original	an-944 1w5301 1n414b 1w530 +6high voltage gate drive transformer ic not gate data sheet ds0026 irf130 an944 transistor bipolar superficial	PDF
2N7261U Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U Contextual Info: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage	Original	1806a irhe7130 irhe8130 jansr2n7261u +5jansh2n7261u 100volt 1x106 2n7261u 2n7261 equivalent	PDF

IRG4BC20W Contextual Info: PD - 9.1652A IRG4BC20W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bc20w	PDF
AN-994 Abstract: IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bc30w-s and10 an-994	PDF
Contextual Info: PD - 9.1581 International I R Rectifier IRG4PC50S PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized tor minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter	OCR Scan	irg4pc50s o-247ac	PDF
ic AM 12A Abstract: AN-994 IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bc30w-s ic am 12a an-994	PDF
IRG4BC20KD Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr Contextual Info: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short	OCR Scan	irg4bc20kd t0220a8 igbt irg4bc20kd irgbc20kd2 +1transistor iqr	PDF
2N7261 Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261 Contextual Info: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage	Original	90653b irhf7130 irhf8130 jansr2n7261 +6jansh2n7261 100volt 1x106 2n7261 2n7261 equivalent reverse bias diode characterstics	PDF
IRG4PC30W Contextual Info: PD - 9.1628 IRG4PC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4pc30w	PDF
Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bc30w-s topol22	PDF
IRG4BAC50W Contextual Info: PD -93769 PROVISIONAL IRG4BAC50W INSULATED GATE BIPOLAR TRANSISTOR C Features • Designed expressly for switch-mode power supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bac50w 150khz	PDF
IRG4BC30W Abstract: AN-994 IRG4BC30W-S Contextual Info: PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies	Original	irg4bc30w-s irg4bc30w an-994	PDF

TRANSISTOR 9BB Search Results

TRANSISTOR 9BB Result Highlights (5)

TRANSISTOR 9BB Datasheets Context Search

Super-247 Package

IRG4PC40S

IRG4IBC30W

diode lt 247

IGBT collector voltage 5kV

600V igbt dc to dc boost converter

IRG4BC40W

1w5301

2N7261U

IRG4BC20W

AN-994

ic AM 12A

IRG4BC20KD

2N7261

IRG4PC30W

IRG4BAC50W

IRG4BC30W