TRANSISTOR 86 PHILIPS Search Results

BUK445-600B

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

Philips transistor k1

Abstract: BUK445-600B
Contextual Info: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

lc 945 p transistor NPN TO 92

Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
Contextual Info: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.

Contextual Info: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.

BLU51

Contextual Info: N AMER PHILIPS/DISCRETE OLE D 86 D 0 1 1 2 4 ^53^31 0Q133b2 □ D 7- - 3 3 - BLU 51 A V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed fo r use in m ilitary and professional wideband applications in the 30 to 400 MHz range.

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

PHB42N03T

Abstract: T404
Contextual Info: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

Philips 4312 020

Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
Contextual Info: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network

BLV21

Abstract: RF POWER TRANSISTOR NPN vhf
Contextual Info: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran­

current fed push pull topology

Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
Contextual Info: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors

639 TRANSISTOR PNP

Abstract: BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ54T PHILIPS INTERNATIONAL D E S C R IP T IO N P N P transistor in a plastic S O T 3 7 package. It is primarily intended for use in M A TV and m icrowave amplifiers such a s in aerial amplifiers, radar

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Contextual Info: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management

BUK7528-30

Abstract: PHP45N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK7528-30

Abstract: PHP42N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance

BUK7528-30

Abstract: PHB42N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device

BUK7528-30

Abstract: PHB45N03T
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device

BLX91A

Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Contextual Info: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

multi-emitter transistor

Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
Contextual Info: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.

LKE21015T

Abstract: LTE21015R
Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbS3T31 0014^43 3 ■ II ' MAINTENANCE TYPE for newdesignuse LTE21015R J LKE21015T 3 3 ~ ¿7S ' I MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

R3305 transistor

Contextual Info: N AMER PHILIPS/DISCRETE DbE D bb53T31 0014^43 3~" • A MAINTENANCE TYPE for new design use LTE21015R LKE21015T T - 3 3 -OS’ MICROW AVE LINEAR POW ER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

transistor 1BT

Abstract: transistor 1BT 86 1bt npn common base amplifier circuit designing npn 1bt 1bt transistor
Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES R02731B50W QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common base class C narrowband amplifier. • Suitable for short and medium

Contextual Info: Philips Semiconductors Objective specification NPN silicon planar epitaxial microwave power transistor FEATURES • Suitable for short and medium pulse application up to 100 us pulse width, 10% duty factor • Diffused emitter ballasting resistors improve ruggedness

BY206

Abstract: transistor t07 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003
Contextual Info: b b s a 'm □ □ s ci 3 0 ô 070 • N AMER PHILIPS/DISCRETE L IE apx BLW32 D U.H.F. LINEAR PO W ER TRANSÌSTOR N-P-N silicon planar epitaxial transistor primarily intended fo r use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties fo r class-A operation