TRANSISTOR 81 110 W 65 Search Results

QE R 643

Contextual Info: M an A M P com pany Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MA4T243 Series V3.00 Case Styles Features • • • • • Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip

transistor j39

Abstract: J31 transistor
Contextual Info: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

transistor c s z 44 v

Abstract: OC36 transistor 27F272 PH2729-110M
Contextual Info: M a n A M P ic o m p a n y Radar Pulsed Power Transistor, 110W, 100ns Pulse, 10% Duty 2.7-2.9 GHz PH2729-110M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d C lass C O p e ra tio n

Triac/TRIAC TAG 92

Abstract: TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90
Contextual Info: SIMM Series Input Modules * 6.2 mm wide and 65 mm deep * DIN Rail mounted * LED input status indicator * Bridges enable quick linking of common voltage * Identification zone on front face * IP20 Part numbers 84145061 84145062 84145064 84145066 84145071 24Vac/dc

NE24318

Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by

Ex-92

Abstract: vegaswing 83 vegator Burgess Ex VIB41 VIB51 VIB52X PTB Ex-92.C.2141 VIB52 0/PTB Ex-92.C.2141
Contextual Info: Level and Pressure Product Information Vibrating level switches Contents Contents 1 Product description 1.1 1.2 2 Function and application 2.1 2.2 3 Vibrating level switches overview . 7

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

philips ferroxcube 4c6

Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
Contextual Info: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER

sot446

Abstract: LWE2010S SC15 SOT446A
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LWE2010S NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor

MB4213

Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Contextual Info: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

NE243187

Abstract: NE243188
Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The

transistor K 1413

Abstract: 5607 transistor E243287 chip die npn transistor NE243287
Contextual Info: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH O SCILLATO R POW ER O UTPUT: The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by NEC's gold, platinum and titanium metallization system. The

GP 836 DIODE

Abstract: PH0810-4 ATC 1084 ic atc 1084 Transistor 933 atc 17-18 ATC 1084 020 diode 1776 B diode gp 421 TRANSISTOR D 1765
Contextual Info: VM &CO M m an A M P com pany Wireless Bipolar Power Transistor, 4W 850 - 960 MHz PH0810-4 Features • • • • • • • .725 _ 18.42 NPN Silicon Microwave Pow er T ran sistor D esigned for Linear Am plifier A pplications C lass AB: -30dBc Typ 3rd IMD at 4 Watts PEP

yig tuned oscillator

Abstract: transistor 81 110 w 63 yto oscillator om02-06
Contextual Info: an A M P com pany YIG Tuned Oscillators 2 - 20 GHz MLYO 0000 Series V3.00 Features • • • • • Multioctave Tuning Ranges Miniature and Cube Packages High Linearity High Stability Low Phase Noise Description The YIG Tuned Oscillator YTO is a type of tuned oscil­

transistor 81 110 w 63

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •

HP8542

Abstract: HP11590B transistor nf5 F581
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz

AT-60535

Contextual Info: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

transistor SMD DK rc

Abstract: transistor SMD DK RF NPN POWER TRANSISTOR C 10-12 GHZ RF NPN POWER TRANSISTOR 2.5 GHZ BLS2731-110 SOT423 ic smd 342
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 PINNING - SOT423A FEATURES • Suitable for short and medium pulse applications

IDG-500

Abstract: BLF244 idg 500 NCO8701 NCO8702
Contextual Info: APPLICATION NOTE Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 NCO8702 Philips Semiconductors Performance of 30 W push-pull amplifier for freq. range 25 − 110 MHz with 2 MOS transistors BLF244 CONTENTS

2272 t4

Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz

ST l 9143

Abstract: l 9143
Contextual Info: m an A M P com pany Radar Pulsed Power Transistor, 110W, 150ns Pulse, 10% Duty 1.2-1.4 GHz PH1214-110M V2.00 Features • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is t o r • C o m m o n B a s e C o n fig u r a t io n • B r o a d b a n d C la s s C O p e r a tio n

Contextual Info: an A M P com pany TO-8 Packaged Voltage Controlled Oscillators 300 MHz - 1 0 GHz MLO 60000 Series V3.00 Features • • • • • PCB Compatible Low Cost Mil and Commercial Designs Broad Frequency Ranges Low Phase Noise Description M/A-COM’s range of TO-8 voltage controlled oscillators