F581 Search Results

HP8542

Abstract: HP11590B transistor nf5 F581
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

LG 631 IC

Abstract: SDXC pin diagram of tle 7203 F804 F808 HSP50216 HSP50216KI tle 8209 e SD2C tle 8209
Contextual Info: HSP50216 TM Data Sheet tle P5 6 jec rnn ra abl ital n ver tho w rsi por n, ico cto Four-Channel Programmable Digital DownConverter The HSP50216 Quad Programmable Digital DownConverter QPDC) is designed for high dynamic range applications such as cellular basestations where multiple channel processing is

F483

Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

Contextual Info: HSP50216 Data Sheet August 17, 2007 Four-Channel Programmable Digital Downconverter FN4557.6 Features • Up to 70MSPS Input The HSP50216 Quad Programmable Digital Downconverter QPDC is designed for high dynamic range applications such as cellular basestations where multiple channel

w046

Abstract: w058 w078 65801 alba F591 W095 W069 A14352J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

HFBR-2416 receiver application notes

Abstract: vqe 14 e led display
Contextual Info: Ifa 1 PACKARD APPLICATION BULLETIN 78 I_ow-Cost Fiber-Optic Links for D mgital Applications up to 150 MBd I THE HFBR-2406/16 HIGH-PERFORMANCE COMPONENT The HFBR-2406 and HFBR-2416 are high-speed, low-cost linear light-to-voltage converters w ith typical bandwidths of

Contextual Info: 123456789ABCD9EFFBB989 BB9 12 1 F78"5 B7512 1 $ B7,56758E58 CA<75;E65

ME 4946

Contextual Info: ISL5216 TM Data Sheet February 2002 Four-Channel Programmable Digital DownConverter FN6013.1 Features • Up to 95MSPS Input The ISL5216 Quad Programmable Digital DownConverter QPDC is designed for high dynamic range applications such as cellular basestations where multiple channel

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

structure interpolation CIC Filter

Abstract: SDXC F804 HSP50216 HSP50216KI HSP50216KIZ SD2C 00A140
Contextual Info: HSP50216 TM Data Sheet July 31, 2006 Four-Channel Programmable Digital DownConverter Features • Up to 70MSPS Input The HSP50216 Quad Programmable Digital DownConverter QPDC is designed for high dynamic range applications such as cellular basestations where multiple channel

D65806

Abstract: 9215K1
Contextual Info: tFEB i 7 1993 CMOS-8 5 VOLT, 0 .65-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary January 1993 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are ultra-high performance, sub-m icron gate arrays, targe te d fo r a pp lications

900 mhz oscillator using bfr91 transistor

Abstract: Mrf648 uhf amplifier design BFR90 Motorola transistors MRF646 Motorola transistors MRF648 Motorola transistors MRF630 case 317-01 MRF2369 MRF586 motorola mrf237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

nec 2561 equivalent

Abstract: f bj04 TBA 931 765 floppy disk controller 78K3 L435 f305 F423 nec 2401 bg05
Contextual Info: CB-C7, 5-VOLT 0.8-MICRON CELL-BASED CMOS ASIC NEC Electronics Inc. August 1993 Description CB-C7 cell-based product family is a 0.8-micron drawn process with two- or three-layer metalization and is offered in 22 I/O pad ring step sizes. It is ideal for applications such

K559

Contextual Info: 123456789ABCD9EFFBB989 BB9 12 1 F78"5 B7512 1 $ B7,56758E58 CA<75;E65

MLF473F.5

Abstract: SP-7-405-1-.5 LM136-2.5
Contextual Info: 123456789ABCD9EFFBB9179 BB9 12 / 54E6-1 F78"5 B7512 856751234;5$6E FA5C75E<54E6-1 8575E<5EEF6,8AC75BCDB57<<CFC7F,58E65 / 54E6-1

Contextual Info: 123456789ABCD9EFFBB989 BB9 12 / F78"5 B7512 / $ B7,56758E58 CA875;E65

Contextual Info: 123456789ABCD9EFFBB9179 BB9 12 1 54E6/1 F78"5 B7512 856751234:5$6E FA5C75E;54E6/1 8575E;5EEF6,8AC75BCDB57;CFC7F,58E65 1 54E6/1

Digital IC CMOS 16x1 mux

Abstract: PART NUMBERING NEC IC DECODER ic tba 810 f34 function generator 80c42 F981 IC NEC VOLTAGE COMPARATOR IC LIST 3volt inverter 765 floppy disk controller 16x1 mux
Contextual Info: b42?525 00437T3 TTT « N E C E |^ | 1^1 t w C B-C7, 3-VO LT 0.8-M IC R O N c e l l - b a s e d c m o s a s ic NEC Electronics Inc. C Preliminary Description The CB-C7,3-volt cell-based product family is intended for low power portables and battery-operated products. A

RT4-433.9

Contextual Info: 123456789ABCD9EFFBB989 BB9 12 1 F78"5 B7512 1 $ B7,56758E58 CA<75;E65

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high