TRANSISTOR 717 Search Results

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

NEC 2581

Abstract: nec 258 2581 NEC 574 nec 2SC4954 2SC4954-T1 2SC4954-T2 26480 30460 NEC 821
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • Low Noise, High Gain in millimeters • Low Voltage Operation • Low Feedback Capacitance +0.1 0.4 –0.05

pulse 01940

Abstract: NEC IC D 553 C 5598 transistor transistor D 2581 NEC 2581 30460
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low V oltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in millimeters 2 .8 ± 0.2

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

NEC 2581

Abstract: nec 2405 2405 nec 09640
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4954 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance PACKAGE DIMENSIONS in millimeters 2 . 8 ± 0.2 Cre = 0 .3 p F T Y P .

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Contextual Info: BFX29 T - Z.7 - Z J PHILIPS INTERNATIONAL SbE D • 711005b 0GM2EGb 5Ô7 ■ P H I N SILICON PLANAR EPITAXIAL TRANSISTOR £ PNP transistor in a TO-39 metal envelope for general industrial applications. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: Extract from the online catalog MCR-SWS-U Order No.: 2766465 MCR threshold value switches, with adjustable hysteresis and relay/ transistor output, input signal 0.10 V Commercial data

transistor Electronic ballast 13005

Abstract: TD13005 transistor E 13005 SMD 13005 transistor transistor d 13005 13005 ballast 13005 TO-252 transistor 13005 CIRCUIT BR 13005 transistor 13005
Contextual Info: T e m ic TD13004 • TD13005 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • Very low dynamic saturation • Glass passivation • Very low operating temperature • Very short switching times

BFG505W

Abstract: MLC040
Contextual Info: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures

Contextual Info: General Description Features The MIC58P01 parallel-input latched driver is a high-voltage 80V , high-current (500mA) integrated circuit comprised of eight CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the

Contextual Info: Ordering number:ENN6465 NPN Triple Diffused Planar Silicon Transistor 2SC5637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

TA-2593

Contextual Info: Ordering number:ENN6466 NPN Triple Diffused Planar Silicon Transistor 2SC5638 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).

FMMT717

Abstract: FMMT717QTA transistor marking 72m MARKING CODE 717
Contextual Info: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON POWER SWITCHING TRANSISTOR IN SOT23 PACKAGE Features Mechanical Data • • • • • • • • • • • • • • • • 625mW Power dissipation -2.5A Continuous collector current

MARKING SMD PNP TRANSISTOR 2a

Abstract: MARKING SMD PNP TRANSISTOR SMD BR 12 FCX717 SMD 8A TRANSISTOR
Contextual Info: Transistors SMD Type PNP Silicon Power Switching Transistor FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE sat 77mÙ at 3A.

marking code 718 sot363

Contextual Info: SIEMENS BCR 185S PNP Silicon Digital Transistor Array >Switching Circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package »Built in biase resistor (R ^IO kß, R2=47kfl) Type BCR 185S Marking Ordering Code Pin Configuration

ta 7769

Abstract: nec 13A 2SK1492 MEI-1202 TEA-1035
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET ,y N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1492 NEC SWITCHING N-CHANNEL POWER MOS FET

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

EMG 22-REL/KSR-G 24/TRN12

Abstract: relay cross reference transistor cross reference
Contextual Info: Extract from the online catalog EMG 22-REL/KSR-G 24/TRN12 Order No.: 2952363 The illustration shows version EMG 22,5 REL, with integrated n-p-n transistor control Relay module, with miniature switching relay, with integrated NPN

TLP582

Contextual Info: GaAßAs IRED & PHOTO-IC TLP582 TENTATIVE DATA nos FET Unit in mm GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaA£As light emitting 18.9+0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that

switching transistor msd

Abstract: Mil-R-39016/11 tyco mil relay
Contextual Info: MS MSD MSDD MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MS MSD MSDD MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE

NE38018 V68

Abstract: transistor NEC D 587 NE38018 NE38018-T1 NE38018-T2 VP15-00-3 37792
Contextual Info: PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm V67 , OIP3 = 23 dBm (V68) typ. at f = 2 GHz

all ic data

Abstract: IC data book free download data sheet capacitor 22uF F-103 Z capacitor TK717xx TOKO ldo peak hold ic data sheet GRM36B104K10
Contextual Info: IC DATA SHEET LDO REGULATOR WITH ON/OFF SWITCH TK717xx MEETING YOUR NEEDS TOKO TOKO Inc. IC Data Sheet TK717xx TK717xx Features ・Built-in shunt circuit of output to GND. Charged energy of output capacitor is discharged quickly. ・Built-in PNP power transistor. Very small Dropout Voltage