TRANSISTOR 5S V Search Results

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

RF NPN POWER TRANSISTOR 3 GHZ 5w

Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: tJ zSsmi-Conauatoi ZPioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5096 HIGH VOLTAGE PNP TRANSISTOR 1 5s- 11 SEATINQ PLJWE FEATURES • LOW SATURATION VOLTAGE • LOW LEAKAGE AT HIGH TEMPERATURE

PH1819-10

Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
Contextual Info: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP

Contextual Info: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)

AC27

Contextual Info: 551 2SC o VHF O ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR Æ f X teffl ffl o o 5s V D y N P N X t : 5 > * i / ? l ; 7 l s - t B h ÿ y 5J Z S > fè VHp Power Ampi ¡ fi er Appi i cat ion s Frequency Multipl ier Appi ¡cations • c l 175UHZ -C P 0 = 13.5W Min. )

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-

Contextual Info: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR

Contextual Info: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 5W, 2 j.s Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-5S 7JJ Features H i, • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is to r • C o m m o n Base C o n fig u r a tio n • B ro a d b a n d C lass C O p e r a t io n

MPA2987

Abstract: UPA2987GS PA2987 IEP-733 LT 7706 uPA2987 IEB-616
Contextual Info: 5s—S7 • S/— h Compound Transistor uPA2987 > j 3 y h =7> x î > * 9 t LED, 7 ^ 7 “, « jU -K ^ ^ T S ¿¿PA2987ii, PNP, N P N V y y ' J X ÿ t m m m t j i t ^ ^ ô , ffl* V - X 7 @ ^ * * ¿ 0 ? '- <J > F > h ÿ > i^X ¿ T V A T t o T T L ^ M O S L S I i O i t ì Ì / f f ^ ^ ^ - b - t ì r T , ^ - x m ì O L & f f l t & t èÌ&$L&, £

pml 003 am

Abstract: transistor c s x 13001 transistor te 13001 ic pml 003 am R0815 SP 13001 AUIR0815 SP 13001 transistor PAR/AEC-Q100
Contextual Info: AUIR R0815 5S AUTOMOT A TIVE GRA ADE Octo ober 26, 20 011 BUFFER GATE G D DRIVER R IC Feattures • High peak output currentt > 10A ation delay tiime • Low propaga an be applied d to VEE using g an external • Negative turrn off bias ca

electro optical sensor sensor

Abstract: reflector sensor short distance detection KUA0047B reflective photo sensor ED-4701
Contextual Info: KUA0047B Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 20 x 9.4 x 13.9 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Supply Voltage (Vcc) = 3V is available.) ・Integrated IRED and Photo IC

2SC1172 TOSHIBA

Abstract: A8A Transistor TRANSISTOR T-03 2sc1172 Toshiba 2SC1172 AC42C BA RV
Contextual Info: 2 s c 1172 SILICON NPN T R IP L E D IFFU SE D MESA TRANSISTOR II t \yií*f filetti tlfñ O Unit in mm o Color TV Horizontal Output Applications • M Œ T t ; i f 02SOMÄX. <¡>2lÆMAxI t S V0B0= 1500V v 0E sat = 5V (Max.) : +a o9 xo -a o 3 (Ic = 4A, Ib =Q8A)

Contextual Info: INFRARED LED + PHOTO TRANSISTOR • * . l- \ M \ - TLP1230 C4 /(C5) (T L P 1 2 3 0 (C 4 ) COPIER, LASER BEAM PRINTER, LED PRINTER U nit in mm TLP1230 (C4) FACSIMILE, PRINTER, ELECTRONIC TYPEWRITER 4 - R ( 0.5 ) AUTOMATIC VENDING MACHINE, TERMINAL

schmitt trigger IC

Abstract: isocom
Contextual Info: ISH4 TRANSISTOR OPTOCOUPLERS ISOCOM PACKAGES LTD CIRCUIT SIDE VIEW 2 TOP VIEW 26.0mm TOP VIEW Anode 1 Emitter 4 Cathode 2 Collector 3 7.8 mm 6.5 26.0 mm 20.5mm DESCRIPTION The ISH 4 is an optically coupled isolator, consisting of an infrared emitting diode with a minim separation of

schmitt trigger IC

Abstract: transistor Power output 100mW
Contextual Info: ISH4 TRANSISTOR OPTOCOUPLERS PACKAGES CIRCUIT SIDE VIEW 2 TOP VIEW 26.0mm TOP VIEW Anode 1 Emitter 4 Cathode 2 Collector 3 7.8 mm 6.5 26.0 mm 20.5mm DESCRIPTION The ISH 4 is an optically coupled isolator, consisting of an infrared emitting diode with a minim separation of

MPSU07

Contextual Info: TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IMPS - U57 AMPLIFIER TRANSISTOR PNP SILICON ANNULAR AMPLIFIER TRANSISTOR PNP SILICON . . . designed for general-purpose, high-voltage amplifier and driver

smd 5s transistor

Abstract: Pertinax
Contextual Info: Vishay Telefunken Assembly Instructions Surface Mounted Devices General Semiconductor devices can be mounted in any position. The terminal length may be bent at a distance greater than 1.5 mm from the case provided no mechanical force has an effect on the case.

11kv

Abstract: 5V 50mA optically coupled isolator
Contextual Info: ISH5 DARLINGTON TRANSISTOR OPTOCOUPLERS PACKAGES CIRCUIT SIDE VIEW 2 TOP VIEW 26.0 mm TOP VIEW Anode 1 Emitter 4 Cathode 2 Collector 3 7.8 mm 6.5 26.0 mm 20.5mm DESCRIPTION The ISH 5 is an optically coupled isolator, consisting of an infrared emitting diode with a minim separation of

ISOCOM

Contextual Info: ISH6 TRANSISTOR OPTOCOUPLERS ISOCOM PACKAGES LTD CIRCUIT TOP2VIEW SIDE2 VIEW 12.2 mm 6.3 mm TOP2VIEW Anode 1 Emitter 4 Cathode 2 Collector 3 12.2 mm 7.68 mm DESCRIPTION The ISH 6 is an optically coupled isolator, consisting of an gallium arsenide infrared emitting diode with a

optocouplers 600MA

Abstract: ISOCOM
Contextual Info: ISH6 TRANSISTOR OPTOCOUPLERS PACKAGES CIRCUIT TOP2VIEW SIDE2 VIEW 12.2 mm 6.3 mm TOP2VIEW Anode 1 Emitter 4 Cathode 2 Collector 3 12.2 mm 7.68 mm DESCRIPTION The ISH 6 is an optically coupled isolator, consisting of an gallium arsenide infrared emitting diode with a

ISOCOM

Contextual Info: ISH5 DARLINGTON TRANSISTOR OPTOCOUPLERS ISOCOM PACKAGES LTD CIRCUIT SIDE VIEW 2 TOP VIEW 26.0 mm TOP VIEW Anode 1 Emitter 4 Cathode 2 Collector 3 7.8 mm 6.5 26.0 mm 20.5mm DESCRIPTION The ISH 5 is an optically coupled isolator, consisting of an infrared emitting diode with a minim separation of

Contextual Info: INFRARED LED + PHOTO TRANSISTOR TLP811 TLP811 OPTICAL SHAFT POSITION AND VELOCITY MONITOR USING A DIGITALLY ENCODED DISC MOUNTED ON A SHAFT. OPTICAL SENSING OF MARKS ON PAPER, PAPER TAPE OR IBM CARD. END OF TAPE SENSOR USING A TRANSPARENT SECTION OF TAPE, A HOLE IN THE TAPE.