TRANSISTOR 5S V Search Results

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

RF NPN POWER TRANSISTOR 3 GHZ 5w

Contextual Info: Æ an A M P com t pan y Radar Pulsed Power Transistor, 5W, 2|is Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V 2 .0 0 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: tJ zSsmi-Conauatoi ZPioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5096 HIGH VOLTAGE PNP TRANSISTOR 1 5s- 11 SEATINQ PLJWE FEATURES • LOW SATURATION VOLTAGE • LOW LEAKAGE AT HIGH TEMPERATURE

PH1819-10

Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
Contextual Info: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP

Contextual Info: DTC144TU/DTC144TK/DTC144TS/DTC144TF DTC144TL/DTC144TA/ DTC144TV /T ra n sisto rs D TC 144T U /D TC 144T K /D T C 144TS D TC 144T F/D TC 144TL/D TC 144TA DTC144T V 5s $h t-7 > 7- 9 mtnftM h > v * 9 7 ^/Transistor Switch Digital Transistors Includes Resistors)

PH3135-5S

Contextual Info: PH3135-5S Radar Pulsed Power Transistor 5W, 3.1-3.5 GHz, 2µs Pulse, 10% Duty M/A-COM Products Released, 10 Aug 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

2N2222ACSM

Contextual Info: bOE P - • Ô3.33107 D Ü 0 0 5S b DbO ■ SMLB 'T 'S S 'W SEMELAB PLC SEMELAB 2N2222ACSM HIGH SPEED, MEDIUM POWER, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA D im ension s in m m

MTSS8040

Abstract: 093L
Contextual Info: MARKTECH INTERNATIONAL löE D SLOTTED SWITCH MTSS8040 S 7 Tlh 5S QOGGMS1 INFRARED LED+PHOTO TRANSISTOR M A APPLICATIONS u s • OPTICAL SWITCH • S H AFT PO S ITIO N A N D V EL O C ITY SEN S O R FEATURES 1. 2. 3. 4. • Both chips face each other across a 0.118 inch air gap.

AC27

Contextual Info: 551 2SC o VHF O ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR Æ f X teffl ffl o o 5s V D y N P N X t : 5 > * i / ? l ; 7 l s - t B h ÿ y 5J Z S > fè VHp Power Ampi ¡ fi er Appi i cat ion s Frequency Multipl ier Appi ¡cations • c l 175UHZ -C P 0 = 13.5W Min. )

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-

Contextual Info: 1989963 CENTRAL SEM C O N D U C T O R _ 6 1 C 0 0 2 3 0 - r - 2 9 ' 3 1 ti graf&Gsfl gSfiîB6e©Bi^5SÊ@P @@51-3. de I n t m b B • 00DDE3D b GES6014 GES6016 C@BS€?CSl g©DlliS@HÖö£tOP Corp. Central sem iconductor Corp. NPN SILICON TRANSISTOR

Contextual Info: H E W L E T T - P A C K A R D / CI1PNTS m blE J> • 444 7 5S 4 O O Q ' P f H flS4 ■ H P A AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor HEW LETT PACKARD Features TO-72 Package • 24.0 dBm typical Pi <mat 1.0 GHz • 5.5 dB typical Gi dB at 1.0 GHz

Contextual Info: w an A M P com pany Radar Pulsed Power Transistor, 5W, 2 j.s Pulse, 10% Duty 3 .1 -3 .5 GHz PH3135-5S 7JJ Features H i, • N P N S ilic o n M ic r o w a v e P o w e r T r a n s is to r • C o m m o n Base C o n fig u r a tio n • B ro a d b a n d C lass C O p e r a t io n

MPA2987

Abstract: UPA2987GS PA2987 IEP-733 LT 7706 uPA2987 IEB-616
Contextual Info: 5s—S7 • S/— h Compound Transistor uPA2987 > j 3 y h =7> x î > * 9 t LED, 7 ^ 7 “, « jU -K ^ ^ T S ¿¿PA2987ii, PNP, N P N V y y ' J X ÿ t m m m t j i t ^ ^ ô , ffl* V - X 7 @ ^ * * ¿ 0 ? '- <J > F > h ÿ > i^X ¿ T V A T t o T T L ^ M O S L S I i O i t ì Ì / f f ^ ^ ^ - b - t ì r T , ^ - x m ì O L & f f l t & t èÌ&$L&, £

electro optical sensor sensor

Abstract: reflector sensor short distance detection KUA0047B reflective photo sensor ED-4701
Contextual Info: KUA0047B Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 20 x 9.4 x 13.9 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Supply Voltage (Vcc) = 3V is available.) ・Integrated IRED and Photo IC

reflector sensor

Abstract: KUA0047B electro optical sensor sensor ED-4701
Contextual Info: KUA0047B Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 20 x 9.4 x 13.9 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Please contact our sales staff concerning Vcc=3V product) ・Integrated IRED and Photo IC

ED-4701

Contextual Info: KUA0047B Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 20 x 9.4 x 13.9 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Supply Voltage (Vcc) = 3V is available.) ・Integrated IRED and Photo IC

2SC1172 TOSHIBA

Abstract: A8A Transistor TRANSISTOR T-03 2sc1172 Toshiba 2SC1172 AC42C BA RV
Contextual Info: 2 s c 1172 SILICON NPN T R IP L E D IFFU SE D MESA TRANSISTOR II t \yií*f filetti tlfñ O Unit in mm o Color TV Horizontal Output Applications • M Œ T t ; i f 02SOMÄX. <¡>2lÆMAxI t S V0B0= 1500V v 0E sat = 5V (Max.) : +a o9 xo -a o 3 (Ic = 4A, Ib =Q8A)

KUA0055A

Abstract: ED-4701 EIAJ
Contextual Info: KUA0055A Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 23.7 x 9.3 x 11.4 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Supply Voltage (Vcc) = 3V is available.) ・Integrated IRED and Photo IC

Contextual Info: KUA0047B Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 20 x 9.4 x 13.9 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Supply Voltage (Vcc) = 3V is available.) ・Integrated IRED and Photo IC

reflector sensor

Contextual Info: KUA0055A Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 23.7 x 9.3 x 11.4 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Please contact our sales staff concerning Vcc=3V product)

Contextual Info: INFRARED LED + PHOTO TRANSISTOR • * . l- \ M \ - TLP1230 C4 /(C5) (T L P 1 2 3 0 (C 4 ) COPIER, LASER BEAM PRINTER, LED PRINTER U nit in mm TLP1230 (C4) FACSIMILE, PRINTER, ELECTRONIC TYPEWRITER 4 - R ( 0.5 ) AUTOMATIC VENDING MACHINE, TERMINAL

reflector sensor

Contextual Info: KUA0055A Reflector Sensor Features Function Product features Reflector Sensor for Short Distance Digital Output ・ Outer Dimension : 23.7 x 9.3 x 11.4 mm (L x W x H) ・Supply Voltage (Vcc) = 5V (Supply Voltage (Vcc) = 3V is available.) ・Integrated IRED and Photo IC

KTA1517S

Abstract: KTC3911S UA08
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3911S EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCeo=120V. • Excellent hFF Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). • High hFE : hFF=200~700. • Low Noise : NF=ldB(Typ.), 10dB(Max.).