PH1819-10
Abstract: Bv 42 transistor j73 diode TRANSISTOR BV 32 PH1819
Contextual Info: ,z= i-s = -A= =c an AMP company * = .-= - = - Wireless Bipolar Power Transistor, 1OW 1.78 - 1.90 GHz l l l l v2.00 ,744 :lE.SZ Features l PH1819-10 5s: .,4 22 +-, / Designed for Cellular Base Station Applications -30 dBc Typ 3rd IMD at 10 Watts PEP
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ph1819-10fld850bv 42 transistorj73 diode+2transistor bv 32ph1819
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13MM
Abstract: PH1819-4N v6 4n diode
Contextual Info: an AMP comoanv Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz 4W PH1819-4N v2.00 Features ,975 .‘24 77, NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 4 Watts PEP Class A: +44 dBm Typ 3rd Order Intercept Point
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ph1819-4nrl850300ma13mm+1v6 4n diode
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