TRANSISTOR 5B1 Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IPD320N20N3

Abstract: marking EB5
Contextual Info: IPD320N20N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +* Y" I9 +, 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5

IPD600N25N3 G

Contextual Info: IPD600N25N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *-( J R 9H"[Z#$YMd .( Y" I9 *- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5

IPB027N10N3

Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
Contextual Info: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

4b 5c marking

Contextual Info: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q  T ? @5B1D9>7 D5=@5B1D EB5

Contextual Info: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5 Q฀)2 6B55฀<514฀@<1D9>7฀+?",฀3?=@<91>D

CCD MARKING

Contextual Info: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    

marking 9D

Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
Contextual Info: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

marking EB5

Abstract: diode marking eb5 marking G9
Contextual Info: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

IPB065N15N3

Abstract: 5F040 ED 05 Diode marking EB5
Contextual Info: IPB065N15N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R  , ? >=1H-(     .&- Y" I9 )+( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

Q451

Abstract: 95B9 C19B marking EB5 d91d package marking 5f
Contextual Info: IPD180N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H ( J R  , ? >=1H-(    )0 Y" I ,+ 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D

Contextual Info: BSC360N15NS3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀  ฀T฀?@5B1D9>7฀D5=@5B1DEB5

BC807-40

Abstract: 5B1 SOT-23 BC807-16 BC807-25
Contextual Info: BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings TA=25 C unless otherwise noted Symbol Value Collector-Emitter Voltage V CEO -45 Unit V Collector-Base Voltage VCBO

Contextual Info: IPA086N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ 0&. Y I9 ,- 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5

Contextual Info: IPD122N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )*&* Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5

jb transistor

Abstract: 2SC2356 374C
Contextual Info: h'UdlTSU niC R O ELEC T R O N IC S "37 DE | 3 7 4 ‘ì 7 t . E □□□1751 FMICROELECTRONICS U JIT S U 2SC2356 SILICON HIGH SPEED TRIPLE DIFFUSED ^ NPN POWER TRANSISTOR 10 AMP, 400 VOLT r- J3-/J 3 7 4 9 7 1>2 FUJITSU MICROELECTRONICS 37C 01751 ABSOLUTE MAXIMUM RATINGS

ceramic disc capacitor 100nf 104

Abstract: C1-C18 TT 2222 npn capacitor 100nf multilayer SOT171 transistor tt 2222 BLV97CE
Contextual Info: N AMER P H I L I P S / D I S C R E T E bTE D I Philips Semiconductors ÜET1 7 1 E 7 fl B A P X BLV97CE Data sheet status bbSBTBl Product specification UHF power transistor date of issue March 1993 FEATURES QUICK REFERENCE DATA • Internal input matching to achieve

d5cd

Abstract: IPI024N06N3 G
Contextual Info: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC   I9 .( J *& Y" )*( 6

IPB029N06N3G

Contextual Info: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R  , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC I9   .( J *&1 Y" *(

55B5

Abstract: IPB036N12N marking eb5 Diode 9H diode 1D marking G9
Contextual Info: IPB036N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4     3 ? >F5BD5BC Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H *( J R 9H"[Z#$YMd +&. Y" I9 )0( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 + 9H"[Z#

marking EB diode

Abstract: Q451 ee 19 8b qg
Contextual Info: IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R  , ? >=1H, & Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &    I9 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# 0( J -&,