TRANSISTOR 313 SMD Search Results

4P04L11

Abstract: IPD50P04P4L-11
Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4P04L11

Abstract: INFINEON marking
Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4P04L11

Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

Contextual Info: IPD5N25S3-430 OptiMOS -T Power-Transistor Product Summary V DS 250 V R DS on ,max 430 mW ID 5 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4P0413

Abstract: 2101-7R 4-P-04 IPD50P04P4-13 IPD50p04 IPD50P04P4 IPD50P04P413
Contextual Info: IPD50P04P4-13 Type OptiMOS -P2 Power-Transistor Product Summary Package V DS -40 V R DS on 12.6 mW ID -50 A Marking Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature

4-P-04

Contextual Info: IPD85P04P4L-06 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 6.4 mW ID -85 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

4N0402

Abstract: a3180 c9025 IPD90N04S4-02 TH-43
Contextual Info: IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4N0405

Contextual Info: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4N0403

Abstract: IPD90N04S4-03 65V-5 IPD90N04S4
Contextual Info: IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4N0405

Abstract: IPD90N04S4-05 smd diode 86A IPD90N04S4 F86A PG-TO252-3-313
Contextual Info: IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 86 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4N04L04

Abstract: IPD90N04S4L-04 PG-TO25 IPD90N04S4 IPD90N04S4L PG-TO252-3-313
Contextual Info: IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 3.8 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

IPD70P04P4L-08

Abstract: a1409
Contextual Info: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

IPD90P04P4-05

Abstract: 4P0405 IPD90P04P4 IPD90P04 IPD90P04P405
Contextual Info: IPD90P04P4-05 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.7 mΩ ID -90 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

IPD100N04S4-02

Abstract: 4N0402 DSS 1630 marking 206a 175C D441000 ipd100n
Contextual Info: IPD100N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 2.0 mΩ ID 100 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4P0409

Abstract: IPD70P04P4-09 IPD70P04P4
Contextual Info: IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 8.9 mΩ ID -73 A Features PG-TO252-3-313 • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

Contextual Info: IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V DS 100 V R DS on ,max 6.6 mW ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified TAB • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 3 • Green Product (RoHS compliant)

4P0407

Abstract: IPD85P04P407
Contextual Info: IPD85P04P4-07 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.3 mW ID -85 A Features • P-channel - Normal Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

IPD75N04S4-06

Abstract: 4N0406 PG-TO252-3-313 17A44 d75a 4N04 ipd75n
Contextual Info: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

IPD50N04S4L-08

Abstract: 4N04L08 IPD50N04S4-08 PG-TO252-3-313 ANPS071E 8025A
Contextual Info: IPD50N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4N0410

Abstract: IPD50N04S4-10
Contextual Info: IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 9.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

Contextual Info: IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 7.8 mW ID -70 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)

IPD50N04S4-08

Abstract: 4N0408
Contextual Info: IPD50N04S4-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 7.9 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4N0406

Abstract: 59-MID IPD75N04S4-06 PG-TO252-3-313 gs 32
Contextual Info: IPD75N04S4-06 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 5.9 mΩ ID 75 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)

4P04L04

Abstract: IPD90P04P4L04
Contextual Info: IPD90P04P4L-04 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on 4.3 mW ID -90 A Features • P-channel - Logic Level - Enhancement mode • AEC qualified PG-TO252-3-313 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)