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    IPD50 Search Results

    IPD50 Datasheets (96)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPD5012-760
    Inventus Power Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - 50 WATT DESKTOP POWER SUPPLY 12V Original PDF 425.85KB
    IPD5012-760S
    Inventus Power Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC DESKTOP ADAPTER 12V 51W Original PDF 425.85KB
    IPD5015-760
    Inventus Power AC/DC DESKTOP ADAPTER 15V 50W Original PDF 255.67KB 2
    IPD5018-760
    Inventus Power AC/DC DESKTOP ADAPTER 18V 50W Original PDF 255.67KB 2
    IPD5019-760
    Inventus Power Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - 50 WATT DESKTOP POWER SUPPLY 19V Original PDF 425.85KB
    IPD5019-760S
    Inventus Power Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC DESKTOP ADAPTER 19V 49.4W Original PDF 425.85KB
    IPD5024-760
    Inventus Power Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - 50 WATT DESKTOP POWER SUPPLY 24V Original PDF 425.85KB
    IPD5024-760S
    Inventus Power Power Supplies - External/Internal (Off-Board) - AC DC Desktop, Wall Adapters - AC/DC DESKTOP ADAPTER 24V 50.4W Original PDF 425.85KB
    IPD50N03S2-07
    Infineon Technologies Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 30.0 V; RDS (on) (max) (@10V): 7.3 mOhm; ID (max): 50.0 A; RthJC (max): 1.1 K/W; Original PDF 151.65KB 8
    IPD50N03S207ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO252-3 Original PDF 152.56KB
    IPD50N03S2L-06
    Infineon Technologies Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.4 mOhm; ID (max): 50.0 A; RthJC (max): 1.1 K/W; Original PDF 152.59KB 8
    IPD50N03S2L06ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO252-3 Original PDF 153.47KB
    IPD50N03S4L-06
    Infineon Technologies Single: N-Channel 30V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 5.5 mOhm; ID (max): 50.0 A; RthJC (max): 2.7 K/W; Original PDF 161.87KB 9
    IPD50N03S4L06ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A TO252-3 Original PDF 135.42KB
    IPD50N04S3-08
    Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 7.5 mOhm; ID (max): 50.0 A; RthJC (max): 2.2 K/W; Original PDF 185.98KB 9
    IPD50N04S308ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3 Original PDF 188.19KB
    IPD50N04S3-09
    Infineon Technologies Single: N-Channel 40V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 9.0 mOhm; ID (max): 50.0 A; RthJC (max): 2.4 K/W; Original PDF 183.74KB 9
    IPD50N04S309ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3 Original PDF 183.87KB
    IPD50N04S4-08
    Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 50A TO252-3-313 Original PDF 9
    IPD50N04S408ATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 50A TO252-3-313 Original PDF 155.75KB
    SF Impression Pixel

    IPD50 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD50R380CEAUMA1

    Trans MOSFET N-CH 500V 14.1A 3-Pin(2+Tab) DPAK T/R
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    Verical () IPD50R380CEAUMA1 617,500 653
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    IPD50R380CEAUMA1 6 4
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    Rochester Electronics IPD50R380CEAUMA1 617,500 1
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    Rutronik IPD50R380CEAUMA1 Tape & Reel 52,500 2,500
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    EBV Elektronik IPD50R380CEAUMA1 57,500 14 Weeks 2,500
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    Infineon Technologies AG IPD50R280CEAUMA1

    Trans MOSFET N-CH 550V 18.1A 3-Pin(2+Tab) DPAK T/R
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    Verical () IPD50R280CEAUMA1 6,825 3
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    IPD50R280CEAUMA1 5,000 2,500
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    IPD50R280CEAUMA1 2,500 2,500
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    IPD50R280CEAUMA1 679 444
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    Arrow Electronics () IPD50R280CEAUMA1 Cut Strips 6,825 8 Weeks 1
    • 1 $1.76
    • 10 $1.76
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    IPD50R280CEAUMA1 5,000 8 Weeks 2,500
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    IPD50R280CEAUMA1 2,500 8 Weeks 2,500
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    TME IPD50R280CEAUMA1 2,500
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    Infineon Technologies AG IPD50R500CEAUMA1

    Trans MOSFET N-CH 500V 7.6A 3-Pin(2+Tab) DPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () IPD50R500CEAUMA1 5,000 5
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    IPD50R500CEAUMA1 2,500 2,500
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    IPD50R500CEAUMA1 2,500 2,500
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    Arrow Electronics () IPD50R500CEAUMA1 Cut Strips 5,000 8 Weeks 1
    • 1 $1.13
    • 10 $1.13
    • 100 $1.13
    • 1000 $1.13
    • 10000 $1.13
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    IPD50R500CEAUMA1 2,500 8 Weeks 2,500
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    IPD50R500CEAUMA1 2,500 8 Weeks 2,500
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    IPD50R500CEAUMA1 Cut Strips 9 8 Weeks 1
    • 1 $0.33
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    TME IPD50R500CEAUMA1 1
    • 1 $1.07
    • 10 $1.07
    • 100 $1.07
    • 1000 $1.07
    • 10000 $0.82
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    Rutronik IPD50R500CEAUMA1 Tape & Reel 5,000 2,500
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    Infineon Technologies AG IPD50R399CPATMA1

    Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IPD50R399CPATMA1 5,000 2,500
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    Infineon Technologies AG IPD50R2K0CEAUMA1

    Trans MOSFET N-CH 500V 3.6A 3-Pin(2+Tab) DPAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical () IPD50R2K0CEAUMA1 2,500 2,500
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    IPD50R2K0CEAUMA1 2,500 2,500
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    IPD50R2K0CEAUMA1 781 9
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    Arrow Electronics () IPD50R2K0CEAUMA1 2,500 8 Weeks 2,500
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    IPD50R2K0CEAUMA1 2,500 8 Weeks 2,500
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    IPD50R2K0CEAUMA1 Cut Strips 781 44 Weeks 1
    • 1 $0.64
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    IPD50R2K0CEAUMA1 Cut Strips 40 8 Weeks 1
    • 1 $0.17
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    TME IPD50R2K0CEAUMA1 2,500
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    Rutronik IPD50R2K0CEAUMA1 Tape & Reel 15,000 2,500
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    IPD50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Contextual Info: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3l-08pg-to252-3-113n06l08g51 smd+3anps071egd15-03n06l PDF

    4N03L06

    Abstract: smd diode 77a IPD50N03S4L-06 PG-TO252-3-11
    Contextual Info: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mΩ ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original
    ipd50n03s4l-06pg-to252-3-114n03l06smd diode 77a PDF

    3N06L06

    Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11
    Contextual Info: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3l-06pg-to252-3-113n06l06anps071e PDF

    3N0607

    Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11
    Contextual Info: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3-07pg-to252-3-113n0607anps071e PDF

    PN06L06

    Contextual Info: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3l-06pg-to252-3-11pn06l06 PDF

    Infineon 5R399P

    Abstract: 5r399p Infineon+5R399P
    Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.399 Ω 17 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original
    ipd50r399cppg-to2525r399pinfineon 5r399p+1infineon+5r399p PDF

    g51 smd

    Abstract: D60015
    Contextual Info: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3-09pg-to252-3-11qn0609g51 smd+1d60015 PDF

    Contextual Info: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3-09pg-to252-3-11qn0609 PDF

    PN06L13

    Abstract: Application Note ANPS071E PG-TO252-3-11 Diode d29 08 ANPS071E IPD50N06S3L-13
    Contextual Info: IPD50N06S3L-13 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 13 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3l-13pg-to252-3-11pn06l13application note anps071e+2diode d29 08anps071e PDF

    4N03L06

    Abstract: IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a
    Contextual Info: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mW ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original
    ipd50n03s4l-06pg-to252-3-114n03l06j2009+1smd diode 77a PDF

    4P04L11

    Abstract: IPD50P04P4L-11
    Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mΩ ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50p04p4l-11pg-to252-3-3134p04l11-10v1+1-10v2 PDF

    PN03L06

    Abstract: IPD50N03S2L-06 marking 113a ANPS071E PG-TO252-3-11
    Contextual Info: IPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 30 V R DS on ,max 6.4 mΩ ID 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature PG-TO252-3-11


    Original
    ipd50n03s2l-06pg-to252-3-11pn03l06marking 113a+1anps071e PDF

    diode AY 101

    Abstract: IPD50R520CP
    Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V฀*EL;HI฀<?=JG;฀E<฀C;G?I฀0IH฀M฀/Y V฀3BIG7฀BEL฀=7I;฀9>7G=; V"1฀9N\_Si //* P R>M#a`$&_Si * /,*  +- `= QY&ejb V฀#MIG;C;฀:K :I฀G7I;: V฀&?=>฀F;7A฀9JGG;DI฀97F78?B?IN


    Original
    ipd50r520cp97f78799eg87bb7hi+1diode ay 101 PDF

    4P04L11

    Abstract: PG-TO252-3-313 IPD50P04P4L-11 IPD50p04 IPD50P04p4l11 IPD50P04P4L PG-TO252-3 IPD50
    Contextual Info: IPD50P04P4L-11 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on ,max 10.6 mW ID -50 A Features PG-TO252-3-313 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50p04p4l-11pg-to252-3-3134p04l11-10v1+7-10v2726-ipd50p04p4l-11ipd50p04ipd50p04p4l11ipd50p04p4lpg-to252-3ipd50 PDF

    4N0410

    Abstract: IPD50N04S4-10
    Contextual Info: IPD50N04S4-10 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max 9.3 mΩ ID 50 A Features • N-channel - Enhancement mode PG-TO252-3-313 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original
    ipd50n04s4-10pg-to252-3-3134n0410 PDF

    PN06L13

    Abstract: IPD50N06S2L-13 ANPS071E PG-TO252-3-11
    Contextual Info: IPD50N06S2L-13 OptiMOS Power-Transistor Product Summary Features V DS • N-channel Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID V 12.7 mΩ 50 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s2l-13pg-to252-3-11pn06l13anps071e PDF

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R3K0CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R3K0CE,IPU50R3K0CE 1Description DPAK


    Original
    ipx50r3k0ceipd50r3k0ceipu50r3k0ce PDF

    5r650ce

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPD50R650CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R650CE 1Description DPAK


    Original
    ipd50r650ce5r650ce PDF

    Contextual Info: IPD50R399CP CoolMOSTM Power Transistor Product Summary Features V *EL;HI<?=JG; E<C ;G?I0 - , M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * -33 " +1 `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9


    Original
    ipd50r399cp PDF

    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS CE 500VCoolMOS™CEPowerTransistor IPx50R1K4CE DataSheet Rev.2.2 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPD50R1K4CE,IPU50R1K4CE 1Description DPAK


    Original
    ipx50r1k4ceipd50r1k4ceipu50r1k4ce PDF

    D70010

    Contextual Info: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    ipd50n06s3-09pg-to252-3-11qn0609d70010 PDF

    IPD50R520CP

    Abstract: 5r520p JESD22 5R52 DIODE D38 -06
    Contextual Info: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.520 Ω 13 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original
    ipd50r520cppg-to2525r520pjesd22+25r52diode d38 -06 PDF

    JG Diode

    Abstract: diode EZD jg transistor T1027 f7 transistor MARKING 7C DIODE marking 7b PG-TO252-3 transistor 7g
    Contextual Info: NjbW IPD50R520CP CoolMOSTM Power Transistor Product Summary Package V *EL;HI<?=JG; E<C ;G?I0 IH M / Y V3 B IG 7 BEL =7I; 9 >7G=; V"1 9N\_Si //* P R>M#a`$&_Si * /,* " +- `= QY&ejb V # MIG;C ; : K : IG7I;: V & ?=> F;7A9 JGG;DI9 7F78?B ?IN V . 8 <G; B;7: FB7I?D= 0 E& 1 9


    Original
    ipd50r520cpjg diodediode ezdjg transistor+6t1027f7 transistormarking 7cdiode marking 7bpg-to252-3transistor 7g PDF

    5R520P

    Abstract: PG-TO-252-3-21 IPD50R520CP JESD22
    Contextual Info: Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Package • Lowest figure of merit RON x Qg • Ultra low gate charge VDS @Tjmax 550 V RDS on ,max 0.520 Ω 13 nC Qg,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original
    ipd50r520cppg-to2525r520ppg-to-252-3-21+1jesd22 PDF