QN0609 Search Results
QN0609 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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IPD80N06S3-09
Abstract: ANPS071E PG-TO252-3-11
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IPD80N06S3-09 PG-TO252-3-11 QN0609 IPD80N06S3-09 ANPS071E PG-TO252-3-11 | |
g51 smd
Abstract: D60015
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IPD50N06S3-09 PG-TO252-3-11 QN0609 g51 smd D60015 | |
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Contextual Info: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature |
Original |
IPD50N06S3-09 PG-TO252-3-11 QN0609 | |
D70010Contextual Info: IPD50N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 9.0 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature |
Original |
IPD50N06S3-09 PG-TO252-3-11 QN0609 D70010 | |
DIODE D38 -06Contextual Info: IPD80N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 8.4 mΩ ID 80 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature |
Original |
IPD80N06S3-09 PG-TO252-3-11 QN0609 DIODE D38 -06 | |
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Contextual Info: IPD80N06S3-09 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 8.4 mΩ ID 80 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature |
Original |
IPD80N06S3-09 PG-TO252-3-11 QN0609 |