TRANSISTOR 2SC380 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2SC3603

Abstract: 2SC3809
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in m illim eters * The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters FEATURES • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product perform ance in a w ide operating

2SC380

Abstract: transistor 2sc380
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

2SC380

Abstract: transistor 2sc380 2sc380 NPN transistor
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

2SC3804

Abstract: Transistor C 3199 transistor 431 N 251C transistor 3199 a 431 transistor transistor 431 ab RESISTOR NETWORK MAKE MITSUBISHI
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3804 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION Dimensions in mm OUTLINE DRAWING 2SC3804 is a silicon NPN epitaxial planar-type transistor specifically designed fo r power amplifiers in the 800 ~ 900MHz band range. FEATURES

2SC380

Abstract: transistor 2sc380
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

2sc380

Abstract: transistor 2sc380
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g

2SC380

Abstract: transistor 2sc380 2sc380 NPN transistor
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2sc3807

Contextual Info: Ordering number:ENN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043B Features [2SC3807] 8.0

2043B

Abstract: 2SC3808 ITR06043 ITR06044 ITR06045 ITR06046 ITR06047
Contextual Info: Ordering number:ENN2015A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043B Features [2SC3808] 8.0

a0629

Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
Contextual Info: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.

2SC3807C

Contextual Info: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.

EN210

Abstract: 2SC3808 VEBO-15V
Contextual Info: Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043A Features [2SC3808] · Large current capacity IC=2A .

2sc3807

Abstract: transistor 2SC3807 2SC3807 equivalent VEBO-15V
Contextual Info: Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043A Features [2SC3807] · Large current capacity IC=2A .

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC380TM TRANSISTOR NPN 1. EMITTER FEATURES z High Frequency Amplifier Applications 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors TO-126 2SC3807 TRANSISTOR NPN FEATURES z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage

"MARKING VO"

Abstract: 2SA1483 2SC3803
Contextual Info: TO SH IBA 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm VIDEO AMPLIFIER APPLICATIONS 4.6MAX. 1.7MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Transition Frequency : frp = 200MHz (Typ.)

2SA1483

Abstract: 2SC3803
Contextual Info: TO SH IBA 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm VIDEO AMPLIFIER APPLICATIONS 4.6MAX. 1.7MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Transition Frequency : frp = 200MHz (Typ.)

2sc3807

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR NPN TO – 126C FEATURES z Large Current Capacity z High DC Current Gain z Low Collector-Emitter Saturation Voltage 1. EMITTER 2. COLLECTOR 3. BASE

2SC3805

Contextual Info: TOSHIBA 2SC3805 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3805 TV HORIZONTAL DEFLECTION OUTPUT APPLICATIONS TV CHROMA OUTPUT APPLICATIONS • • High Voltage : Vc e O = 300 V Low Output Capacitance : C0b = 3.0 pF (Typ.) MAXIMUM RATINGS (Ta = 25°C)