Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2D Search Results

    TRANSISTOR 2D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR 2D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original
    kia7900pitc7sh04fukic7sh04fusc604+16kac3301qnm51943kia7042ap/aftc7sh08fukic7sh08fult1937oz960khb*9d5n20pmb4213kia78*pimn1280f10p048kia7812amje13007mb4213 equivalenttransistor smd n2 3j PDF

    fp104

    Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,


    Original
    en4655fp1042sa1729sb05-05cp PDF

    marking EB 202 diode

    Abstract: 2SA1729 FP104 SB05-05CP marking EB 202 transistor EN4655
    Contextual Info: Ordering number:EN4655 FP104 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2devices PNP transistor and Shottky barrier diode contained in one package,


    Original
    en4655fp1042sa1729sb05-05cp+2marking eb 202 diodemarking eb 202 transistor PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan
    an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+72sd323ym 7137 3dda 3807 pdf transistorinverter welder 4 schematic2n5630thyristor br 4031n3492 PDF

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original
    2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611 PDF

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original
    2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488varistor ruse110ntransistor2sc54872sa2003se090nhigh voltage transistorse090rbv-4062sc5586 PDF

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original
    2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa14882sc5586transistor 2sc5586diode ru 3am2sa2003microwave oven diodesingle phase bridge rectifier ic with output 1a2sc5487rg-2a diodedual mosfet 606tfd312s-f PDF

    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Value Unit


    Original
    ot-23mmbta92-200v-10ma+3-30ma-20ma30mhz PDF

    marking 2d

    Abstract: MMBTA92 SOT-23 2D sot 23 transistor sot23 marking 2d 2D SOT23
    Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA92 SOT-23 TRANSISTOR PNP FEATURES 1. BASE 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Value Units


    Original
    ot-23mmbta92-100a-200v+8-10ma-30ma-20mamarking 2dsot-23 2dsot 23 transistorsot23 marking 2d2d sot23 PDF

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Contextual Info: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original
    2sa11862sc40242sa12152sc4131+152sa12162sc4138100vac2sa12942sc4140fgt313transistor fgt313sla4052rg-2a diodesla5222fgt412rbv-3006fmn-1106ssla5096diode ry2a PDF

    sot23 marking 2d

    Abstract: 2D SOT23 2D TRANSISTOR marking 2D
    Contextual Info: MMBTA92 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — High voltage transistor MARKING:2D Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original
    mmbta92ot-23-100a-200v+7-10ma-30ma-20masot23 marking 2d2d sot232d transistormarking 2d PDF

    C11531E

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2383 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE SWITCHING PACKAGE DRAWING UNIT: mm The 2SD2383 is an element realizing high voltage in small dimension. This transistor is ideal for downsizing sets requiring high voltage.


    Original
    2sd2383c11531e PDF

    BUK454-500B

    Abstract: BUK454-500A K4545 buk454 T0220AB drain
    Contextual Info: N AMER SSE PHILIPS/DISCRETE 0Q 2D M 7G D S B U K 454-500A B U K 454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    buk454-500abuk454-500bbuk454-500a+4-500bt0220abk4545drain PDF

    power Junction FET advantages and disadvantages

    Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet
    Contextual Info: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor


    Original
    ed-195966-3084epower junction fet advantages and disadvantages5257 transistor+3thermal conductivity ceramic fet2t transistor surface mountmicrowave fet PDF

    Contextual Info: N AMER PHILIPS/DISCRETE b^E D bbS3^31 QQ2T474 72T APX DLVVO / V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is


    OCR Scan
    qq2t474 PDF

    LDO sot23

    Abstract: APP1861 CMPT2222A MAX1735 MAX1735EUK25 RMC18-18RJB transistor sot23-3 RMC181
    Contextual Info: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: pass transistor, linear regulator, LDO, increase LDO current, more load current Jan 24, 2003 APPLICATION NOTE 1861 Pass Transistor Boosts Current from Negative Linear Regulator Abstract: The addition of a pass transistor to the circuit of Figure 1 allows the linear regulator LDO to deliver


    Original
    com/an1861max1735an1861app1861+7appnote1861ldo sot23cmpt2222amax1735euk25rmc18-18rjbtransistor sot23-3rmc181 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original
    rej01g0001-0400rjh3047rjh3077rjp3047+7rjh3047dpkrjp3049rjp6065rjp3053rjp3042smd code fx mosfetrjp6055 PDF

    2DI50D-050A

    Abstract: M208 2di50 1A 300V TRANSISTOR
    Contextual Info: 2DI50D-050A 50A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 :Features 特長: 大電流 High Current が高い High DC Current Gain hFE が高い


    Original
    2di50d-050a25to30kgfcmm2082di50+11a 300v transistor PDF

    1000V 20A transistor

    Abstract: 2DI30D-100 transistor VCEO 1000V
    Contextual Info: 2DI30D-100 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 :Features 特長: 大電流 High Current が高い High DC Current Gain hFE が高い


    Original
    2di30d-10025to30ic1000v 20a transistortransistor vceo 1000v PDF

    E82988

    Abstract: vebo 2DI50M-050 dc servo drive schematic schematic welding machine M208 fuji transistor module fuji servo drive transistor servo drive
    Contextual Info: 2DI50M-050 50A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 :Features 特長: hFE が高い が高い High DC Current Gain 絶縁形 Insulated Type


    Original
    2di50m-050e82988vebodc servo drive schematic+5schematic welding machinem208fuji transistor modulefuji servo drivetransistor servo drive PDF

    bdl 40

    Abstract: l43 transistor transistor marking 2d ghz 9335 895 BFG480W
    Contextual Info: DISCRETE SEMICONDUCTORS sheet BFG480W NPN wideband transistor Preliminary specification Supersedes data of 1998 Mar 06 File under Discrete Semiconductors, SC14 Philips Semiconductors 1998 Jul 09 PHILIPS Philips Semiconductors Preliminary specification NPN wideband transistor


    OCR Scan
    bfg480wsca6004/00/02/pp1bdl 40+3l43 transistortransistor marking 2d ghz9335 895 PDF

    2DI75M-120

    Abstract: 1di200
    Contextual Info: ^ g jjjf /\°7 — x / W 7s / Power Devices • / v'9 —h 7 > y X ^ i y . i “ ^ Power Transistor Modules 1 2 0 0 V ? 7 * S h F E / '* 7 - h 7 > '> '^ 5 f ;E ' > ' a - ^ 1200 volts class high hFE power transistor modules m £ V cbo Device type 2DI50M-120


    OCR Scan
    2di50m-1202di75m-1202di100m-1202di150m-120+71di200m-1201di300m-120t25c3m20476di15m-1206di30m-1201di200 PDF

    2DI30M-050

    Abstract: M208 diode 30A 600v T 250 transistor
    Contextual Info: 2DI30M-050 30A FUJI POWER TRANSISTOR MODULE パワートランジスタモジュール POWER TRANSISTOR MODULE 外形寸法 : Outline Drawings 外形寸法: 特長 :Features 特長: hFE が高い が高い High DC Current Gain 絶縁形 Insulated Type


    Original
    2di30m-050m208diode 30a 600vt 250 transistor PDF

    BP317

    Abstract: PMBTA42 PMBTA92
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA92 PNP high-voltage transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 13 Philips Semiconductors Product specification PNP high-voltage transistor PMBTA92 FEATURES PINNING


    Original
    m3d088pmbta92pmbta42mam256+3sca63115002/00/04/pp8bp317 PDF