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    TRANSISTOR 2515 Search Results

    TRANSISTOR 2515 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR 2515 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52 PDF

    transistor bu

    Abstract: 2515DX transistor FS 22 SM BU2515DX transistor FS 22 SM 10
    Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2515DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended Tor use in horizontal deflection circuits of pc monitors.


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    bu2515dx100-pq2515dxtransistor bu+2transistor fs 22 smtransistor fs 22 sm 10 PDF

    Helipot

    Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
    Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used


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    mil-s-19500/425jan2n5431jantx2n5431pulse-repe0/425+7mil-s-19500helipotmil-std-750-testcapacitor ttc 342j3 diode st20.000hunijunction application note PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1n6227silecgg 841n623+62g300chn 543ic hxj 20381n52398in52401n48 zener diode PDF

    Contextual Info: <£s.m.i- 2onau,ctoi \Pioaucti, Una. TELEPHONE: (973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f.


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    blv2018-j20ot123a PDF

    5N520

    Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
    Contextual Info: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V


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    0-300v2n19382n19372n3265+142n62602n62612n63152n63172n63162n63185n5205n522n32682n60n5n5202606j2n48662n6278 PDF

    2SA1626

    Abstract: S0532 TRANSISTOR BO 346 X108 TIA03
    Contextual Info: NEC À Silicon Transistor 2SA1626 PNP ¡S& ÉL Sil i E X -f "J *f-> *f PN P Silicon Triple Diffused Transistor High Speed High Voltage Switching ft ftw m m o PtjÉJ'E'C-to V Ceo = — 400 V o x ^ y f > ^ " X : mm 7.0 M A X . b°— tf<0.7 /US T a = 25 ° C )


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    MHQ6100

    Abstract: IC AL 6001
    Contextual Info: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON


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    mhq6100amil-s-19500/xxxo-116mhq6100+1ic al 6001 PDF

    MRF260

    Abstract: MRF262 MRF260 motorola B 647 AC transistor S0235
    Contextual Info: I MOT OROL A SC XSTRS/R MbE F D b3b?2SM omMsa? MOTOROLA - SEMICONDUCTOR TECHNICAL DATA 3 3 *2» - 0*0 MRF260 The R F Line SW 1 3 6 -1 7 5 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . d esigned fo r 12.5 V o lt VHF large-signal p o w e r a m p lifie r a p p li­


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    mrf260mrf261mrf262mrf264+3mrf260 motorolab 647 ac transistors0235 PDF

    Contextual Info: MOTOROLA SC XSTRS/R F •4bE D ■ b3b72 SM OOReSOT T ■ MOTb / MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete Military Products DM0 lllllll NPN Silicon Small-Signal Transistor . . . designed for general-purpose switching and am plifier applications MM5682


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    b3b72mm5682mil-s-19500/xxxo-116 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    Contextual Info: Available as: VOLTAGE CONTROLLED OSCILLATOR 1500 TOM9211 - 2750 MHz TOM9211, 4 Pin TO-8 T4 TON9211, 4 Pin Surface Mount (SM3) TOP9211, 4 Pin Flatpack (FP4) BXO9211, Connectorized Housing (H1) Features ! ! ! ! Low Noise Bipolar Transistor Broad Tuning Range


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    om9211on9211op9211bxo9211 PDF

    MARKING RM* dbm sot89

    Contextual Info: SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


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    sxb-2089z43dbm24dbman075+2eds-104625marking rm* dbm sot89 PDF

    Data sheet 1713

    Abstract: BXO9330
    Contextual Info: VOLTAGE CONTROLLED OSCILLATOR 1700 TOM9330 - 2700 MHz Available as: TOM9330, 4 Pin TO-8 T4 TON9330, 4 Pin Surface Mount (SM3) BXO9330, Connectorized Housing (H1) Features Maximum Ratings ! Low Noise Bipolar Transistor ! Operating Case Temp. 0 ºC to + 70 ºC


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    om9330on9330bxo9330data sheet 1713 PDF

    Contextual Info: Available as: VOLTAGE CONTROLLED OSCILLATOR TOM9330, 4 Pin TO-8 T4 TON9330, 4 Pin Surface Mount (SM3) B X09330, Connectorized Housing (H1) Features • Low Noise Bipolar Transistor ■ Operating Case Temp. 0 °C to + 70 °C ■ Environmental Screening available


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    om9330on9330x09330 PDF

    sot 23 S01

    Abstract: SXB-2089 TAJB105KLRH SXB-2089Z MCH185A1R8CK AN-078 43ACP
    Contextual Info: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


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    sxb-2089zan075eds-104625sot 23 s01+5sxb-2089tajb105klrhmch185a1r8ckan-07843acp PDF

    TAJB105KLRH

    Contextual Info: Preliminary SXB-2089Z Product Description Sirenza Microdevices’ SXB-2089Z amplifier is a high linearity InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in a low-cost, surface-mountable plastic package. 5-2500 MHz Medium Power InGaP/GaAs HBT Amplifier


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    sxb-2089z43dbm24dbman075+2eds-104625tajb105klrh PDF

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


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    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


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    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


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    an10933blf7g27ls-150pis-95crcw08050r0fkea+83214w-1-201es0805w104k1hrn-p4blf7g27-150pgrm32er7ya106k88lgrm31mr71h105k88lnjm 78l08ua-nd30rf35national 2n2222 PDF

    P9211

    Contextual Info: VOLTAGE CONTROLLED OSCILLATOR TOM9211 1500 - 2750 MHz Available as: TOM9211, 4 Pin TO-8 T4 TON9211, 4 Pin Surface Mount (SM3) TO P9211, 4 Pin Flatpack (FP4) BX09211, Connectorized Housing (H1) Features • ■ ■ ■ Low Noise Bipolar Transistor Broad Tuning Range


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    om9211on9211p9211bx09211 PDF

    TOM9211

    Abstract: transistor 45 f 123 BXO9211
    Contextual Info: VOLTAGE CONTROLLED OSCILLATOR 1500 TOM9211 - 2750 MHz Available as: TOM9211, 4 Pin TO-8 T4 TON9211, 4 Pin Surface Mount (SM3) TOP9211, 4 Pin Flatpack (FP4) BXO9211, Connectorized Housing (H1) Features „ „ „ „ Low Noise Bipolar Transistor Broad Tuning Range


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    om9211on9211op9211bxo9211+2tom9211transistor 45 f 123 PDF