TRANSISTOR 22P Search Results

germanium transistors PNP

Abstract: IBM43RF0100 SiGe RF TRANSISTOR pnp germanium transistor SiGe PNP TRANSISTOR MAKING LIST SiGe PNP transistor FMMT2907ATA bipolar transistor ghz s-parameter J1 TRANSISTOR
Contextual Info: Application Note Evaluating the IBM43RF0100 SiGe Low Noise Transistor Introduction The IBM43RF0100 SiGe High Dynamic Range Low Noise Transistor is a silicon-germanium SiGe NPN transistor designed for high performance, low cost applications. IBM’s SiGe manufacturing and packaging techniques result in a transistor with high gain, low noise,

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • •

Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

TRANSISTOR MARKING YB

Abstract: RN1701JE RN1706JE RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE
Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN2701JE~RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN2701JE,RN2702JE,RN2703JE RN2704JE,RN2705JE,RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm

RN1701JE

Abstract: RN1702JE RN1703JE RN1704JE RN1705JE RN1706JE RN2701JE RN2706JE
Contextual Info: RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm

RN1701JE

Abstract: RN1702JE RN1703JE RN1704JE RN1705JE RN1706JE RN2701JE RN2706JE
Contextual Info: RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm

Contextual Info: RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1701JE,RN1702JE,RN1703JE RN1704JE,RN1705JE,RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm

RD70HVF1

Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

transistor D 5024

Abstract: RD00HVS1 8582
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD07MUS2B

Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Contextual Info: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD70HVF1-101

Abstract: RD70HVF1 RD70HVF 70w power amplifier rd70hvf1 60W VHF circuit RF amplifier
Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.

8582

Contextual Info: < Silicon RF Power MOS FET Discrete > RD00HVS1 RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically 4.4+/-0.1 designed for VHF/UHF RF amplifiers applications. TYPE NAME

RD70HVF

Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

RD00HVS1

Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD70HVF

Contextual Info: < Silicon RF Power MOS FET Discrete > RD70HVF1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers DRAWING 25.0+/-0.3 applications.

marking 7W 66

Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15