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    TRANSISTOR 1P3 Search Results

    TRANSISTOR 1P3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    TRANSISTOR 1P3 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    Contextual Info: 0.6um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)


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    1P3M

    Abstract: 530 transistor
    Contextual Info: 0.6um 1P3M Logic 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V / 5V ƒ Starting Material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical) 145Å


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    1p3m530 transistor PDF

    1P3M

    Contextual Info: 0.5um 1P3M Logic 3.3V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 3.3V / 3.3V ƒ ƒ Starting material Well Structure P-type (100), 9~12 Ω/□ CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS


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    50um21p3m PDF

    Vg 5V

    Contextual Info: 0.5um 1P3M Embedded Flat ROM 5V updated in Oct 01, 2004 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS


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    50um260um2vg 5v PDF

    LOCOS

    Abstract: DSASW0024855 1P3M
    Contextual Info: 0.5um 1P3M Logic 5V updated in 2005.03.16 Features ƒ Vdd Core/IO 5V/5V ƒ Starting material P-type (100), 9~12 Ω/□ ƒ Well Structure CMOS Twin-well ƒ Isolation Conventional LOCOS, Bird's Beak = 0.1 um/side ƒ Transistor Channel Buried channel PMOS Gate oxide (Electrical)


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    descrip-26050um2locosdsasw0024855+11p3m PDF

    transistor 1p3

    Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
    Contextual Info: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S


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    23sbgsbfq19p62702-f1060ot-89+6d2hm35transistor 1p3marking 19sic marking fzf1060e23s PDF

    Contextual Info: 32E D • 023b3SQ Q017027 H H S I P NPN Silicon RF Transistor —» 0 1 . 1 7 BFR93P SIEMENS/ SPCLn SEMICONDS ' ' _ • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    023b3sqq017027bfr93pot-23 PDF

    DIODE ITT 310

    Abstract: OC70P2 transistor 1p3
    Contextual Info: c*o OPTOELECTRONICS |* _ PH O TO TR A N SISTO R O P T IC A L IN T E R R U P T E R S W IT C H ES •Q £ h* .312 7.83 .j (- 1 2 4 (3 151 J-.1P3 ¡2.6) NOM .122(3.10) I T1 C ia p Ù o e r îiii'e Pai s W itt! ' ■/JniU' M u m b i; tm in . ._££>/S e iì a s .,


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    h21a1c70p1c70p2diode itt 310+2oc70p2transistor 1p3 PDF

    INTERMETal diode

    Abstract: zener diode BN NMOS transistor 0.18 um CMOS BPSG
    Contextual Info: 0.6um 1P3M High Voltage 12V / 12V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,12V/12V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


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    2v/12vintermetal diodezener diode bnnmos transistor 0.18 um cmos+1bpsg PDF

    NMOS transistor 0.18 um CMOS

    Abstract: 1P3M LOCOS
    Contextual Info: 0.6um 1P3M High Voltage 16V / 16V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V,16V/16V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Triple-well (Nwell,HNWell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


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    6v/16vnmos transistor 0.18 um cmos1p3mlocos PDF

    Contextual Info: 0.6um 1P3M High Voltage 20V / 5V updated in 2005.03.29 Features ƒ Voltage Logic,High Voltage 5V/5V, 20V/5V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Twin-well (Nwell, Pwell) ƒ Isolation Conventional LOCOS, Bird's Beak = 0.18 um/side


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    TRANSISTOR BI 185

    Abstract: transistor bI 340 BI 340 cmos transistor 0.35 um
    Contextual Info: 0.6um 1P3M High Voltage 40V / 40V updated in 2005.03.30 Features ƒ Voltage Logic,High Voltage 5V/5V,40V/40V ƒ Starting material P-type (100), 9~12 Ω-cm ƒ Well Structure CMOS Quadruple-Well ( Hnwell, Hpwell for HV-Device, Nwell, Pwell for LV-Device ) ƒ


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    0v/40vtransistor bi 185transistor bi 340bi 340+1cmos transistor 0.35 um PDF

    1P3M

    Contextual Info:       0.6um 1P3M Logic 5V      Features !   *1*1 !        !     !    !    !"#$% 


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    1p3m PDF

    1P3M

    Abstract: resistance
    Contextual Info:       0.5um 1P3M Logic 5V      Features ! 8 % #  ?8?8 !      !    !" " ! #$% % %& % '   )*$( +,- $) !


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    1p3mresistance PDF

    transistor 778

    Contextual Info:       0. 6um 1P3M Embedded Flat ROM 5V      Features !  ! " ,2,2 !     !     !    !" ! 


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    transistor 778 PDF

    Contextual Info:       0. 5um 1P3M Embedded Flat ROM 5V      Features ! 8 % #  >8>8 !      !    !" " ! #$% % %& % '   )*$( +,- $)


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    Contextual Info:       0.6um 1P3M High Voltage 12V / 12V      Features !     !         ! !" "        ! "   


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    Contextual Info:       0.8um 1P3M High Voltage 40V / 40V      Features !     !         !     ! "#$  " $ %& "' *  +$  $


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    Contextual Info:       0.6um 1P3M High Voltage 16V / 16V      Features !     !        !         ! "!#   


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    transistor 1p3

    Abstract: transistor z3
    Contextual Info: DC to 2.4 GHz High 1P3 Active Mixer Preliminary Technical Data FEATURES Double Balanced Gilbert Cell Mixer Conversion Gain: +6dB Input IP3: +18 dBm LO Drive: -10 dBm Noise Figure: 12 dB P1dB: +11 dBm Differential LO, IF and RF Ports 50 . LO Input Impedance


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    ad8343ad8343_transistor 1p3transistor z3 PDF

    HTL LOGIC

    Abstract: analog plc sensor wiring diagram LIMIT SWITCH namur application mcr-f-ui-dc Wiring Diagram RPM module Turbine Flow meter Proximity Sensor 4-20 out incremental encoders htl "zero speed" namur magnetic pickup speed sensor
    Contextual Info: Programmable Universal Frequency Transducer Data Sheet 1140A April 2000 Features • Completely programmable frequency range from 0.1 Hz…120 kHz programmed using membrane keypad • LCD to display the input or output signals • 3-way isolation of signals ( input, output and power


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    htl logicanalog plc sensor wiring diagramlimit switch namur applicationmcr-f-ui-dc+6wiring diagram rpm moduleturbine flow meterproximity sensor 4-20 outincremental encoders htlzero speed" namurmagnetic pickup speed sensor PDF

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Contextual Info: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


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    fc02525-microncmosaf32k8af25+8nmos native pspice modelresistor bsim36t srammicron cmos sensor connectionbsim3nmos transistorpmos vtbsim3 model PDF