TRANSISTOR 185 Search Results

DFN3020

Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

ZO 103 MA 75 623

Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

IC SEM 2105

Abstract: 3771 nec
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low

"dual TRANSISTORs" pnp npn

Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
Contextual Info: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

Contextual Info: 1719-2 2 Watts, 22 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-2 is a COMMON BASE transistor capable of providing 2 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and

Contextual Info: 1719-8 8 Watts, 28 Volts, Class C Microwave 1700 - 1900 MHz GENERAL DESCRIPTION The 1719-8 is a COMMON BASE transistor capable of providing 8 Watts, Class C output power over the band 1750-1850 MHz. The transistor includes input prematching for full Broadband capabiliy. Gold metalizaton and

1718-32L

Contextual Info: 1718-32L 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1718-32L is a COMMON BASE transistor capable of providing 32 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

100 watt transistor

Contextual Info: 1819-35 35 Watt - 28 Volts, Class C Microwave 1750 - 1850 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819-35 is a COMMON BASE transistor capable of providing 35 Watts of Class C, RF output power over the band 1750-1850 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

NP82N06ELC

Abstract: MP-25 NP82N06CLC NP82N06DLC
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06CLC, NP82N06DLC, NP82N06ELC SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION

D1629

Abstract: 2SK3653
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3653 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK3653 is suitable for converter of ECM. +0.1 0.3 ±0.05 0.13 –0.05 FEATURES

mcz33937

Contextual Info: Freescale Semiconductor Advance Information Document Number: 33937 Rev. 6.0, 9/2009 Three Phase Field Effect Transistor Pre-driver 33937 33937A The 33937 and 33937A are Field Effect Transistor FET predrivers designed for three phase motor control and similar

D2088 TRANSISTOR

Abstract: D2088 transistor D2088 epitaxial transistor high voltage 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

CMPT5401

Contextual Info: Central CMPT5401 TM Semiconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

MCZ33937

Abstract: MCZ33937A mc3393 MC33937 ISO7637 MUR120 54-PIN 3 phase alternator automatic voltage regulator alternator circuit diagram
Contextual Info: Freescale Semiconductor Advance Information Document Number: 33937 Rev. 6.0, 9/2009 Three Phase Field Effect Transistor Pre-driver 33937 33937A The 33937 and 33937A are Field Effect Transistor FET predrivers designed for three phase motor control and similar

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

Contextual Info: Central CMPT5401 Sem iconductor Corp. PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5401 type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage amplifier applications.

D2088 TRANSISTOR

Abstract: Transistor D2088 D2088 transistor 2sD2088 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

transistor D1658

Abstract: d1658 2SD1658
Contextual Info: 2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD1658 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

transistor equivalent table 557

Abstract: 21045F
Contextual Info: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication