TRANSISTOR 1602 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a

B0159

Contextual Info: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • TO-92 SOT-23 Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625 mW ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Symbol Rating Unit Collector-Base Voltage

mj423 motorola

Abstract: mj423
Contextual Info: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 4M VOLTS 125 WATTS . . . designed for medium-to-high voltage inverters, converters, regulators and switching circuits.

Contextual Info: PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW . TO-92 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C ) • Symbol Rating Unit Collector-Base Voltage VCBO 40

2SC3835

Abstract: humidifier circuit switch NPN TC4125
Contextual Info: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage

2SC3835

Contextual Info: UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER SYMBOL RATING UNIT Collector-Base Voltage

transistor P2F

Abstract: ON MARKING P2F p2f transistor PZT2907AT1G PZT2907AT3 on semiconductor p2f
Contextual Info: PZT2907AT1 Preferred Device PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

bd169

Abstract: motorola sps transistor sps transistor B0169 bd170
Contextual Info: MOTOROLA Order this document by B0169/D SEMICONDUCTOR TECHNICAL DATA BD169 P lastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTOR NPN SILICON 80 VOLTS 20 WATTS . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi

Contextual Info: PJ2N3906 PNP Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCEO = 40V Collector Dissipation: PC max = 625 mW . TO-92 SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta = 25 ℃) Rating Pin : 1. Emitter 2. Base 3. Collector Pin : 1. Base

Contextual Info: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO

Contextual Info: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

N60E

Contextual Info: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

MGP20N

Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

transistor a09

Abstract: GP7N60 MGP7N60E
Contextual Info: MOTOROLA O rder th is docum ent by MGP7N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP7N60E Insulated G a te Bipolar Transistor N-Channel Enhancem ent-M ode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

diode lt 238

Abstract: 21N60ED
Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced

1606 B

Contextual Info: TO SH IBA RN1601-RN1606 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1601, RN 1602, RN1603, RN1604, RN1605, RN 1606 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND Unit in mm DRIVER + 0.2 CIRCUIT APPLICATIONS. 2 .8 -0 .3 + 0.2 1.6-0.1

Contextual Info: International IOR Rectifier P D - 9. 1602 IRG4BC20F PRELIMINARY Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Fast: Optimized for medium operating frequencies 1- 5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

2SC3834

Abstract: DC DC converter output 200V ic
Contextual Info: SavantIC Semiconductor Product Specification 2SC3834 Silicon NPN Power Transistors DESCRIPTION •Switching transistor ·With TO-220 package APPLICATIONS ·For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to