MGP4N60E Search Results
MGP4N60E Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MGP4N60E | Motorola | Insulated Gate Bipolar Transistor | Original | 127.09KB | 6 | ||
| MGP4N60E | On Semiconductor | Insulated Gate Bipolar Transistor N-Channel | Original | 123.56KB | 5 | ||
| MGP4N60E | On Semiconductor | IGBT Chip, N Channel, 600V, TO-220AB, 3-Pin | Original | 110.03KB | 6 | ||
| MGP4N60E/D | Motorola | IGBT IN TO-220 4.0 A | Original | 123.56KB | 5 | ||
| MGP4N60ED | On Semiconductor | IGBT Chip, N Channel, 600V, TO-220AB, 3-Pin | Original | 124.51KB | 6 | ||
| MGP4N60ED | On Semiconductor | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | Original | 149.22KB | 6 | ||
| MGP4N60E-D | On Semiconductor | Insulated Gate Bipolar Transistor N-Channel Enhanc | Original | 110.03KB | 6 | ||
| MGP4N60ED/D | Motorola | IGBT & DIODE IN TO-220 4.0 A | Original | 151.37KB | 6 | ||
| MGP4N60ED-D | On Semiconductor | Insulated Gate Bipolar Transistor with Anti-Parall | Original | 124.52KB | 6 | ||
| MGP4N60EDG | On Semiconductor | IGBT Chip: N Channel: 600V: TO-220AB: 3-Pin | Original | 124.51KB | 6 | ||
| MGP4N60EG | On Semiconductor | IGBT Chip: N Channel: 600V: TO-220AB: 3-Pin | Original | 110.04KB | 6 |
MGP4N60E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
ignition IGBTS
Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
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OCR Scan |
mgp4n60emgp7n60emgp11n60emgp14n60e+13 | |
MGP4N60ED
Abstract: ad 152 transistor
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Original |
mgp4n60ed/dmgp4n60edigbtmgp4n60ed/dad 152 transistor | |
P4N60Contextual Info: MOTOROLA O rder this docum ent by M G P4N60ED/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP4N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C |
OCR Scan |
p4n60ed/dmgp4n60edp4n60 | |
4n60eContextual Info: M O TO RO LA O rder this docum ent by M GP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced |
OCR Scan |
gp4n60e/d4n60e | |
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Contextual Info: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high |
OCR Scan |
mgp4n60e/d | |
GP4N60Contextual Info: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 4.0 A @ 90°C 6.0 A @ 25°C |
OCR Scan |
mgp4n60ed/dgp4n60 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
OCR Scan |
mgp4n60e | |
MGP4N60E
Abstract: transistor 342 pf
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Original |
mgp4n60e/dmgp4n60etransistor 342 pf | |
MGP4N60EContextual Info: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
Original |
mgp4n60e/dmgp4n60e | |
MGP4N60EContextual Info: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high |
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mgp4n60e/dmgp4n60e | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M GP4N60E/D Designer's Data Sheet I n s u l a t e d Gate B ip o lar T r a n s i s t o r MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
OCR Scan |
gp4n60e/dmgp4n60e21a-06o-220ab | |
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Contextual Info: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP4N60ED N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0 -2 2 0 4.0 A @ 90°C 6.0 A @ 25°C |
OCR Scan |
mgp4n60ed/d | |
MGP4N60EDContextual Info: MOTOROLA Order this document by MGP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode MGP4N60ED N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–220 4.0 A @ 90°C 6.0 A @ 25°C |
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mgp4n60ed/dmgp4n60edigbtmgp4n60ed/d | |
STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
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2002-sepstr-g6551str-f6654g6551+7 | |
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SKIIP 33 nec 125 t2
Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
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734tluweb-modem-34hcs412/wmtlv320aic10ipfb+15 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
P4N60Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE |
OCR Scan |
mgp4n60edp4n60 | |
wiring diagram brushless AC motor
Abstract: IEC555-1 2x27k AN1590 IR2112 circuit motors simple dc motor model MOTOROLA sensorless brushless dc controller IR2112 application note 300w dc motor speed controller LM339n as motor controller
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an1627/dan1627mc68hc05mc4+11 | |
LM339n as motor controller
Abstract: wiring diagram brushless AC motor 5223 eprom 300w BLDC bridge 300w dc motor speed controller AN1590 PWM IR2112 230v to 15v dc smps circuit diagram IR2112 MC68HC705MC4
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an1627/dan1627mc68hc05mc4+11 | |
SGH80N60RUFD
Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
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sgr2n60ufdsgp10n60rufsgp10n60rufdsgh10n60rufd+15 | |
hall marking code A04
Abstract: M143206EVK differences uc3842a uc3842b toshiba satellite laptop battery pinout 2N3773 audio amplifier diagram toshiba laptop battery pack pinout BC413 motorola transistor sj 5812 M68HC705X16 ABB inverter motor fault code
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OCR Scan |
2phx14226-31hall marking code a04m143206evkdifferences uc3842a uc3842b+7 | |
tl4311
Abstract: SOP23-5 2N4920 LM337B uc3842a uc3842b MGB20N40CLT4 sg3526 bc558b TO-266AA mje150
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sg388ch/dr14525tl4311sop23-5+8 | |
PWM IR2112
Abstract: 230v dc motor drive circuit diagram DC MOTOR SPEED CONTROL USING IGBT 300v dc 230v DC motor speed controllers 300w dc motor speed controller wiring diagram brushless AC motor three phase bldc motor drive schematic hex code LM339n as motor controller LM339 AN1627
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an1627/dan1627mc68hc05mc4+10 | |