GP4N60 Search Results
GP4N60 Price and Stock
Rochester Electronics LLC MGP4N60EIGBT, 6A, 600V, N-CHANNEL |
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MGP4N60E | Bulk | 412 |
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Rochester Electronics LLC MGP4N60EDIGBT, 6A, 600V, N-CHANNEL |
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MGP4N60ED | Bulk | 560 |
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onsemi MGP4N60EDInsulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB |
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MGP4N60ED | 3,631 | 1 |
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onsemi MGP4N60EInsulated Gate Bipolar Transistor, 6A, 600V, N-Channel, TO-220AB |
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MGP4N60E | 2,810 | 1 |
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GP4N60 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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4n60eContextual Info: M O TO RO LA O rder this docum ent by M GP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP4N60E In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced |
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GP4N60E/D 4n60e | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this docum ent by M GP4N60E/D Designer's Data Sheet I n s u l a t e d Gate B ip o lar T r a n s i s t o r GP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced |
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GP4N60E/D MGP4N60E 21A-06 O-220AB | |
GP4N60Contextual Info: MOTOROLA Order this document by GP4N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP4N60ED Insulated G ate Bipolar Transistor w ith A n ti-P arallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T 0-2 20 4.0 A @ 90°C 6.0 A @ 25°C |
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MGP4N60ED/D GP4N60 |