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    GP7N60 Search Results

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    GP7N60 Price and Stock

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    IXYS Corporation IXGP7N60C

    IGBT 600V 14A TO-220-3
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    DigiKey IXGP7N60C Tube
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    IXYS Corporation IXGP7N60B

    IGBT PT 600V 14A TO-220-3
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    IXYS Corporation IXGP7N60BD1

    IGBT 600V 14A TO-220-3
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    IXYS Corporation IXGP7N60CD1

    IGBT 600V 14A TO-220-3
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    onsemi MGP7N60ED

    Insulated Gate Bipolar Transistor, 10A, 600V, N-Channel, TO-220AB
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    Rochester Electronics MGP7N60ED 5,116 1
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    GP7N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor a09

    Abstract: GP7N60 MGP7N60E
    Contextual Info: MOTOROLA O rder th is docum ent by GP7N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP7N60E Insulated G a te Bipolar Transistor N-Channel Enhancem ent-M ode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


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    MGP7N60E/D GP7N60E T0-220 transistor a09 GP7N60 MGP7N60E PDF

    MGP7N60E

    Contextual Info: MOTOROLA O rder this docum ent by M GP7N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP7N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate T his Insulated G ate B ip olar T ra n sisto r IG BT uses an advanced


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    GP7N60E/D MGP7N60E PDF