TRANSISTOR 12W 14 Search Results

MOSFET mark J7

Abstract: 78s12 RD12MVS 043mm transistor t06 19
Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

a 1757 transistor

Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

transistor+SMD+12W+MOSFET

Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power

a 1757 transistor

Abstract: 78s12 GRM40 RD12MVS1 T112
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

mosfet marking 12W

Abstract: 12w marking GRM40 RD12MVS1 T112
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

a 1757 transistor

Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

78s12

Abstract: RD12MVS1-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor

AP3970P-G1

Abstract: 8 dip 6200 smps ic AP3968M-G1 1N4007 rectifier diode AP3968 AP3970 AP3970SP-G1 AP3970P7-G1 SMPS Switcher IC of DIP 7 DIP7 SMPS
Contextual Info: Preliminary Datasheet Primary Side Power Switcher for Off-line SMPS General Description Features The AP3968/69/70/70S consists of a primary side regulation controller and a high voltage transistor, and is specially designed for off-line power supplies within 12W output power. Typical applications

transistor J9

Abstract: 12w 66 transistor transistor 60 12w 12w 99
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2218 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS Features • • • • • • • 1.2 – 1.4 GHz 28 VOLTS INFINITE VSWR CAPABILITY @ RATED CONDITIONS

MS1553

Abstract: 12w 99
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1553 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED

12w transistor

Abstract: RF NPN POWER TRANSISTOR 60w
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1536 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED

MS1536

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1536 F RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 900 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM INPUT AND OUTPUT MATCHED

P04 transistor

Abstract: transistor p04 12W 02 transistor M57789 transistor zg transistor po3 transistor TC 10 12W 01 TRANSISTOR rf transistor s parameters
Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in : RF IN P U T © V C C I : 1s t. DC S U P P L Y VBB : B A S E B IA S S U P P L Y © V C C 2 : 2 n d . DC S U P P L Y ©PO : RF O U T P U T © G N D : FIN ABSOLUTE MAXIMUM RATINGS Tc = 2 5 <1C unless otherwise noted

transistor 12w

Abstract: M57789
Contextual Info: MITSUBISHI RF POWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO PIN : P in ©VCCI <DV8B ©VCC 2 ©Po GND : : : : : : RF INPUT 1st. DO SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS Tc = 25^C unless otherwise noted

Contextual Info: ^24^62^ DD1 7 2 6 3 547 • MITSUBISHI RFPOWER MODULE M57789 889-915MHz, 12.5V, 12W, FM MOBILE RADIO BLOCK DIAGRAM 1 . œHh PIN : P in RF INPUT Vcci 1st. DC SUPPLY <$VBB BASE BIAS SUPPLY ®VCC2 2nd. DC SUPPLY ®Po RF O UTPUT ®GND FIN ABSOLUTE MAXIMUM RATINGS 0 0 = 2 5 ^ unless otherwise noted

Contextual Info: MITSUBISHI RF POWER MODULE M57789 890-915MHz, 12.5V, 12W, FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © GHh PIN : DPin ©VCC1 @ VBB VCC2 ®Po ®GND RF INPUT 1st. DC SUPPLY BASE BIAS 2nd. DC SUPPLY RF OUTPUT FIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted

118-136

Abstract: 118-136 mhz
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1329 RF & MICROWAVE TRANSISTORS VHF FM APPLICATIONS Features • • • • • 150 MHz 28 VOLTS POUT = 60W GP = 7.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION:

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

20 watts transistor s-band

Abstract: j948
Contextual Info: 3135GN-170M Rev 1 3135GN – 170M 170 Watts - 60 Volts, 300 s, 10% 3100 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 3135GN-170M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 170 Watts of pulsed RF

2731GN-200M

Abstract: 2731GN power transistor gan s-band J6 transistor Gan transistor j374
Contextual Info: 2731GN-200M Rev 1 2731GN – 200M 200 Watts - 60 Volts, 200 s, 10% 2700 - 3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed RF

transistor d2118

Abstract: IB1011S190 d2118 D2118 transistor
Contextual Info: Part Number: Integra IB1011S190 TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011S190 is designed for L-Band avionics systems operating at 1030 and 1090 MHz. While operating in class C mode under 10µs, 1%, at VCC = 60V, this

tda2030

Abstract: amplifier circuit
Contextual Info: ÍZ J S C S -1H 0 M S 0 N TDA2030 14W Hi-Fi AUDIO AMPLIFIER DESCRIPTION The TDA2030 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class AB amplifier. Typically it provides 14W output power d = 0.5% at 14V/4Q; at ± 14V