RD12MVS1 Search Results

RD12MVS1 Datasheets (2)

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Mitsubishi

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
RD12MVS1		Mitsubishi	Silicon MOSFET Power Transistor, 175 MHz, 12 W	Original	PDF	21.29KB	2
RD12MVS1		Mitsubishi	RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W	Original	PDF	439.03KB	7

RD12MVS1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
RD12MVS1 Abstract: RD*mvs1 12w transistor Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TENTATIVE DESCRIPTION RD12MVS1 Silicon MOSFET Power Transistor,175MHz,12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz RD12MVS1 175MHz 175MHz) RD*mvs1 12w transistor	PDF
a 1757 transistor Abstract: MOSFET mark J7 GRM40 RD12MVS1 transistor 1758 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor MOSFET mark J7 GRM40 transistor 1758	PDF
MOSFET mark J7 Abstract: 78s12 RD12MVS 043mm transistor t06 19 Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) RD12MVS1-101 Oct2011 MOSFET mark J7 78s12 RD12MVS 043mm transistor t06 19	PDF
transistor+SMD+12W+MOSFET Contextual Info: < Silicon RF Power MOS FET Discrete > RD12MVS1 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W DESCRIPTION OUTLINE DRAWING RD12MVS1 is a MOS FET type transistor 6.0+/-0.15 0.2+/-0.05 amplifiers applications. (0.22) specifically designed for VHF RF power	Original	RD12MVS1 175MHz, RD12MVS1 175MHz) transistor+SMD+12W+MOSFET	PDF
a 1757 transistor Abstract: 78s12 GRM40 RD12MVS1 T112 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor 78s12 GRM40 T112	PDF
mosfet marking 12W Abstract: 12w marking GRM40 RD12MVS1 T112 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) mosfet marking 12W 12w marking GRM40 T112	PDF
a 1757 transistor Abstract: fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 RD12MVS1 T112 MOSFET 12W mosfet 4816 mosfet 1208 Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) a 1757 transistor fet 4816 mosfet marking 12W transistor with marking S 0922 GRM40 T112 MOSFET 12W mosfet 4816 mosfet 1208	PDF
78s12 Abstract: RD12MVS1-101 Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD12MVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION Silicon MOSFET Power Transistor, 175MHz, 12W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD12MVS1 is a MOS FET type transistor	Original	RD12MVS1 175MHz, RD12MVS1 175MHz 175MHz) 78s12 RD12MVS1-101	PDF
RD12MVP1 Abstract: RD12MVS1 2040D Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-VHF-034-B Date : 10th Feb. 2006 Rev. date : 22 th Jun. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 single-amplifier RF characteristics data at f=135-175MHz,Vdd=7.2V	Original	AN-VHF-034-B RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/17meter) RD12MVS1 2040D	PDF
RD12MVP1 Abstract: RD12MVS1 mitsubishi 5218 5253 1007 Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034-A Date : 10th Feb. 2006 Rev.date : 7th Jan. 2010 Prepared: E.Akiyama S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: RD12MVP1 135-175MHz RF characteristics data	Original	AN-VHF-034-A RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1 mitsubishi 5218 5253 1007	PDF
RD100HHF1 Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V	Original	30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1	PDF
RD12MVP1 Abstract: RD12MVS1 Contextual Info: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document No. AN-VHF-034 Date: 10th Feb. 2006 Prepared: E.Akiyama S.Kametani Confirmed: SUBJECT: T.Ohkawa RD12MVP1 135-175MHz RF characteristics data SUMMARY: This application note shows the RF characteristics Frequency Characteristics, Pin vs. Pout	Original	AN-VHF-034 RD12MVP1 135-175MHz RD12MVP1: 059XA-G" 175MHz: 135/155/175MHz: RD12MVS1	PDF