TRANSISTOR 12V 8A Search Results

Contextual Info: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A

Contextual Info: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -12V • IC = -4A Continuous Collector Current • Low Saturation Voltage -140mV max @ -1A

MLP322

Abstract: ZXT1M322 ZXT1M322TA ZXT1M322TC
Contextual Info: ZXT1M322 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 2mm x 2mm MLP Micro Leaded Package outline, this new 4th generation low saturation transistor offers extremely low on state

marking 8A sot223

Abstract: sot223 transistor pinout transistor pnp 12V 1A Continuous Current Peak FZT717 FZT717TA 12v pnp transistor zetex 320
Contextual Info: FZT717 SOT223 PNP medium power transistor Summary BVCEO = -12V; IC = 3A Description Packaged in the SOT223 outline this low saturation 12V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions.

DFN3020B-8

Abstract: ZXTPS717MC DS3193
Contextual Info: A Product Line of Diodes Incorporated ZXTPS717MC 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -12V • RSAT = 65mΩ

MLP832

Abstract: ZX3CD1S1M832 ZX3CD1S1M832TA ZX3CD1S1M832TC
Contextual Info: ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTD717MC ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package

Contextual Info: OBSOLETE - PLEASE USE ZXTD717MC ZXTD1M832 MPPS Miniature Package Power Solutions DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -12V; RSAT = 60m ; IC= -4A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP Micro Leaded Package outline, these new 4th generation low saturation dual transistors offer

ZXTD717MC

Abstract: DFN3020B-8 ZXTD717MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTD717MC DUAL 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • • • • • VCEO = -12V RSAT = 60 mΩ IC = -4A Continuous Collector Current Low Equivalent On Resistance

Contextual Info: A Product Line of Diodes Incorporated ZXTP717MA 12V PNP LOW SATURATION SWITCHING TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > -12V IC = -4A Continuous Collector Current Low Saturation Voltage -140mV max @ -1A

FMMT717

Abstract: FMMT717QTA transistor marking 72m MARKING CODE 717
Contextual Info: A Product Line of Diodes Incorporated FMMT717 12V PNP SILICON POWER SWITCHING TRANSISTOR IN SOT23 PACKAGE Features Mechanical Data • • • • • • • • • • • • • • • • 625mW Power dissipation -2.5A Continuous collector current

AO6404

Abstract: AO6404L
Contextual Info: AO6404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6404 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

AON5802

Abstract: AON5802L AON5800
Contextual Info: AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is

Contextual Info: ACE8212B Common Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Description The ACE8212B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is

AON5800

Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

ao6408

Abstract: AO6408L IF88A
Contextual Info: AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for

Contextual Info: AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This

Contextual Info: ACE8628B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE8628B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is

Contextual Info: ACE8202B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE8202B uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 2.5V to 12V. It is ESD protected. This device is

Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

AO4806

Abstract: AO4806L SOIC-8s2
Contextual Info: AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4806 uses advanced trench technology to provide excellent RDS ON and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for

AO6408

Contextual Info: March 2003 AO6408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO6408 uses advanced trench technology to provide excellent RDS ON and low gate charge. It offers operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for

Contextual Info: Advanced Monolithic Systems AMS1508 8A LOW DROPOUT VOLTAGE REGULATORS RoHS compliant FEATURES APPLICATIONS • Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V • Output Current of 10A • Low Dropout, 500mV at 10A Output Current • Fast Transient Response