AON5810 Search Results

Contextual Info: AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This

AON5810

Abstract: diode 77a AON5810L
Contextual Info: AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This

Contextual Info: AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5810 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected.

AON6704L

Abstract: AOZ1094 AOZ1094AI AON7403 AOZ1242 AOZ1014AI AOZ1212AI AOZ1361 AON6414AL Aoz1025
Contextual Info: Selector Guide Q4 2009 United states CALIFORNIA 495 Mercury Drive Sunnyvale, CA 94085 Phone: +1 408 830-9742 Fax: +1 (408) 830-9749 TEXAS 4845 Briar Creek Dr. Flower Mound, TX 75028 Phone: +1 (972) 691-1085 Fax: +1 (972) 691-1086 CHINA Rm F, 24/F Shenzhen Special Zone Press Tower

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

package

Abstract: AON5812 AON5810 alpha solder paste PROFILE
Contextual Info: Document No. DSMT-0002 Rev. 1 Page: 1/1 PCB Land Design and Surface Mount for DFN2x5 Punched Package Introduction DFN package is a plastic encapsulated package with a copper lead frame substrate. It offers near chip scale footprint, thin profile, low weight and good thermal and electrical performance.