AON5800L Search Results
AON5800L Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON5800 AON5800 AON5800L AON5800L | |
AON5800Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON5800 AON5800 AON5800L AON5800L | |
AON5800Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON5800 AON5800 AON5800L |