AON5800 Search Results
AON5800 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
AON5800 | Alpha & Omega Semiconductor | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor | Original | 131.62KB | 4 |
AON5800 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON5800 AON5800 AON5800L AON5800L | |
AON5802
Abstract: AON5802L AON5800
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Original |
AON5802 AON5800 AON5802 AON5802L | |
AON5800Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON5800 AON5800 AON5800L AON5800L | |
AON5800Contextual Info: AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. |
Original |
AON5800 AON5800 AON5800L |