12N60FI
Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
Contextual Info: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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sth12n60sth12n60fiisowatt21812n60+812v60/12n60fi12n60ftransistor 12n60st 12n6012n-60f12n60 dcgs 069 7.2 24 v
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RX12N60
Abstract: 12N60
Contextual Info: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX12N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893
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rx12n60tel086-28-85198496fax086-28-851989312n60+1o-220ab
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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isoplus247tmplus247tm-packagefbo16-08nfbe22-06n1+1421-05qc22-08n75-01f21-08i01transistor 12n60c12n60c equivalent30n120d113n50 equivalent12n60cmosfet 1200v 30amosfet 1000v 30a30n120dcs20-22mof112n60c mosfet
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12n60d1c
Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
Contextual Info: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V
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m3022710qsd25dhgtb12n60d1c100ns+10m3d2b71d05qss312n60d1c12n60d1equivalent 12n60d1chgtb12n60d1c equivalentbt 33c12n60harris semiconductor to220 power transistorequivalent+12n60d1c
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12n60d1c
Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
Contextual Info: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω
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hgtb12n60d1c100ns100octs-001aa+10o-220icl766712n60d1c12n60d1600v current sensing n-channel igbtequivalent 12n60d1c10a 600v mos12a, 600v current sensing n-channel igbthgtb12n60d1c equivalentts-001aa package
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12n60d1
Abstract: 12n60d1c 600V Current Sensing N-Channel IGBT equivalent 12n60d1c HGTB12N60D1C 12n60d
Contextual Info: HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT Package Features • 12A, 600V JE D E C T S -001A A 5 LEAD TO -220 • r • Low VCe(SAT) at 25 A . 2.5V (Typ)
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hgtb12n60d1c100ns-001a12n60d1+412n60d1c600v current sensing n-channel igbtequivalent 12n60d1c12n60d
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12n60c3
Abstract: 12n60c3d TA49182 TA49188 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 IGBT 12n60c3D
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS interrii J a n u a ry . m D ata S h eet 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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hgtp12n60c3dhgt1s12n60c3dsta49123ta49188+7ta4918ration12n60c312n60c3dta49182ta4918hgt1s12n60c3ds9aigbt 12n60c3d
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12n60c3d
Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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hgtp12n60c3dhgt1s12n60c3ds150octa49123+6ta49188210ns12n60c3dta49182ta4918hgt1s12n60c3ds9a
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12n60b3d
Abstract: 12N60B3 Zener Diode LT 432 12N60 TA49188 HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS in t e r r ii J a n u a ry . Data Sheet 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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12n60b3dhgt1s12n60b3dsta49171ta49188+712n60b3zener diode lt 43212n60hgt1s12n60b3ds9ahgtg12n60b3dhgtp12n60b3dtb334
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12n60c3d
Abstract: IGBT 12n60c3D HGT1S12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182 TA49188 12n60c3
Contextual Info: HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS S E M I C O N D U C T O R 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes January 1997 Features Description • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices
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hgtp12n60c3dhgt1s12n60c3dhgt1s12n60c3ds150oc+9ta49123ta49188210ns1-800-4-harris12n60c3digbt 12n60c3dhgt1s12n60c3ds9ata4918212n60c3
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12n60b3d
Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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hgtg12n60b3dhgtp12n60b3dhgt1s12n60b3ds150oc+5ta49171ta4918812n60b3dhgt1s12n60b3ds9atb334
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12n60b3d
Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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hgtg12n60b3dhgtp12n60b3dhgt1s12n60b3ds150oc+5ta49171ta4918812n60b3dhgt1s12n60b3ds9atb334
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TA49188
Abstract: 12N60C3D HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49182
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar
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hgtp12n60c3dhgt1s12n60c3ds150octa49123+5ta49188210ns12n60c3dhgt1s12n60c3ds9ata49182
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12n60c
Abstract: 12n60c3d TA49182 12N60C3 TA49123 TA49188 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D 12N60
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a
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hgtp12n60c3dhgt1s12n60c3ds150octa49123+8ta49188210ns12n60c12n60c3dta4918212n60c3hgt1s12n60c3ds9a12n60
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12N60A4D
Abstract: IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 HGTP12N60A4D TA49335 HGT1S12N60A4DS HGT1S12N60A4DS9A HGTG12N60A4D
Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and
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hgtg12n60a4dhgtp12n60a4dhgt1s12n60a4ds150oc+7ta49335ta4937112n60a4digbt 12n60a4dg12n60a4d12n60a4hgt1s12n60a4ds9a
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12n60a4
Abstract: 12n60a4 pdf datasheet IGBT 12n60a4 HGT1S12N60A4S G12N60A4 HGT1S12N60A4S9A C110 HGTG12N60A4 HGTP12N60A4 TA49335
Contextual Info: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet November 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtp12n60a4hgtg12n60a4hgt1s12n60a4s150oc+8100khz12n60a412n60a4 pdf datasheetigbt 12n60a4g12n60a4hgt1s12n60a4s9ac110ta49335
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IGBT 12n60a4D
Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337
Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and
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hgtg12n60a4dhgtp12n60a4dhgt1s12n60a4ds150oc+7ta49335ta49371igbt 12n60a4d12n60a4d12n60a4d transistorhgtg*n60a4dta49337
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12n60a4
Abstract: IGBT 12n60a4 HGT1S12N60A4S HGTG12N60A4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334
Contextual Info: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtp12n60a4hgtg12n60a4hgt1s12n60a4s150oc+8100khz12n60a4igbt 12n60a412n60ahgt1s12n60a4s9ac110ta49335tb334
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12n60c3d
Abstract: IGBT 12n60c3D
Contextual Info: u A Q Q ie HGTP12N60C3D, HGT1S12N60C3D, HGT1S12N60C3DS 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Description • 24A, 600V at T c = 25°C This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transis
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hgtp12n60c3dhgt1s12n60c3dhgt1s12n60c3dsta49123+4ta49188o-263ab12n60c3digbt 12n60c3d
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12N60A4
Abstract: IGBT 12n60a4 C110 HGT1S12N60A4S HGT1S12N60A4S9A HGTG12N60A4 HGTP12N60A4 TA49335 TB334 HGTG12N60A4 equivalent
Contextual Info: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S Data Sheet August 2002 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtp12n60a4hgtg12n60a4hgt1s12n60a4s150oc+8100khz12n60a4igbt 12n60a4c110hgt1s12n60a4s9ata49335tb334hgtg12n60a4 equivalent
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12N60A4D TRANSISTOR
Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and
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hgtg12n60a4dhgtp12n60a4dhgt1s12n60a4ds150oc+3ta49335ta4937112n60a4d transistor
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12n60a4
Abstract: IGBT 12n60a4 12n60a4 pdf datasheet HGT1S12N60A4S9A HGTG12N60A4 HGTG12N60A4 equivalent 12n60a C110 HGTP12N60A4 LD26
Contextual Info: HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input
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hgtp12n60a4hgtg12n60a4hgt1s12n60a4s9a150oc+8100khz12n60a4igbt 12n60a412n60a4 pdf datasheethgtg12n60a4 equivalent12n60ac110ld26
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TA49171
Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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hgtg12n60b3dhgtp12n60b3dhgt1s12n60b3ds150oc+3ta49171ta49188igbt junction temperature calculation
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2n60c3
Abstract: 12n60c3d 2n60c 2N60C3D TA49182 IGBT 12n60c3D transistor TE 901 equivalent 12n60c 2n60 TO-262AA equivalent
Contextual Info: l j A D D HGTP12N60C3D, h g t i s i 2N60C3D, HGT1S12N60C3DS I S 24A , 600V, U F S S e r i e s N - C h a n n e l I G B T with An ti -Parai I el H y p erfa st Di o d es January 1997 Features Description • 24A, 600V at Tc = 25 °C This family of MOS gated high voltage switching devices
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hgtp12n60c3d2n60c3dhgt1s12n60c3dsta49123+10ta491882n60c312n60c3d2n60cta49182igbt 12n60c3dtransistor te 901 equivalent12n60c2n60to-262aa equivalent
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