EM- 546 motor
Abstract: 2N6545 2N6545 Motorola 2N6544
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3b72S4 QQflMbbt Ö | T - S 3 - /3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r s D a ta , S lie e t 8 AM PERE NPN SILICON POWER TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The 2N6545 transistor is designed for high-voltage, high-speed,
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b3b72s42n6545em- 546 motor2n6545 motorola+12n6544
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SL362C
Abstract: 362C plessey SL360 High Speed Switches SL360G
Contextual Info: PLESSEY SEMICONDUCTORS 12E 1 7ESG513 0GQ773tl ?| SL360G & SL362C HIGH PERFORMANCE NPN DUAL TRANSISTOR ARRAYS The SL360G and SL362C are high performance NPN dual transistor arrays fabricated as monolithic silicon devices. They feature accurate parameter matching and close
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7esg5130gq773tlsl360gsl362c+560mhzsl360362cplessey sl360high speed switches
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BUV 12
Abstract: buv12
Contextual Info: MGTORCLA SC X S T R S /R F 12E O I b3b?554 OQflMflat 0 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 20 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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buv 12buv12 |
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BF180
Abstract: s21b BF180 TRANSISTOR s parametres s22b bf 180 CE 470 10V J BF180 MAX S21B est 504
Contextual Info: * B F 180 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN S ILIC IU M , PLAN A R % Preferred device D is p o s itif recom m andé The NPN planar transistor BF 180 is intended for use in UHF amplifier stages of T V receivers AGC controlled stages . Le transistor planar NPN BF 180 est destiné à être u ti
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bf180s21bbf180 transistors parametres+6s22bbf 180ce 470 10vj bf180max s21best 504
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2N4233
Contextual Info: MOTOROLA SC XSTRS/R F 12E D | b3t.7B5M 000450^ 3 | 7^33- MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 2N4233A MEDIUM-POWER SILICON TRANSISTOR . . . designed for general-purpose pow er amplifier and switching applications, 5.0 AMPERE SILICON POWER TRANSISTOR
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2n4233a2n4233 |
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sm 0038
Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.
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b3b72s420atlcbdy58an415a+6sm 0038k 1113transistor 126buv10ntransistor 12etransistor 1b
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BF115
Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
Contextual Info: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti
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-c12e-v12ecc----c22ebf115+9bf 145 transistortransistor bf 175transistor bf 910transistor 115thomson tunersc22etransistor cd 910oscillateurv12ec
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transistor k 425
Abstract: sc 107 transistor npn, transistor, sc 107 b BU522 transistor transistor 0190 C107M BU522 BU522B 221A-04 BU522A
Contextual Info: MOTOROLA SC XSTRS/R F 12E I b3b75SM Q0fl4fl22 7 | BU522 BU522A BU522B MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH V O LTA G E SILICON POWER DARLINGTO NS 7 AMPERES Power Transistor mainly intended for use as ignition circuit output transistor. DARLINGTON T R IPLE D IFFU SED
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r-33-73bu522bu522abu522b+7transistor k 425sc 107 transistornpn, transistor, sc 107 bbu522 transistortransistor 0190c107m221a-04
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DM 0265 R
Abstract: mpsu60 transistor 4317 MPS-U60 SS11 R4317 4317 transistor LF625 MPSU60 transistor
Contextual Info: MOTOROLA SC 12E 0 I fci3fci755M 0QÖSS11 b | XSTRS/R F r-4 3 -17 MOTOROLA SEMICONDUCTOR MPS-U60 TECHNICAL DATA & CON ANNULAR TRANSISTOR PNP SILICON HIGH VOLTAGE TRANSISTOR fo r general-purpose app lication s requiring high breakItages, low saturation voltages and low capacitan ce.
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r-43-17mps-u60dm 0265 rmpsu60+6transistor 4317ss11r43174317 transistorlf625mpsu60 transistor
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Siemens 1736
Abstract: 2sc 1740 TRANSISTOR equivalent QS 100 NPN Transistor 101S BCY66 Q60203-Y66 10-lmA Scans-00145246 Q004312
Contextual Info: 2SC D m ISIEG 023SbQS Q0Q4312 ì NPN Silicon Planar Transistor SIEMENS AKTIEN6ESELLSCHAF BCY66 $12 BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for
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0235bg5q004312bcy66q60203-y66+10tcases45fi23sb05q0qm31120hzsiemens 17362sc 1740 transistor equivalentqs 100 npn transistor101s10-lmascans-00145246
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transistor T K 2056
Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage
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ss2sc4271t0126300ma100ma+6ss2sc42721s-126ais-20matransistor t k 2056k 2056 transistortransistor k 2056
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j139
Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Contextual Info: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
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bd179bd180q0fi4713o-22saa+5j1390395 adc3268127 d transistorh127
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K 3264 transistor
Abstract: BD 266 S K 3264 transistor technical data transistor Bd 575 TRANSISTOR BD 168 10 watt power transistor bd BD 266 A transistor BD 139 K1461 BD 140 transistor
Contextual Info: MOTOROLA SC 12E D § b3b7554 0aôM7Q1 Q | XSTRS/R F T-^-Oß MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC M ED IU M POWER SILICON NPN TRANSISTOR 1.5 AMPERE POWER TRANSISTOR . . . designed fo r use as audio amplifiers and drivers utilizing com plem entary o r quasi com plementary circuits.
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b3b7254an-4151k 3264 transistorbd 266 s+8k 3264 transistor technical datatransistor bd 575transistor bd 16810 watt power transistor bdbd 266 atransistor bd 139k1461bd 140 transistor
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transistor BD 522
Abstract: bd800 bd802 TRANSISTOR BD 168 BD798 transistor L33 L33 TRANSISTOR BD79 BD800 MOTOROLA transistor BD 800
Contextual Info: MOTORCLA SC XSTRS/R 12E F D I b3fcj72SM MOTOROLA Qüfl MTST " M | BD796 BD798 SEMICONDUCTOR TECHNICAL DATA BÒ800 BD8Û2 PLASTIC HIGH POWER SILICON PNP TRANSISTOR 8 AMPERE POWER TRANSISTOR . designed for use up to 3 0 W att audio amplifiers utilizing complementary or quasi complementary circuits.
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b3fcj72smbd796bd798bd800+8bd802transistor bd 522transistor bd 168transistor l33l33 transistorbd79bd800 motorolatransistor bd 800
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k 319
Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
Contextual Info: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar
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bfs5562702-f272p21e--k 319+3q62702-f272a 798 transistortransistor h 802
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BFX89
Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23shqsq62702-f2962js41wbfx89+4transistor bfx 90bfx 514q 371 transistor2sc 684
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mj6503 motorola
Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Contextual Info: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,
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mj6503mj6503 motorolamj6503 transistormj6502+2mark b3lmj-6503
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transistor k 316
Abstract: k 1 transistor BFS20 Q62702-F350 Planar RF Transistor TRANSISTOR BO sot 23 x 316
Contextual Info: BFS 20 NPN Silicon planar RF transistor BFS 20 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , designed for use in film circuits. The transistor is marked: NA 0 .T -D .0 1 6 T ype Code O rd e r n u m b e r
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bfs20ot-23q62702-f35000k/w+5transistor k 316k 1 transistorplanar rf transistortransistor bosot 23 x 316
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sem 2106
Abstract: bux13
Contextual Info: I MOTORGLA SC X S T R S /R 12E D F I k 3 b7 2 S4 0 0 0 4 =52*1 3 | MOTOROLA SEM ICO N DUCTO R BUX13 TECHNICAL DATA 15 AMPERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high speed, high voltage, high power applications.
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bux13an415asem 2106 |
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IR 92 0151
Abstract: MJ12002 MJ-12002 TC204A 4229PL00-3C8
Contextual Info: MOTORCLA SC XSTRS/R F 12E D | fc.3t.72SM GGflSQflfi T f T-J3-/J MOTOROLA SEMICONDUCTOR MJ12002 TECHNICAL DATA D e s ig n e rs D a ta S h e e t 2.5 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR 1500 VOLTS 76 WATTS . . . specifically designed for use in large screen color deflection
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mj1200214-maximumir 92 0151mj-12002+2tc204a4229pl00-3c8
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Contextual Info: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,
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b3b72s4mj10014 |
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23sbos0g04737bfx55q60206-x55+9fl235bos3004xtransistor bfx 59634 transistorbfx 6363310-ad-10transistor bfx 90bfx 79
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ms 7254 ver 1.1
Abstract: ms 7254 ver 3.0 T557
Contextual Info: MOTOR O L A SC I 12E D I L3b75S4 QOflSMll 2 XSTRS/R F I 7 " -3 3 7 3 MOTOROLA SEMICONDUCTOR MJE13070 TECHNICAL DATA D e s i g n e r ’s D a t a S h e e t 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR 400 VOLTS 80 WATTS
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l3b75s4mje13070ms 7254 ver 1.1ms 7254 ver 3.0+1t557
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transistor ESM 30
Abstract: ESM269
Contextual Info: ESM 269 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L PRELIM IN A R Y DATA N O T I C E P R E L IM I N A I R E ESM 269 is a very tow noise VHF transistor. It features low intermo dulation distorsion V CBO
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transistor esm 30esm269 |
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