TRANSISTOR 1221 Search Results

k 246 transistor fet

Abstract: subthreshold logic
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level f ield-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

Contextual Info: Afa Avionics Pulsed Power Transistor PH 1090-80L Preliminary 80 Watts, 1030-1090 MHz, 250 us Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

transistor 1005 oj

Abstract: transistor power rating 5w ATC100A PH3135-5S PIN07
Contextual Info: M tiK O V . J r an A M P com pany Radar Pulsed Power Transistor, 5W, 2^s Pulse, 10% Duty 3.1 - 3.5 GHz PH3135-5S V2.00 . .900 Features • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation • High Efficiency Interdigitated Geometry

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

transistor ITT 2907

Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Contextual Info: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz

Contextual Info: TO SH IBA RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS

toshiba ta 1222

Abstract: TRANSISTOR 1221 RN1223
Contextual Info: T O SH IB A RN 1221, RN 1222, RN 1223, RN 1224, RN 122 5, RN 1226, RN 1227 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1221, RN1222, RN1223, RN1224 RN1225, RN1226, RN1227 Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSB906 LOW FREQUENCY POWER AMPLIFIER • Low C ollecto r E m itter Saturation Voltage • C om plem ent to KSD 1221 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage Characteristic VcBO Sym bol - 60 V C ollecto r E m itter Voltage

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

2sd1395

Contextual Info: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]

2SD1395

Contextual Info: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]

Contextual Info: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]

Contextual Info: Ordering number:EN1221C NPN Triple Diffused Planar Silicon Darlington Transistor 2SD1395 Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2010C [2SD1395]

RJJ0319DSP

Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
Contextual Info: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: ON Semiconductort MPS4124 Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCE 25 Vdc Collector −Base Voltage VCB 30 Vdc Emitter −Base Voltage VEB 5.0 Vdc Collector Current — Continuous IC 200 mAdc

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

700B

Abstract: AN1294 J-STD-020B PD57018-E PD57018S-E PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF

Contextual Info: PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF

Contextual Info: Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE sat PNP TO-3P-3L http://onsemi.com Features • • • Large current capacitance Wide SOA and high durability against breakdown Adoption of MBIT process Specifications Absolute Maximum Ratings at Ta=25°C

PD57018S-E

Abstract: 700B AN1294 J-STD-020B PD57018 PD57018-E PD57018S PD57018STR-E PD57018TR-E
Contextual Info: PD57018-E PD57018S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 18 W with 16.5dB gain@945 MHz/28 V ■ New RF plastic package PowerSO-10RF

transistor bf 193

Abstract: Siemens ESP 100
Contextual Info: SIEMENS BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fr = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

2SC3544

Abstract: IC sn 74 ls 2000
Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LO W COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and m ixer applications. It is suitable for autom otive keyless entry