TRANSISTOR 12 GHZ Search Results

Radar

Abstract: PH1214-12M radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz PH1214-12M PH1214-12M Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration

b 595 transistor

Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor

TRANSISTOR GENERAL DIGITAL L6

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

transistor DATA REFERENCE handbook

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a

55LT

Contextual Info: 1014 - 12 12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz GENERAL DESCRIPTION CASE OUTLINE The 1014-12 is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1000-1400 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes

20191 ic

Contextual Info: e PTB 20191 12 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20191 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

pseudomorphic HEMT

Abstract: CF003-03 Hemt transistor
Contextual Info: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,

Contextual Info: ERICSSON í PTB 20191 12 Watts, 1 . 7 8 - 1 . 9 2 GHz RF P o wer Transistor Description The 20191 is a class AB, N PN, common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. It is rated at 12 watts CW minimum output power, or 15 watts (PEP) output power.

Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to

JMC5701

Abstract: GPS-101-2
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold

JMC5701

Abstract: Y 335
Contextual Info: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold

1819AB12

Contextual Info: 1819AB12 12 Watts, 25 Volts, Class AB Personal 1808 - 1880 MHz GENERAL DESCRIPTION CASE OUTLINE The 1819AB12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class AB, RF output power over the band 1808-1880 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

10AM12

Abstract: COB1
Contextual Info: 10AM12 12 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10AM12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes

1920AB12

Contextual Info: 1920AB12 12 Watts, 25 Volts, Class AB Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920AB12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class AB, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

omni spectra sma

Abstract: transistor n03 PH2856
Contextual Info: Linear Accelerator Pulsed Power Transistor PH2856-3 3 Watts, 2.856 GHz, 12 is Pulse, 10% Duty Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

MP4T243

Abstract: Bipolar Transistor ma4t24335 Transistor 35 MICRO-X MP4T24300 MP4T24335 S21E S22E Silicon Bipolar Transistor MICRO-X low noise transistors microwave
Contextual Info: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors MP4T243 Series V3.00 Features •Low Phase Noise Oscillator Transistor •200 mW Driv er Amplifier Transistor •Operation to 8 GHz •Av ailable as Chip •Av ailable in Hermetic Surface Mount Packages

NEC JAPAN 237 521 02

Abstract: 3563 1231 2SC5014 2SC5015 2SC5015-T1 2SC5015-T2 t83 230 02 TD-7938
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. 2.1 ± 0.2 PART

microwave amplifier 2.4 ghz 10 watts

Abstract: amplifier TRANSISTOR 12 GHZ 2324-12L
Contextual Info: 2324-12L 12 Watts - 20 Volts, Class C Microwave 2300 - 2400 MHz GENERAL DESCRIPTION The 2324-12L is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 2300-2400 MHz. This transistor is specifically designed for Microwave Broadband Class C amplifier

2124-12L

Contextual Info: R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes

NEC IC D 553 C

Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low current consumption and high gain Units : mm i S 2ie 12 = 12 dB T Y P . @ Vce = 2 V, lc = 7 mA, f = 2 G H z

2124-12L

Contextual Info: R.A.041400 2124-12L 12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz GENERAL DESCRIPTION CASE OUTLINE 55AW Style 1 COMMON BASE The 2124-12L is a Common Base transistor capable of providing 12 Watts Class C, RF Output Power over the band 2200-2400 MHz, The transistor includes

1920A12

Contextual Info: 1920A12 12 Watts PEP, 25 Volts, Class A 10 dB Gain Personal 1930 - 1990 MHz GENERAL DESCRIPTION CASE OUTLINE The 1920A12 is a COMMON EMITTER transistor capable of providing 12 Watts of Class A, RF output power over the band 1930-1990 MHz. This transistor is specifically designed for PERSONAL COMMUNICATIONS

1417 transistor

Abstract: transistor 1417 microwave amplifier 2.4 ghz 10 watts c 1417 1417-12A 2.4 ghZ rf transistor amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1 WATT POWER TRANSISTOR 1 WATT 2.4 GHZ 1417 ic
Contextual Info: 1417 - 12A 12 Watt - 28 Volts, Class C Microwave 1400 - 1700 MHz GENERAL DESCRIPTION CASE OUTLINE The 1417-12A is a COMMON BASE transistor capable of providing 12 Watts of Class C, RF output power over the band 1400-1700 MHz. This transistor is designed for Microwave Broadband Class C amplifier