MSB00 Search Results

PMV213SN

Abstract: PMV213
Contextual Info: PMV213SN µTrenchMOS standard level FET Rev. 02 — 19 February 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV213SN in SOT23.

sot23 marking V2p

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BFQ67 NPN 8 GHz wideband transistor Product specification Supersedes data of September 1995 1998 Aug 27 NXP Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67 FEATURES DESCRIPTION

marking code ASY

Abstract: MAS7838 MAS9138 MAS9138N MAS9138S TDI timing Crystal Oscillator TXC
Contextual Info: DA9138.003 29 January, 2001 MAS9138 ASYNCHRONOUS TO SYNCHRONOUS CONVERTER • Pin compatible with MAS7838 • Interfaces a duplex asynchronous to synchronous channel • Modem speeds of 600, 1.2k, 2.4k, 4.8k, 7.2k, 9.6k, 12k, 14.4k, 19.2k and 38.4k bps with a single 4.9152 MHz crystal

op277

Abstract: OP-277 opamp 358 AD8610 LT1793 MAS9116 MC33078 OP1177 OP275
Contextual Info: DA9116.005 22 November, 2005 MAS9116 Stereo Digital Volume Control Signal Voltage up to ± 18V Two Independent Channels Use of Differential DACs Possible Serial Control Registers • • • • DESCRIPTION MAS9116 is a stereo volume control for audio systems, which require high output voltages AC3 .

atc 17-33

Abstract: class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION

BLV91

Abstract: ferroxcube 1988 mda406 MDA401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV91/SL UHF power transistor Product specification September 1988 Philips Semiconductors Product specification UHF power transistor BLV91/SL DESCRIPTION FEATURES NPN silicon planar epitaxial transistor designed for use in

TRANSISTOR CATALOGUE

Abstract: BLF547 MRB027 2E1P c17 dual mos L24C16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF547 PIN CONFIGURATION • High power gain • Easy power control

BST82

Abstract: SMD TRANSISTOR MARKING BR BST82 TRANSISTOR Q 817 smd 4814 transistor smd marking dk smd transistor marking A1 SMD TRANSISTOR MARKING DE MSB003 02p SMD TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BST82 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

philips if catv amplifier

Abstract: BGY66B BP317 DIN45004B SC16 philips application catv
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY66B CATV amplifier module Preliminary specification File under Discrete Semiconductors, SC16 Philips Semiconductors September 1994 Philips Semiconductors Preliminary specification CATV amplifier module BGY66B PINNING - SOT115C

BSH111

Abstract: MSB003
Contextual Info: BSH111 N-channel enhancement mode field-effect transistor Rev. 01 — 07 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH111 in SOT23.

BUK98150-55A

Abstract: ID16 SC-73
Contextual Info: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

MBB691

Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Mar 06 Philips Semiconductors Product specification

PHT4NQ10T

Abstract: SC-73 09581
Contextual Info: PHT4NQ10T TrenchMOS standard level FET M3D087 Rev. 02 — 2 May 2002 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHT4NQ10T in SOT223. 2. Features

buk987

Abstract: BUK9875-100A SC-73
Contextual Info: BUK9875-100A TrenchMOS logic level FET Rev. 01 — 30 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BSH111 N-channel enhancement mode field-effect transistor Rev. 02 — 26 April 2002 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability: BSH111 in SOT23.

PMV117

Abstract: PMV117EN
Contextual Info: PMV117EN µTrenchMOS enhanced logic level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology Product availability: PMV117EN in SOT23.

BFR540

Abstract: MSB003 BFR540 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR540 The transistor is encapsulated in a

BFG198

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a

GS 78L05 N

Contextual Info: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures

Contextual Info: bb53R31 0 0 3 2 3 5 3 bfll M AP X Philips Sem iconductors Product specification CATV amplifier module BGY67 N APER PHILIPS/DISCRETE PINNING-SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: bbSBTBl DDBEMBS bTfl Philips Semiconductors APX Preliminary specification CATV amplifier module ^ BGY885A N AMER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

Contextual Info: PMV56XN µTrenchMOS extremely low level FET Rev. 01 — 26 February 2003 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMV56XN in SOT23. 2. Features

Contextual Info: Philips Semiconductors • b b 5 3 T 31 0032405 f lD T | A p ^ P r a d u c ts p e c if ic ^ CATV amplifier module BGY681 N AUER PHILIPS/DISCRETE FEATURES PINNING - SOT115C PIN CONFIGURATION DESCRIPTION PIN » Excellent linearity • Extremely low noise

Contextual Info: Philips Sem iconductors bbSBTBl DQ3S3S1 071 • APX Product specification CATV amplifier module BGD508 N AMER PHILIPS/DISCRETE PINNING -SOT115C. FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation