TRANSISTOR 11N60C3 Search Results

TRANSISTOR 11N60C3 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR 11N60C3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
11N60C3 Abstract: 11N60C SPP11N60C3 transistor 11n60c3 AR1010 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 11N60C3 11N60C transistor 11n60c3 AR1010	PDF
11N60C3 Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3	PDF
Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω •=Periodic avalanche rated ID	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3	PDF
11N60C3 Abstract: transistor 11n60c3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3	PDF
11N60C3 Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3	PDF
Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V Ultra low gate charge	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1	PDF
11N60C3 Abstract: 11N60C SPW11N60C3 AR1010 Contextual Info: SPW11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C SPW11N60C3 AR1010	PDF
Q67040-S4408 Abstract: 11N60C AR1010 Contextual Info: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated	Original	SPA11N60C3 P-TO220-3-31 11N60C3 P-TO220-3-31 Q67040-S4408 Q67040-S4408 11N60C AR1010	PDF
SPA11N60C3 Abstract: SPA11N60C3 application note Q67040-S4408 11N60C3 AN-TO220-3-31-01 GPT09301 SDP06S60 Contextual Info: SPA11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	SPA11N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4408 11N60C3 SPA11N60C3 SPA11N60C3 application note Q67040-S4408 11N60C3 AN-TO220-3-31-01 GPT09301 SDP06S60	PDF
11n60c3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP • Periodic avalanche rated PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3	PDF
11n60c3 Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C Contextual Info: SPW11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C	PDF
11n60c3 Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3	PDF
11n60c3 Abstract: 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPA11N60C3 SPD06S60 transistor 11n60c3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 11N60C SPA11N60C3 equivalent SPA11N60C3E8185 11N60 E8185 SPP11N60C3 SPD06S60 transistor 11n60c3	PDF
11n60c3 Abstract: SPA11N60C3E8185 11N60C SPA11N60C3 equivalent SPA11N60C3 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3 Contextual Info: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220	Original	SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 PG-TO220FP PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31 11n60c3 SPA11N60C3E8185 11N60C SPA11N60C3 equivalent 11N60 SPI11N60C3 transistor 11n60c3 Q67040-S4395 SPP11N60C3	PDF

Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability	Original	SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3	PDF
11n60c3 Abstract: 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60 Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability	Original	SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3 11gerous 11n60c3 11N60C SPB11N60C3 Q67040-S4396 SPD06S60 SPP11N60C3 4016A 11N60	PDF
Contextual Info: SPB11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPB11N60C3 PG-TO263 Q67040-S4396 11N60C3	PDF
Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO263 • Extreme dv/dt rated • High peak current capability	Original	SPB11N60C3 PG-TO263 SPB11N60C3 Q67040-S4396 11N60C3	PDF
11N60C3 Abstract: 11N60C AR1010 Contextual Info: SPW11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11N60C3 11N60C AR1010	PDF
11n60c3 Abstract: transistor 11n60c3 Q67040-S4395 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 Contextual Info: Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 Q67040-S4395 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3	PDF
11n60c3 Abstract: SPD06S60 SPW11N60C3 Contextual Info: SPW11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 SPD06S60 SPW11N60C3	PDF
Contextual Info: SPW11N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability	Original	SPW11N60C3 P-TO247 Q67040-S4418 11N60C3	PDF
Contextual Info: SPB11N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 • Extreme dv/dt rated • High peak current capability	Original	SPB11N60C3 P-TO263-3-2 SPB11N60C3 Q67040-S4396 11N60C3	PDF
11n60c3 Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60 Contextual Info: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60	PDF

TRANSISTOR 11N60C3 Search Results

TRANSISTOR 11N60C3 Result Highlights (5)

TRANSISTOR 11N60C3 Datasheets Context Search

11N60C3

11N60C3

11N60C3

11N60C3

11N60C3

Q67040-S4408

SPA11N60C3

11n60c3

11n60c3

11n60c3

11n60c3

11n60c3

11n60c3

11N60C3

11n60c3

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