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    TRANSISTOR 11N60C2 Search Results

    TRANSISTOR 11N60C2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    		Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR 11N60C2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11n60c2 equivalent

    Abstract: 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60
    Contextual Info: SPW11N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		spw11n60c2p-to247q67040-s431311n60c2+411n60c2 equivalent11n60clmossdp06s60 PDF

    68w Transistor smd

    Abstract: 11n60c2 transistor smd 68W marking code 68W 68w smd smd 68W transistor 68W SPP11N60C2 transistor 68W smd 11n60c2 equivalent
    Contextual Info: SPP11N60C2 SPB11N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature Product Summary • New revolutionary high voltage technology · Ultra low gate charge VDS 600 V · Periodic avalanche rated RDS on 0.38 W · Extreme dv/dt rated


    Original     		spp11n60c2spb11n60c2p-to263-3-2p-to220-3-1+11q67040-s429511n60c2q67040-s429868w transistor smdtransistor smd 68wmarking code 68w68w smdsmd 68wtransistor 68wtransistor 68w smd11n60c2 equivalent PDF

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Contextual Info: Preliminary data SPA11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		spa11n60c2p-to220-3-31q67040-s433211n60c2+4an-to220-3-31-0111n60cgpt09301sdp06s60 PDF

    11n60c2

    Abstract: transistor 11n60c2 spa 11n60c2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated ID • Extreme dv/dt rated


    Original     		spp11n60c2spb11n60c2spa11n60c2p-to220-3-31+5p-to263-3-2p-to220-3-111n60c2transistor 11n60c2spa 11n60c2 PDF

    11n60c2

    Abstract: 11n60c2 equivalent transistor 11n60c2 11n60c2* equivalents 11N60C spa 11n60c2 2002-08-12 11N6 SPB11N60C2 SPP11N60C2
    Contextual Info: Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge R DS on 0.38 Ω • Periodic avalanche rated ID 11 A • Extreme dv/dt rated


    Original     		spp11n60c2spb11n60c2spa11n60c2p-to220-3-31+11p-to263-3-2p-to220-3-1q67040-s429511n60c211n60c2 equivalenttransistor 11n60c211n60c2* equivalents11n60cspa 11n60c22002-08-1211n6 PDF

    11n60c2

    Abstract: SPW11N60C2 SDP06S60
    Contextual Info: SPW11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		spw11n60c2p-to247q67040-s431311n60c2+1sdp06s60 PDF

    11N60C

    Abstract: 11n60
    Contextual Info: SPW11N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances


    Original     		spw11n60c2p-to247q67040-s431311n60c2+211n60c11n60 PDF

    STR 6750

    Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
    Contextual Info: Version 1.1 , July 2000 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g 200W SMPS Demonstration Board


    Original     		an-coolmos-06tda16888room14j1room1101+10str 675011n60transistor smd r1dtransistor smd qp dk qpic 3525 pwm application dc to dc converter6 pin smd ic for smpssmd 3825 led4450 smd so-8smd mosfet drive 4450 8 pin200w power amplifier pcb layout PDF

    SMD MOSFET DRIVE 4450 8 PIN

    Abstract: A7 SMD TRANSISTOR transistor SMD R1D 6 PIN SMD IC FOR SMPS str 6750 smps power supply circuit 11N60 transistor SMD DK SMD a7 Transistor smd transistor A7 s 52 transistor SMD DK rc
    Contextual Info: Version 1.2 , November 2001 Application Note AN-CoolMOS-06 200W SMPS Demonstration Board Author: Marko Scherf, Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion        200W SMPS Demonstration Board


    Original     		an-coolmos-06tda16888room14j1room1101+10smd mosfet drive 4450 8 pina7 smd transistortransistor smd r1d6 pin smd ic for smpsstr 6750 smps power supply circuit11n60transistor smd dksmd a7 transistorsmd transistor a7 s 52transistor smd dk rc PDF