TRANSISTOR 10A 60V Search Results

transistor 2n3772

Abstract: 2N3772
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N3772 DESCRIPTION •Excellent Safe Operating Area ·High DC Current Gain-hFE=15 Min @IC = 10A ·Low Saturation Voltage: VCE(sat)= 1.4V(Max)@ IC = 10A APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and

2N6438

Contextual Info: 2N6438 Power Transistor Designed for use in industrial power amplifiers and switching circuit applications. Features: • High DC Current Gain. • hFE = 20 - 80 at IC = 10A = 12 Minimum at IC = 25A. • Low Collector-Emitter Saturation Voltage. VCE(sat) = 1.0V (Maximum) at IC = 10A, IB = 1.0A.

722 smd transistor

Abstract: transistor smd marking 94 FMMT722 TRANSISTOR SMD 1a 9 transistor smd br
Contextual Info: Transistors IC SMD Type Switching Transistor FMMT722 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 625mW power dissipation. 1 Excellent hfe characteristics up to 10A pulsed . 0.55 IC up to 10A peak pulse current. +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A.

25E03

Contextual Info: HIP2060 fü HARRIS S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001A A ALTERNATE VERSIO N HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V • rDS(QN) Max Per Transistor at VGS = 15V

12v class d amplifier 70W

Abstract: HIP2060AS1 HIP4080A HIP2060 HIP2060AS2 MO-169 AN8610 1350P
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array May 1997 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.135Ω Max Per Transistor at VGS = 15V

12v class d amplifier 70W

Abstract: HIP2060 HIP2060AS1 HIP2060AS2 HIP4080A MO-169 Transistor S1D
Contextual Info: HIP2060 S E M I C O N D U C T O R 60V, 10A Half Bridge Power MOSFET Array July 1996 Features Packages JEDEC TS-001AA ALTERNATE VERSION HIP2060 AS1 • Two 10A Power MOS N-Channel Transistors • Output Voltage to 60V 54 • rDS(ON) . . . . . .0.125Ω Max Per Transistor at VGS = 15V

BDV91

Abstract: transistor BDV95 BDV93 BDV95
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDV91/93/95 DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 45V(Min)- BDV91; 60V(Min)- BDV93 80V(Min)- BDV95 ·Complement to Type BDV92/94/96

BDV96

Abstract: BDV94 BDV91 BDV92
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BDV92/94/96 DESCRIPTION •Collector Current -IC= -10A ·Collector-Emitter Sustaining Voltage: VCEO SUS = -45V(Min)- BDV92; -60V(Min)- BDV94 -80V(Min)- BDV96 ·Complement to Type BDV91/93/95

NPN Transistor TO92 300ma

Abstract: npn 120v 10a transistor Silicon NPN Epitaxial Planar Type TSC5988 NPN Silicon Epitaxial Planar Transistor to92 60V transistor npn 2a POWER AND MEDIUM POWER TRANSISTOR
Contextual Info: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure

transistor E11

Abstract: NPN Transistor TO92 300ma POWER AND MEDIUM POWER TRANSISTOR
Contextual Info: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 Pin Definition: 1. Emitter 2. Base 3. Collector PRODUCT SUMMARY BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● Ordering Information Excellent gain characteristics specified up to 10A Part No. Structure

lf817

Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Contextual Info: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V

transistor BD245

Abstract: BD245C BD245 BD245A BD245 transistor BD245B BD246 EQUIVALENT NPN Transistor VCEO 80V 100V NPN Transistor 10A 70V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION •Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C

2SA1599

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1599 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -5A ·Large Current Capability-IC= -10A

Tenma

Abstract: pnp transistor 1000v philips AA Alkaline battery dimensions
Contextual Info: Model 72-8170 Analog Volt/Ohm Meter INSTRUCTION MANUAL Tenma Test Equipment www.tenma.com Controls and Functions 1 Zero calibration adjustment (2) Range selector (3) 10A input terminal (4) (+) probe input (5) (–) probe input (6) Transistor input terminals

FMMT491

Abstract: FMMT591 DSA003699
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591 TYPICAL CHARACTERISTICS 0.6 0.6 +25 ° C 0.5 0.5 0.4 0.4 0.3 0.2 1mA 10mA 100mA 1A 10A COMPLEMENTARY TYPE- FMMT491 PARTMARKING DETAIL - 591 PARAMETER SYMBOL VALUE UNIT 0.1 Collector-Base Voltage VCBO

Contextual Info: TSC5988 NPN Silicon Planar Medium Power Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Base 3. Collector BVCBO 150V BVCEO 60V IC 6A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.55V @ IC / IB = 6A / 300mA (Max.) Excellent gain characteristics specified up to 10A

Contextual Info: Power Transistor Array SLA8004 PT Tj Tstg V V V A A W W ºC ºC ICBO IEBO VCEO hFE VCE sat VFEC Test Conditions Ratings Test Conditions VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

Contextual Info: , Una. J C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY57 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=125V(Min.) • Low Collector Saturation Voltage:V CE (wt)=1.3V@lc=10A

Contextual Info: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA TELEPHONE: 973 376-2922 (212)227-6005 BUY73 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 200V(Min.) • Low Collector Saturation Voltage:V C E(.at)=1.4V@l c =10A

Contextual Info: . 1/ ' " H IP 5060 HARRIS S E M I C O N D U C T O R 1 Features Description Single Chip Current Mode Control 1C • 60V, 10A On-chip D M O S Transistor • Thermal Protection • Over-Voltage Protection • Over-Current Protection • 1MHz Operation or External Clock

Contextual Info: zSzmi-Conauctoi \P\odu.ci^, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUY58 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 160V(Min.) • Low Collector Saturation Voltage:V CE (.at)=1.3V@l c =10A

NTE72

Contextual Info: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required

Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A

2SA1568

Abstract: 2SC4065 FM20
Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 IEBO V V(BR)CEO ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A