TRANSISTOR 03 SMD Search Results

A SMD CODE MARKING

Abstract: IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 PG-TO263-3-2 SP0000-87982 3pn06 3PN0603
Contextual Info: IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow

2N04L03

Abstract: SPB80N04S2L-03 SPP80N04S2L-03
Contextual Info: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1

SMD CAPACITOR L29

Abstract: Philips 2222-581 SMD CAPACITOR L27 BLV897 Philips capacitor 166 ferroxcube 4322
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV897 FEATURES PINNING - SOT324B

PBLS4004D

Abstract: tsop6 marking 312
Contextual Info: PBLS4004D 40 V PNP BISS loadswitch Rev. 03 — 6 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBSS301ND

Abstract: PBSS301PD
Contextual Info: PBSS301ND 20 V, 4 A NPN low VCEsat BISS transistor Rev. 03 — 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

PBSS301ND

Abstract: PBSS301PD
Contextual Info: PBSS301PD 20 V, 4 A PNP low VCEsat BISS transistor Rev. 03 — 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

PBLS4003D

Abstract: tsop6 marking 312
Contextual Info: PBLS4003D 40 V PNP BISS loadswitch Rev. 03 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)

PBSS4160K

Abstract: PBSS5160K SC-59A
Contextual Info: PBSS5160K 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 6 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT346 (SC-59A) Surface-Mounted Device (SMD) plastic package.

transistor smd ZR

Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23

BLF6G20-110

Abstract: BLF6G20LS-110 RF35
Contextual Info: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance

BFQ149

Abstract: nxp power microwave transistor
Contextual Info: BFQ149 PNP 5 GHz wideband transistor Rev. 03 — 28 September 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

P2N0403

Abstract: IPB160N04S2-03 TO263-7 STH-39 TRANSISTOR SMD MARKING CODE ag ANPS071E SP0002-18151 sth39 D16-0 SP00021
Contextual Info: IPB160N04S2-03 OptiMOS - T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max 2.9 mΩ ID 160 A • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free)

358 SMD transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.

4N38

Abstract: 4N38A 4N38X E91231 8001L
Contextual Info: 4N38X, 4N38AX 4N38, 4N38A OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT l APPROVALS UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form l - SMD approved to CECC 00802 Certified to EN60950 by the following

Contextual Info: MOC8020, MOC8021 NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l Dimensions in mm 2.54 UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

E91231

Abstract: MOC8030 MOC8030X MOC8050 MOC8050X DB92113
Contextual Info: MOC8030, MOC8050 MOC8030X, MOC8050X NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 DESCRIPTION

Contextual Info: IS7000 IS7000X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001

ISP817

Contextual Info: ISP817X,ISP827X,ISP847X3,2,1 ISP817,ISP827,ISP847-3,-2,-1 LOW INPUT CURRENT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS l APPROVALS UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

ISP321

Abstract: E91231 ISP321-1 ISP321-1X ISP321-2 ISP321-2X ISP321-4 ISP321-4X
Contextual Info: ISP321-1X, ISP321-2X, ISP321-4X ISP321-1, ISP321-2, ISP321-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

ISP817

Contextual Info: ISP817X,ISP827X,ISP847X3,2,1 ISP817,ISP827,ISP847-3,-2,-1 LOW INPUT CURRENT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS l APPROVALS UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

Contextual Info: MOC8020, MOC8021 NON BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l Dimensions in mm 2.54 UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

sfh615

Abstract: SFH610-2 SFH610 sfh610-3
Contextual Info: SFH610-2X, SFH610-3X, SFH610-4X SFH610-2, SFH610-3, SFH610-4 LOW INPUT CURRENT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802

smd dual darlington transistor

Abstract: TRANSISTOR SMD 10p Theta-J theta-j solid smd ss 5 transistor Transistor z1 smd LDA100 LDA110 LDA200 LDA201
Contextual Info: CLARE C P / SOLI» STATE 2SE D 21M4TÛ4 0QD01GÖ S S3. LDÂ Series Solid-State Current Sensors The Theta-J LDA Series of solid-state current sensors is a family of optically coupled phototransistors that service a wide range of control applications where input to output electrical isolation is desirable.

s7d smd

Abstract: SMD s7d BKC Semiconductors DSAIH0002561
Contextual Info: Switching Diode SMD SOT-23 Plastic Use Advantages Used in applications where the highest circuit density and current performance are required. For applications as voltage isolators, pulse clippers, transistor biassing and as glue logic. Ideal for use in portable or cellular telephones,