TR SWITCH Search Results

TR-DB30AS

Abstract: DB30A 140VA EVE-004
Contextual Info: Sensors TEMPERATURE RESPONSIVE REED SWITCHES BARE TYPE Contact mode B TR-DB50 TR-DB50S3 «0.6 [.024] f 11.5 [.453] 21.5 [ 846] 57.0 [2.244] 05.8 [ 228] Contact mode B TR-DB30AS Contact mode M TR-DM50 -y -JT * IE 10.5 [.413] 21.5 [.846] max. 07.0 [.276]

25 V 500mA TRANSISTOR SOT23

Abstract: FMMT449 FMMT549 DSA003694
Contextual Info: FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0.1 1 I+ - Collector Current Amps VCE(sat) v IC Switching Speeds

2sc4983

Contextual Info: SAHYO LOW-SATURATl ON VOLTAGE TR SERI ES Small-Signal Transistors.NO.l The low-saturation voltage TR series, being excellent in VCE(sat) and switching characteristic at high current, are suited for use in inverters, converters, power ampl ifiers, electrical equipment.

digital countdown timer

Abstract: countdown timer programmable timer for appliances digital count up and countdown timer 4-digit lcd 6.4mm
Contextual Info: SÌ R Neuu Series' Of LCD Digital Countdoujn/Countup Timers For Multi-applications Model: TR 119 LCD Countdown/ Countup Timers Clock Model: TRI 18 2 Channel Jumbo display Timer Clock Specifications: M O DEL TR 112/TR 113 • 4-digit display countdown timer

2097B

Abstract: 2SC4520 FP207 marking 207
Contextual Info: Ordering number:ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Package Dimensions unit:mm 2097B [FP207] 1.5 5 4 3 2 1 0 to 0.1 0.2 0.3 1.75 1 : Base 1 PNP TR 2 : Collector 1 (PNP TR) 3 : Emitter Common 4 : Collector 2 (NPN TR)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features  Package  Two elements incorporated into one package (SBD + Tr)

Tx chain

Abstract: 41034
Contextual Info: A fa Application Not Design Solution-Amplitude Control M52 Application for Precise Power Control in a TX Chain for Cellular Application: M/A-COM Components SW-277, SW-279 TR High Power TR Switch AT-230 3 Bit Digital Attenuator AT-259 12 dB Voltage Variable Attenuator

FZT755

Abstract: FZT655 DSA003715
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT755 TYPICAL CHARACTERISTICS td tr ts µs VCE=10V ts COMPLEMENTARY TYPE – PARTMARKING DETAIL – td 0.6 Switching time 0.4 IC/IB =10 V 0.4 0.2 0.01 0.1 ABSOLUTE MAXIMUM RATINGS. 0.2 tr 0.1 0.01 0.1 1 I+ - Collector Current Amps

shortform

Contextual Info: I t =Alpl3exp(-t/T) K21 tr,tf = 8-20 ms IEC tr,tf = 10-700 ms EFP tr,tf = 0,5-10nS Total Protection Kilo-volts max 3s<20kA . any application: I time n a complex, structured world where we demand full integrity from our systems, it makes sense to fit the best

MMBT2222A

Contextual Info: This I tr Material In □ . m tr1 Discrete POW ER & Signal Technologies LM National Semiconductor” Surface Mount Transistors LU Copyrighted a a xa -C J3 tr By Ln —3 a NPN General Purpose Amplifiers and Switches V D evice No. SOT-23 Mark M M BT100 (N1)

STR-S6701

Abstract: STRS6701 sim 300 v 703 S6707 STRS6709 TRS67
Contextual Info: 28 1 1 3 .1 OFF-LINE SWITCHING REGULATORS - WITH BIPOLAR SWITCHING TRANSISTOR The S TR -S6703 and S TR -S6704 are specifically designed to meet the requirem ent for increased integration and reliability in off-line q u asi-resonant flyback converters. T hese devices incorporate the

FZT757

Abstract: FZT657 DSA003716
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT757 TYPICAL CHARACTERISTICS td tr ts tf µs µs 4 1.6 IC /IB=10 IB1=IB2=IC /10 200 3 V 150 100 1.2 0.01 0.1 0.6 1 ABSOLUTE MAXIMUM RATINGS. tr tf ts td tr 0.01 IC - Collector Current Amps 0.1 1 IC - Collector Current (Amps)

merlin gerin catalogue

Abstract: merlin gerin multi 9 SO iec 61558-1 merlin gerin buzzer merlin gerin 15219 SCHNEIDER 15218 Schneider Electric Multi 9 merlin gerin multi 9 merlin catalogue multi9
Contextual Info: TR bell and safety transformers Multi 9 Merlin Gerin The bell or safety transformer TR are used to obtain an extra low voltage from the low voltage network. Operation Bell TR: 15212 These transformers supply an extra low voltage ELV 8 V, 12 V, 24 V from a low voltage network (LV 230 V).

EIA-625

Abstract: GR-253-CORE GR-468-CORE NLT06-80-PA 1334 diode
Contextual Info: Preliminary Data Sheet February 2003 TriQuint Optoelectronics NetLight NLT06-80-PA 622 Mb/s 1550 nm Laser Transceiver for Extended Long Reach Applications CT Tr iQ ui n U t SE M IC ON D ® R nt TO ui DUC iQCON TrSEMI T NL iver e sc an Tr Tr NL OR an T sc

Contextual Info: GaAs MMIC SPDT FET 4 Watt TR Switch DC–2.5 GHz AH002R2–11 Features TR Switch Medium Power Handling, 4 Watts at 1 dB, Compression at 450 MHz, –10 Volts Bias Surface Mount Package –70 dBc THD at 850 MHz with 2 Watt Input Power J2 J1 Low Power Consumption

EIA-625

Abstract: GR-253-CORE GR-468-CORE NLT06-80-RA 1334 diode
Contextual Info: Preliminary Data Sheet February 2003 TriQuint Optoelectronics NetLight NLT06-80-RA 622 Mb/s 1550 nm Laser Transceiver with CDR for Extended Long Reach Applications SE M IC ON D CT Tr iQ ui n U t ® R nt TO ui DUC iQCON TrSEMI T NL iver e sc an Tr Tr NL OR

36dBmtyp

Abstract: SPDT SWITCH 6 GHZ 1 WATT AH002R2-12
Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch in 8 Lead SOIC Package DC-2.5 GHz 0 A lpha AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -10V Bias

pnp transistor 1000v

Abstract: FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)

A-20

Contextual Info: TR SERIES A SUBMINIATURE WASHABLE ROCKER SWITCHES Overview TR SERIES Number of poles 3 4 Electrical functions Single pole Double pole 6 9 7 8 2 ON ON MOM ON ON OFF OFF OFF - Terminals ON ON MOM MOM MOM P0 Y0 W0 WW MW Straight PC Bracket mounting Right angle, horizontal mounting

pnp transistor 1000v

Abstract: FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)

Contextual Info: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias

CA 339G

Contextual Info: * P , V I H j K A I fc L U K ^ U Il TC528257J / Z /FT /TR - 70 , TC528257J / Z / FT / TR - 80 irti B A TECHNICAL D A TA SILICON GATE CMOS TENTATIVE DATA 262.144WORDS x 8BITS MULTIPORT DRAM DESCRIPTION The TC528257J / Z / FT / TR is a 2M bit CMOS multiport memory equipped with a 262,144-words by

Contextual Info: PK_GB_08-35_dgrün-3.32 24.10.2002 13:50 Uhr Seite 23 Digital time switches, 1 channel 1 TE Din rail program 7d 24 h ±1h auto New TR 608 top Menu Menu Menu ok TR 608 top TERMINA Function: ● Step by step operator guidance by an integrated text line on the LCD display

pj 87 diode

Abstract: diode pj 87 pj 66 diode PJ+906+lv 0/pj 87 diode
Contextual Info: SK30GD066ET ?- O TR U$Q 407,- %*8,23.-, -', .6.,+ Absolute Maximum Ratings Symbol Conditions IGBT L$VW ?X O TR U$ @$ ?X O I[R U$ @$¥] *'-) ZJJ L NJ C ?- O [J U$ PI C ZJ C ^ TJ L ?X O IRJ U$ Z b- ?- O TR U$ PZ C ?- O [J U$ Tc C ZJ C IZJ C @$¥]O T : @$0%&