FZT755 Search Results

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IS S U E 3 - F E B R U A R Y 1995 FZT655 O m FEATURES * Low saturation voltage C O M P L E M E N T A R Y TY PE - FZT755 P A R T M A R K IN G D ET A IL - FZT655 B ABSOLUTE M A X IM U M RATINGS. SY M B O L

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - FEBRUARY 1996 O FEATURES * 25 Volt VCE0 * Low saturation voltage * Excellent hfE specified up to 6A pulsed . CO M PLEM EN TARY T Y P E - FZT655 PARTM ARKIN G D ETAIL - FZT755 ABSOLUTE MAXIMUM RATINGS.

FZT755

Abstract: FZT655 DSA003715
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR FZT755 TYPICAL CHARACTERISTICS td tr ts µs VCE=10V ts COMPLEMENTARY TYPE – PARTMARKING DETAIL – td 0.6 Switching time 0.4 IC/IB =10 V 0.4 0.2 0.01 0.1 ABSOLUTE MAXIMUM RATINGS. 0.2 tr 0.1 0.01 0.1 1 I+ - Collector Current Amps

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 3 - FEBRUARY 1995 O_ FEATURES * L o w s a tu ra tio n v o lta g e C O M PLEM ENTAR Y TYPE - FZT755 PARTM ARKING DETAIL - FZT655 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT655 ✪ ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage C 0.18 COMPLEMENTARY TYPE – FZT755 100 E 80 PARTMARKING DETAIL – FZT655 VCE=5V IC/IB=10 0.10 C 60 B 40 ABSOLUTE MAXIMUM RATINGS. 20

fzt 655

Abstract: FZT655 FZT755 DS33151 FZT655TA
Contextual Info: A Product Line of Diodes Incorporated Green FZT655 150V NPN MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 150V IC = 1A high Continuous Current Low Saturation Voltage Complementary PNP Type – FZT755

FZT755

Abstract: fzt655 DSA003712
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT655 ISSUE 3– FEBRUARY 1995 FEATURES * Low saturation voltage TYPICAL CHARACTERISTICS FZT655 ✪ C 0.18 COMPLEMENTARY TYPE – FZT755 - Normalised Gain % IC/IB=10 0.10 h V - (Volts) 100 0.01 0.1 1 10

Contextual Info: SOT223 PNP SILICON PLANAR M EDIUM POWER TRANSISTOR FZT755 ISSUE 5 – M ARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent h FE specified up to 1A pulsed . C E COM PLEM ENTARY TYPE – PARTM ARKING DETAIL – FZT655 FZT755 C B ABSOLUTE M AXIM UM RATINGS.

FZT755

Abstract: FZT655
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT755 ISSUE 5 – MARCH 2005 FEATURES * 150 Volt VCEO * Low saturation voltage * Excellent hFE specified up to 1A pulsed . C E COMPLEMENTARY TYPE – PARTMARKING DETAIL – FZT655 FZT755 C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT223 NPN SILICON PLANAR M EDIU M POWER TRANSISTOR ISS U E 4 - FEBRUARY 1996 O_ FEATURES * 25 Volt V,CEO * Low saturation voltage * Excellent hFE specified up to 6A pulsed . CO M PLEM ENTARY T Y P E PARTMARKING D E T A IL - FZT655 FZT755 ABSOLUTE M AXIM UM RATINGS.

Contextual Info: FZT755 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)1 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)125 V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)500m

fzt458

Contextual Info: SOT223 HIGH VOLTAGE TRANSISTORS Pinout : 1-Base, 2814-Collector, 3-Emitter Type hFE V ^C cont A Plot W M in/M ax 400 0.5 2.0 v CBO v CEO V 400 v CE(sat) M a x at lc / VCE m A / Volts Volts at lc / Ib mA 50/- 100/5 0.5 100/10 h Typ MHz Com plem ent NPN FZT658

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

FZT751

Abstract: FZT757 FZT705 FZT605 FZT651 FZT653 FZT655 FZT657 FZT753 FZT755
Contextual Info: SOT-223 NPN TRANSISTORS INCLUDING DARLINGTON h FE Type V CBO V C EO ^C(cont) •c m ^tot A W ^CE(sat) Min. MHz Ma x. at lc/lB Min. /Max. at Ic/V ce mA mA/Volts Volts Comple­ ment V V A FZT657 300 300 0.5 1.0 2.0 50/- 100/5 0.5 100/10 30 FZT757 FZT655 150

DMN62D4SDW-7

Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
Contextual Info: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

FMMTL717TA

Abstract: FMMT723TA FMMT560TA
Contextual Info: DATE: 24th September, 2010 PCN #: 2024 PCN Title: Qualification of Additional Wafer Fabrication Facility for PNP Bipolar Junction Transistors and Qualification of Alternate Die Attach Material for SOT223 Packaged Products.

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

ZTX752 equivalent

Abstract: transistor 42-10a data BC369 FXTA92 BSS98
Contextual Info: B o ok 1 Through Hole Com ponents Table of Contents Section Introduction 1 Selection Guide 2 Datasheets 3 Package Outline Dimensions 4 Tape and Reel Specifications 5 Surface Mount Alternatives 6 Alphanumeric Index 7 Book 2 Surface Mount Components - Available on Request

Contextual Info: Section S: Bipolar Transistors _ High Voltage Transistors ! 0 0 to 5 0 0 V olts SOT223 P!\IP High Voltage {Vq-o up BOOVI to Transistors Pinout Details: 1-Base, 2+4-Collector, 3-E m itter V CBO V CEO hFE lc Type V CE sat

FTZ605

Abstract: ZDT6790 fzt653 ZDT1049 ZTX415 ZTX796A fzt651 ZXGD3003E6 2DD1766 zetex transistor to92
Contextual Info: DIO 1943 BiPolar brochure Final Artwork 12/4/10 14:50 Page 2 BIPOLAR CORPORATE HEADQUARTERS AND AMERICAS SALES OFFICE TRANSISTORS 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Tel: 972-385-2810 E-mail: inquiries@diodes.com EUROPE SALES OFFICE

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)