TR 2N3904 Search Results

Contextual Info: This I tr Material Ln O NPN General Purpose Amplifiers and Switches b -J t-> LU Copyrighted a a a Device No. TN2219A •c a Case Style V CBO V TO-226 99 CEO ^EBO (V) Min (V) Min (V) Min 75 40 6 'cBO V (nA)@ “ Max 10 60 -r tr JT By J3 2N3903 TO-92 (92)

2N3904

Abstract: 2N39D4 2N3304 pc 525 2N39Q4 2n3904 225 h 2n3904 2N3904S 2N3903 2N39Q3
Contextual Info: 2N3904 S/S TR r-r. ELECTRONICS GENERAL PURPOSE TRANSISTOR Colledor-Emitter Voltage: VCEOm40V Collector Dissipation: ABSOLUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

3906 pnp

Abstract: 2N3903 2N3904 2N3905 2N3906 BOX69477 2N3906 MICRO ELECTRONICS E3040
Contextual Info: Vj.sl 2N3905 'i i /• 2N 3906 PNP SILICON PLANAR EPITAXIAL TRáNSISTOBS . » . . * •••• . • s . . . . . k. . V . ’ V • . t, *. . i . •• . . . . . . <y -

BCY58C

Abstract: bc547b ferranti BCY59A bcy59b 2N3903 2N3904 BC107A BC107B BC182 BC237A
Contextual Info: ELECTRICAL CHARACTERISTICS N.P.N. SM ALL SIG N AL TR A N SISTO RS hFE VcBO V ceo ICBO @ Min. Min. Max.atVcs lc Dice Type V V nA V Min. Max. mA BC546A BC546B BCY65EA BC182 2N3903 2N3904 BC107A BC107B BC237A BC237B BC547A BC547B BC550B BC550C BCY59A BCY59B BCY59C

2N3903

Contextual Info: 2N3903 S / S TR ELECTRONICS GENERAL PURPOSE TRANSISTOR Collector-Emitter Voltage: V c e o = 4 0 V Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25t:) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

3000 watts subwoofer circuit diagram

Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION

500w car audio amplifier circuit diagram

Abstract: 1200w power amplifier circuit diagram 1200w audio amplifier circuit diagram 1200w audio amplifier 1500w mosfet audio amplifier circuit diagram 800w audio amplifier circuit diagram TRIPATH TA3020 1200w Audio power amplifier circuit diagram 1200w car audio amplifier circuit diagram 4 channel 1200w audio amplifier circuit diagram
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on BRIDGED RB-TA3020-1, BRIDGED RB-TA3020-2, BRIDGED RB-TA3020-3 CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information-Preliminary

CIP-8E

Abstract: RWS-434 TWS-434 TWS-434A RWS 434 RF receiver CIP-8D 4 bit encoder CIP 8D Decoder RWS-434 RF Receiver HT12D decoder
Contextual Info: TWS-434 / RWS-434 http://www.rentron.com Module size W = 0.426” H = 0.6” lead spacing 0.1” Symbol Parameter Vcc Supply Voltage Ip Peak Current Vh Vl Fo Tr / Tf Po Dr Condition Min Typ Max Unit 2.0 - 12.0 V 2V / 12V - 1.64 / 19.4 - mA Input High Voltage

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

SCHEMATIC 1000w power amplifier stereo

Abstract: simple subwoofer 2.1 high pass filter schematic 3000 watts subwoofer circuit diagram 500 watt audio subwoofer high subwoofer 100 watts amplifier 5 channels 1000w audio amplifier circuit diagram 1000w audio amplifier circuit diagram 1000w subwoofer amplifier 300w audio amplifier circuit diagram 300w rms audio amplifier circuit diagram
Contextual Info: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.2 –December 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier

1000w subwoofer amplifier

Abstract: tp2350 SCHEMATIC 1000w power amplifier stereo EB-TK2350 5.1 speaker with subwoofer circuit diagram 1000w RB-TK2350 TRIPATH TA3020 1000w subwoofer amplifier PCB layout 500 watt subwoofer VN10
Contextual Info: Tr i path Technol ogy, I nc. - Techni c a l I nf or m a t i on TK2350 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information Revision 1.0 – May 2002 GENERAL DESCRIPTION The TK2350 (TC2001/TP2350 chipset) is a two-channel, 300W (4Ω) per channel Amplifier

1000w subwoofer amplifier

Abstract: TA3020 1500 watts subwoofer amplifier circuit diagram 300w audio amplifier ta 3020 tripath 3020 TRIPATH TA3020 subwoofer 300 watts amplifier Tripath Amplifier SCHEMATIC 1000w power amplifier stereo TRIPATH TECHNOLOGY TA3020
Contextual Info: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TA3020 STEREO 300W 4Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING (DPP™) TECHNOLOGY Technical Information Revision 2.0 – November 2001 GENERAL DESCRIPTION The TA3020 is a two-channel, 300W (4Ω) per channel Amplifier Driver IC that uses Tripath’s

2N3904

Abstract: h 2n3904 mps2221 2n5401 2n3904
Contextual Info: -3 1X1 X H CD D» CD ;0 CD N ro ui 70 H O -3 m \ o > OVERSEA STANDARD < Type No. NPN ! v CEO PNP •c V (mA) (mW) f jM IN . V CE (sat) MAX. hFE Pc VCE lC (V) (mA) >C ■b (V) (mA) (mA) (MHz) Cob Vce •c (V) (mA) SW Time M AX. VCB td tr tstg tf (PF).

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

2N3904

Contextual Info: TOSHIBA TRANSISTOR 2N3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm FOR GENERAL PURPOSE USE SWITCHING Af!D AMPLIFIER APPLICATIONS. MAX. FEATURES : . Low Leakage Current : ICEV= 50nA(Max.), Ijj£y=-50nA(Max.) <? VCE=30V, VBE=-3V . Excellent DC Current Gain Linearity

lm 3904

Abstract: 2N3904 T T3904 SST3904 ST3904 2n390 2N3904TA UMT3904 RXT3904 2N3904
Contextual Info: Transistors I NPN General Purpose Transistor UMT3904/SST3904/MMST3904/RXT3904/2N3904 •F eatures •External dimensions Units : mm 1 ) B V ceo < 4 0 V (lo— 1mA) 2 ) Com plem ents the UM T3906/SST3906/M M ST3906/RXT3906/PN 3906 •Package, marking and packaging specifications

2N3904C

Abstract: 1N916 20MS 2N3906C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x = 5 0 n A M a x . , lB L = 50n A (M ax.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.

common emitter amplifier 2N3904

Abstract: 2N3904 2N3904 hfe 1N916 2N3906 2N3906 NPN Transistor
Contextual Info: 4SE D • TCH7ES0 0017744 T « T 0 S 4 TOSHIBA TRANSISTOR 2N3904 SILICON NPN EPITAXIAL TYPE PCT PROCESS ri>i -23. TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING Af!D AMPLIFIER Unit in mm APPLICATIONS. FEATURES: . Low Leakage Current : IcEV=50nA(Max.), Igky=-50nA(Max.)

TRANSISTOR 2N3904

Abstract: 2n3904 950 2n3904 specification k 151 transistor PNP switching transistor 2N3904 mhz
Contextual Info: Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic

TRANSISTOR 2N3904

Abstract: MAM279 Probe Oscilloscope 2n3904 philips 2n3904 specification NPN, Si, POWER TRANSISTOR, PLASTIC 2n3904 950 EB-500 2N3904 2N3906
Contextual Info: Philips Semiconductors Product specification NPN switching transistor 2N3904 FEATURES PINNING • Low current max. 200 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic

Contextual Info: Discrete POWER & Signal Technologies I S 3 Iin^* ' |wJ 11 F ti S — .•!■-/ ‘y iC D N O y O T 'D R 2N3904 C * >\ MMBT3904 TO-92 SOT-23 BE Mark: 1A MMPQ3904 PZT3904 SOT-223 SOIC-16 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch.

2N3904U

Abstract: 1N916 2N3906U
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904U EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : ICEx=50nA Max. , IBL=50nA(M ax.) DIM Veb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage