TQ247 Search Results

S20D

Abstract: S20D100 S20D70 S20D80 S20D90
Contextual Info: ß k MOSPEC S20D70 Thru S20D100 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

Contextual Info: PRELIMINARY DATA SHEET vCES IXGH20N30 IXGH20N30S HiPerFAST IGBT ^C25 VCE sat typ t < Symbol Test Conditions VCES ^ VCGR vGES VœM > Maximum Ratings = 25°C to 150°C 300 V Tj = 25°C to 150°C; RGE = 1 MO 300 V Continuous ±20 V Transient ±30 V Tc = 25° C

3045 PT

Abstract: MBR30150PT CI 3060 elsys 2sc 2026 304S MBR3035PT rfltw
Contextual Info: E MBR3035PT- MBR30150PT TAIWAN SEMICONDUCTOR RoHS [Pb 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TQ-247AD C O M P L IA N C E m Features ❖ P la s tic m a te ria l u s e d ca rrie s U n d e rw rite rs L a b o ra to ry C la s s ific a tio n s 94V -Q '> Metal silicon Junction, m ajority c a rrlc r conduct on

ITH13F06P

Abstract: NC405C
Contextual Info: MITEL ITH13F06 High Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supsedes O ctober 1999, version DS4989-2.3 DS4989-3.0 May 1999 Key Parameters T h e IT H 1 3 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

BUK436W-1000B

Abstract: T0247
Contextual Info: Product specification Philips Sem iconductors Pow erM O S tran sisto r N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and

30UFR01

Abstract: 30UFR02 30UFR03 30UFR04 30UFR05 ADIX
Contextual Info: DIOTEC ELECTRONICS CORP EfiimD? GDOÜOb3 401 « D I X SÛE » DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: SESA-3002-A -T '-a v -v * TQ-247 (TQ-3P) 30 AMP SUPER-EFFICIENT RECTIFIERS

T0247

Abstract: BYW99P-200 BYW99PI-200 BYW99W-200
Contextual Info: S G S - T H O M S O N M M E L E @ ÌT [^ G M © i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES P R E L IM IN A R Y D A T A S H E E T FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES

VRM 12.5

Abstract: 60 AMP SCHOTTKY BARRIER RECTIFIERS SK6030C SK6040C SK6050C SK6060C SK6070C 0102-AA
Contextual Info: 204^107 □□□□□35 547 m j > I X DIOTEC ELECTRONICS CORP SÖE ]> DIOTEC ELECTRONICS CORP. D lC Data Sheet No.: SBDT-6000-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 ^T- O V Z l Fax: (310)767-7958 60 AMP SCHOTTKY BARRIER RECTIFIERS

Contextual Info: Power M anagem ent Division Power M anagem ent Division package styles - linear products T h e fo llow ing ta b l e p r o v i d e s a s u m m a r y o f show n along bo th colum ns o f this spread. I f you available p a c k a g e sty les for t h e lin e a r p r o d u c t

T0247

Abstract: 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240
Contextual Info: Power Management Division Please note that our 4th Generation power MOSFETs are currently available in Europe only. T0264 Power Management Division PowerMOS IV plastic power M OSFETs S e m e la b ’s P ow erM O S I V 1M range offers VMOS switching speeds, very low on-resiscance,

T0247

Abstract: T0247 package BYW99P-200 BYW99PI-200 BYW99W-200 BYW99W200 1MH7 33ili
Contextual Info: S G S -T H O M S O N M M ELE@ ÌT[^ GM ©i B Y W 9 9 P /P I/W HIGH E FFIC IEN C Y FAST RECO VERY RECTIFIER DIODES PR ELIM IN A R Y DATASHEET FEATURES • . ■ ■ . ■ SUITED FORSM PS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY

APT20GF120BRD

Contextual Info: APT20GF120BRD A dvanced POW ER T e c h n o lo g y 1200 v 32 a Fast IGBT& FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free­ wheeling ultraFast Recovery Epitaxial Diode FRED offers superior

4453 smd

Abstract: to247 f tab 4453
Contextual Info: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O IXGH12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C

E25 SMD diode

Contextual Info: Preliminary Data Sheet High Voltage IGBT with Diode IXSX35N120AU1 IXSX35N120AU1S CES C25 Combi Pack Short Circuit SOA Capability CE SAT 1200 V 70 A 4V PLUS TO-247 SMD (IXSX35N120AU1S) Symbol Test Conditions vCES vCGR v GES Tj = 25°C to 150°C; RGE = 1 Mi2

BUK436-800A

Abstract: BUK436-800B T0247
Contextual Info: Product specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,

J599

Abstract: e5200
Contextual Info: DIXYS HiPerFAST IGBT IXGH39N60B V CE sat = 600 V = 76 A = 1.7 V tn = 200 ns CES ^C25 Preliminary data Maximum Ratings Symbol Test Conditions V CES Tj =2 5°C to 150°C 600 V T,J = 25° C to 150° C; Riafc „ =1 600 V V GES Continuous ±20 V VGEM Transient

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP10N40E, PHB10N40E, PHW10N40E Avalanche energy FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated

0031D

Abstract: 30UFR01 30UFR02 30UFR03 30UFR04 30UFR05
Contextual Info: Efiim D ? DIOTEC EL EC T R O N I C S CORP SÛE » DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 u à L Tel.: 310 767-1052 Fax: (310)767-7958 GDOÜOb3 401 « D I X nyr Data Sheet No.: SESA-3002-A -T'-av-v * TQ-247 (TQ-3P) 30 AMP SUPER-EFFICIENT RECTIFIERS

IR 30DF

Contextual Info: Bulletin 12103 rev. B 07/97 International TOR Rectifier SAFEIR Series 30dps. GLASS PASSIVATED PLASTIC RECTIFIER IF av = 30 Amp 'fsm • 150° C Tj operation = 300 Amp VRRM UP t° 1200V • Glass Passivated chip junction • Low forward voltage drop • High Current Capabilities

SF2008PT

Abstract: SF2001PT 5A SF to-3p 5A SF 10
Contextual Info: E TAIWAN SEMICONDUCTOR tò RoHS C O M P L IA N C E SF2001PT - SF2008PT 20.0 AMPS. Glass Passivated Super Fast Rectifiers TQ-3P/TQ-247AD .22>JL2i I Features ATOIiti li T T 5 T ÎT •‘r '> ■> '?■ ^ ^ D u a l re c tifie r c o n s tru c tio n . p o s Itlvc c e n te r-ta p

BUK436-200A

Abstract: BUK436-200B T0247
Contextual Info: Product Specification Philips Sem iconductors Pow erM O S tran sisto r G ENERAL DESCRIPTION N -channel enh an cem en t m ode field-effect pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies SM PS , m otor control, w elding,

marking auh

Abstract: CPAZ 25CC MBR60100PT MBR6035PT 7s0 marking
Contextual Info: E TAIWAN SEMICONDUCTOR MBR6035PT - MBR60100PT 60 AMPS. Schottky Barrier Rectifiers tò RoHS TO-3P/TQ-247AD CO M PLIANCE I -tnjrif- [ R ip Features <> •fr ■fr <> '> •f- P lasllc m a tcrlal used carrlcs Uncerw rl lers Laboratory C lassifications 94V-0

SBL3040PT

Contextual Info: SBL3030PT AND SBL3040PT SCHOTTKY RECTIFIER Reverse Voltage - 30 and 40 Volts Forward Current - 30.0 Amperes FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 ♦ Metal to silicon rectifier, majority carrier conduction