TQ220 Search Results

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

Contextual Info: TOSHIBA 2SJ312 Field Effect Transistor Industrial Applications TQ-220FL Unit in mm Silicon P Channel MOS Type L2-7i-MOS IV High Speed, High Current Switching Applications Features • 4-Volt G ate Drive • Low Drain-Source O N R esistance - r d s (ON) = S O m Q (Typ.)

TA8659AN

Abstract: toshiba TA8615N TA8601BN TA8655an ta8615 7644BP ta7644bp ta8615n ta8659a TA7622AP
Contextual Info: TOSHIBA 5. Video/Chroma Systems 5-1 ICs fo r V id e o /C h ro m a \F u n c tio n Video Process­ ing Type NoN ^ Chroma Processing NTSC PA L SECAM Deflection System System Switch Package Remarks TA7608CP •■ ■■ - - - - NTSC Video/Chroma DIP 28 TA 7644BP

SMP60N06A

Abstract: SMP60N06
Contextual Info: IflE » SILICONIX INC f X Siliconix JL M • 6SSM73S 0014177 4 ■ SMP60N06A in c o rp o ra te d T '3^-13» N-Channel Enhancement Mode Transistor TQ-220AB TOP VIEW PRODUCT SUMMARY V BR|DSS " y 0.018 60 Id (A 60 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25° C Unless Otherwise Noted)

Contextual Info: Tem ic SUP/SUB65P06-20 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) Id (A) r DS(on) ( ^ ) 0.020 -6 0 -6 5 a T0-220AB o TO-263 < 1 n DRAIN connected to TAB G D S Top View GD S Ô D SUB65P06-20 Top View SUP65P06-20

HERA167G

Contextual Info: ULTRA-FAST/HIGH EFFICIENCY RECTIFIERS OPERATING AND STORAGE TEMPERATURE - 6 5 ° C to + 1 50°C Maximum Average Rectified Current @ Half-Wave Resistive Load . Maximum SURGE PART NUMBER . :RèxMrsS#.;• Voltage 6.0 Maximum Reverse :M Current @ PRV Maximum Forward

Contextual Info: SUP/SUB75N06-07L S ilic o n ix N-Channel Enhancement-Mode Transistors Product Summary I d A rDS(on) (ß ) 0.0075 @ VGS = 10 V V(BR)DSS 60 75a 0.0085 @ VGS = 4.5 V D Q TO-220AB o TO-263 t 1 0— DRAIN connected to TAB l! TPT Top View SUB75N06-07L GD S Top View

1262-33

Abstract: DDPAK package tc1262
Contextual Info: Semiconductor, Inc TC1262 500 mA FIXED OUTPUT CMOS LDO FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC1262 is a fixed output, high accuracy typically +0.5% CMOS low dropout regulator. Designed specifically for battery-operated systems, the TC1262’s CMOS con­

Contextual Info: SUP/SUB75N03-07 Siliconix N-Channel Enhancement-Mode Transistors New Product ^oG PRODUCT SUMMARY r DS ON V (BR)DSS (V) •d (A) (-2) 0.007 @ V GS= 10 V 75a 0.01 @ VGS= 4.5 V 70 30 D Q TO-220AB o TO-263 t DRAIN connected to TAB 1 in G D S Top View o G D S

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

2SJ241

Contextual Info: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt G ate Drive

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

TA79012P

Abstract: TA79010P jisso TA79005P TA79006P TA79008P TA79009P aloa TA79024P
Contextual Info: BIPO LA R LIN EAR TA79005P— TA79024P IN T E G R A T E D C IRCU IT S IL IC O N M O N O LITH IC 1A THREE T ER M IN AL N E G A T I V E VOLTAGE REGU LATORS -5V , - 6 V, -8V , -9 V , -10V, -1 2 V , -15V, -1 8 V , -2 0 V , Unit in mm -24V 1 0.3 MAX. 0&6±O.2 • Suitable for C-MOS, TTL, and the other Digital

78m24p

Abstract: SA35V AC75 TA78M12P TA78M15P TA78M18P TA78M20P 8M05P Zener diode 5.6 itt lc 945 transistor
Contextual Info: JA78M05P~ TA78M24P• BIPOLAR LINEAR IM JEO RATEO^IRCUIT 0.5A THREE TERMINAL POSITIVE VOLTAGE REGULATORS 5V, 6V, 8 V , 9V, 10V, I2 V , 15V, 18V, 20V, 24V The TA78MOO series of fixed-voltage monolithic integrated circuit voltage regulators is designed for a wide range of applications.

lm2567t

Abstract: S8360 ADJUSTABLE VOLTAGE AND CURRENT REGULATOR 12v 30a N5822 cq047 UPL1J101MRH nichicon fx 230v to 6v step down transformer 230v to 75v 25w transformer BEL 100p transistor datasheet
Contextual Info: a t i o n a l S e m i c o n d u c t o r 9 LM 2587 SIM PLE SW ITCHER* 5A Flyback R egulator General Description Features The LM 2587 series of regulators are m onolithic integrated circuits specifically designed for flyback, step-up (boost , and forw ard co nve rter applications. The device is available

siemens relay dc 12v

Abstract: pin diagram of bts 149 Siemens Smart Power IC Siemens temperature sensor t47 Q67060-S6503-A3 siemens relay 131E Q67060-S6503-A2 bts149
Contextual Info: fl235 b05 OOälBOä bñT SIEM ENS HITFET BTS 149 Smart Lowside Power Switch Features Product Summary • • • • • • • • • Continious drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input

ZN 3055 transistor

Abstract: Transistor w1l 7805 TO-220 V7233 5241E V7331 V5237B V-5240-k mk 5373 V7622
Contextual Info: ASSMANN Technical Data & Abbreviations Electronic C om ponen ts Al Surface nature AI203 Aluminiumoxyd Al Mg Si 0,5 Special aluminium alloy {extruded Al 99,5 Special aluminium alloy band) GD-AI Si 12 Special aluminium alloy (Die-cast) BeO Berylliumoxyd K

Contextual Info: 6 2 3 5 b O S 0 0 6 1 3 1 4 =163 S IE M E N S HITFET BTS 917 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source voltage Input protection ESD On-state resistance Thermal shutdown

Contextual Info: û235bOS 00Û13B3 1 % SIEMENS HITFET BTS 933 Smart Lowside Power Switch Product Summary Features • • • • • • • • • • • Logic Level Input Continious drain source Input protection ESD On-state resistance Thermal shutdown Current limitation

3CA1837

Abstract: 3DA4793 sunshine
Contextual Info: s u n s h in e S U N S H IN E SCIENCE TO-22QF 3DA4793 Plastic-Encapsulate Transistors TQ-220F TRANSISTO R NPN FEATURES . High Transition Frequency : fT=100M Hz(Typ) . Com plem entary to 3CA1837 I Collector Power Dissipation 2. COLLECTOR 1 . BASE PCM : 2W (Tamb=25*C)

ECG2322

Abstract: s34 zener diode diode t48 s34 diode philips ECG2328 philips ECG2329 ECG2328 ECG2331 ECG zener diode 2 Amp zener diode
Contextual Info: PHILIPS E C G INC SHE D Transistors c o n rd j ECG Type Description and Application • bbSB^fi 000715^ S34 « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b o BV c e o

E3043

Abstract: E3062A
Contextual Info: fl23Sb05 0001337 4ñ0 S IE M E N S HITFET BTS 949 Smart Lowside Power Switch Features Product Summary • Logic Level Input Continious drain source • Input protection ESO On-state resistance • Thermal shutdown Current limitation • Overload protection

BTS141

Abstract: siemens relay GPT05164 Q67060-S6502-A2 Q67060-S6502-A3 H24b4
Contextual Info: SIEMENS HITFET BTS141 Smart Lowside Power Switch Features Product Summary • • • • • • • Continuous drain source voltage On-state resistance Current limitation Load current ISO Clamping energy Logic Level Input Input protection (ESD) Thermal shutdown

2SD1264

Abstract: 2SB940 2SB940A 2SD1264A IC vertical panasonic
Contextual Info: Pow er Tra n sisto rs 2 S D 1 2 6 4 , 2SD1264, 2SD1264A 2 S D 1 2 6 4 A Silicon NPN Triple-Diffused Planar Type Package Dim ensions A F Pow er Amplifier T V vertical Deflection Output Com plem entary Pair with 2SB940, 2SB940A U n it ! mm 4.4m ax. _10.2m ax.