TP62601 Search Results

TRW62601

Abstract: 328A-03 BALLAST MOTOROLA Motorola 305 motorola rf Power Transistor RF TRANSISTOR 1 WATT TP62601
Contextual Info: MOTOROLA Order this document by TP62601/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Oscillator Transistor TP62601 . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz

TP62601

Contextual Info: TP62601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP62601 is a Common Collector Device Designed for Applications up to 3.0 GHz Band. PACKAGE STYLE 230 2L FLG FEATURES INCLUDE: • Hermetic Package • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

Contextual Info: TP62601 NPN RF POWER TRANSISTOR DESCRIPTION: The ASI TP62601 is a Common Collector Device Designed for Applications up to 3.0 GHz Band. PACKAGE STYLE 500 4L FLG FEATURES INCLUDE: • Hermetic Package • Gold Metallization • Emitter Ballasting MAXIMUM RATINGS

115AG

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP62601 The RF Line Microwave Power Oscillator Transistor MICROWAVE POWER OSCILLATOR TRANSISTOR . . . d e s ig n e d fo r u s e a s p o w e r o s c illa to rs at fr e q u e n c ie s to 3 G H z w ith ty p ic a l o u tp u t

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability

trw62601

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power O scillator TVansistor . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz • High Output Power 1.2 W Typ @ 2.5 GHz

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA