2SA708 NEC
Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03
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d29e9tp5821bcw93a2sa560+13bc488bc488-18bc488-5bc488l2sa708 necmmst8598150jjbcw93b motorolabc361-10low-power silicon pnpbc488a6u sot-232sa1283c
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TP590
Abstract: TP852 TP593 TP541 tp573 TP572 TP851 TP579 TP580 TP568
Contextual Info: Steel Square Covers 411/16" SQUARES COVERS – CUBIC INCH CAPACITY SEE BELOW TP569, TP570, TP571, TP573, TP575 TP574, – TP582, TP529, TP531 TP584, TP586, TP589, TP593, TP541, TP543 TP851* TP852* Cat. # Description Std. Unit Pkg. Wt. Lbs. Per 100 Capacity Cu. In.
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tp569tp570tp571tp573+15tp575tp574tp582tp529tp531tp584tp590tp852tp593tp541tp572tp851tp579tp580tp568
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2N5832
Abstract: 2n6008
Contextual Info: ALLEGRO MICROSYSTEMS 8514019 INC SPRA G U E. =13 » • 0SD433Ô G 0 G 3 S Ô C1 Ô ■ S E M IC O N D S / I C S 93D 03589 ALGR D T 'ü - 1 - PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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0sd433tp5810tp5812tp5814+8tp5816tp5818tp5820tp5822tp5824tp58252n58322n6008
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MOSFET 2301
Abstract: cxd9872 cxd9872k a6019 ah41 cps ec nvs mbx149 MMC2301 a6806 TX39D80VC1GAA transistor c1093
Contextual Info: M C N 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date B Date 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 1215 Page
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lvds/12/15c1232c1230470pf+16pr412pr169pr168pc175pc174c1309mosfet 2301cxd9872cxd9872ka6019ah41 cps ec nvsmbx149mmc2301a6806tx39d80vc1gaatransistor c1093
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AR5212
Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)
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isl6225vccar5212ar5312diode 39b2+7ar5112 ar5213ar5211st c739fd507u508-3ar533ct516
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54B2
Abstract: HH-1M1608-600JT 20B3 diode tp807 TP889 hh-1m1608 RC410M IR 30D1 7E TP828 t9504
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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rc410mdsb450ba41-00615asheet18+15sheet19sheet20tp682tp685tp68654b2hh-1m1608-600jt20b3 diodetp807tp889hh-1m1608rc410mir 30d1 7etp828t9504
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BTB 600 BR
Abstract: tp5372 2N5087 2N5142 2N5221 2N5226 2N5227 2N5354 2N5355 2N5356
Contextual Info: SPRAGUE/SEMICON» GROUP 8 5 140 19 SPRAGUE. T 3 ~ T ~ M flSIHflSO D G G 3 S 1 h ' b S E M I C O N D S / ICS • 93D 0 3 5 9 6 J P _ / T'û 7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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00035u2n5087tp5138tp5139+102n5142o-226aa/stylebtb 600 brtp53722n52212n52262n52272n53542n53552n5356
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BTB 600
Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. il ï • DSD433Ô DODSSIh S ■ ‘ü ^ ‘ S E M I C O N D S / ICS 9 3 D 0 3 5 9 6 3> T'«t7-9ô PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C
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dsd4332n5087tp5138tp5139+72n51422n52212n52262n52272n53542n5355btb 600
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2N5449
Abstract: MPS-K72 2N3694 2N3693 2N5143 2N5447 k72 npn k72 transistor Three-Five 2N5127
Contextual Info: Econoline P la stic -M o ld e d Silicon S E P T ” Transistors i GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS TO-92 Package E BC Pinning D -C C U R R E N T G A IN >- Type No. cc < o CL Pd (h F E ) Lim its T a = V(BR| V(BR) V(BR) ICBO Conditions nA 25 C C BO CEO EBO
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2n36942n51272n51312n5132+145n5451tp5137tp5139tp5824tp5825tp58262n5449mps-k722n36932n51432n5447k72 npnk72 transistorthree-five
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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C6426
Abstract: C6419 c6492 Inventec C6384 STV 5v sense DG board C6782 D1047 C6464 powerpad_4a
Contextual Info: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-8 - DOTHAN PROCESSOR 9-13 - ALVISO 14-17 - DDR 18-20 - ATI_M24_P 21-22 - VGA DDR 23-27- ICH6-M 28 -LCD INTERFACE 29 - HDD CONNECTOR 30 - CD-ROM CONNECTOR
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r6970r6971c2507c2505+16r2502r2509127107mh020g200ztfix2501fix2502fix2500c6426c6419c6492inventecc6384stv 5v sense dg boardc6782d1047c6464powerpad_4a
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BA41-00695A
Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS
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ba41-00694aba41-00695ayonah667047nf+11rhu002n0612-c4tp1274conn-50p-fpcsocket am2samsung 30 pin lvds diagram25a44smd ac p27cy28447samsung electronics ba41gnd103
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MEC5025-NU ec
Abstract: ECE1077 ece5021 BCM5906 EMC4001 fds8884 RN752 WISTRON MEC5025-NU amp foxconn
Contextual Info: 5 4 3 2 1 D D Beyonce UMA Schematics Document C C uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 2008-05-12 B B REV : -5 DELL:A00 <Variant Name> A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size
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tps51120emc4001cy28547lfxc667/800mhz+10533/667mhzmec5025-nu ecece1077ece5021bcm5906fds8884rn752wistronmec5025-nu ampfoxconn
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MEC5025-NU amp
Abstract: MEC5025-NU ec fds8884 TPS2231 foxconn Wistron Corporation Beyonce UMA Wistron Corporation AT49 FLASH MEMORY FILE schematic intel g41 stac9228x5
Contextual Info: 5 4 3 2 1 D D Beyonce UMA Schematics Document C C uFCPGA Mobile Merom Intel Crestline-GM + ICH8M 2008-02-21 B B REV : -2 DELL:A00 DB5 A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title Size A3 Beyonce UMA
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tps51120emc4001cy28547lfxc667/800mhz+11533/667mhzmec5025-nu ampmec5025-nu ecfds8884tps2231foxconnwistron corporation beyonce umawistron corporationat49 flash memory fileschematic intel g41stac9228x5
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k72 transistor
Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Contextual Info: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.
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mps-k20mps-k21mps-k22mps-a20+14mps-k70mps-k71mps-k72mps-a70mps-k20/mps-k7010vdck72 transistortransistor k722n5143k72 npntransistor c 2026544sk70 packagetp6224
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BCW91B
Abstract: 2N3077 BFR40 2SC1211 2N3895A MMST8098 KT503G 2N2489A LOW-POWER SILICON NPN 2N736
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 SO 65 70 75 80 85 90 95 726 V BR CEO hFE (V) V(BR)CEO 5 Manufacturer BFT30 MPS651 2N910 2N2522 2N760B 2N1566 2N736 MM2483 2N2483 2N3077 fT (Hz) Cobo Max (F) leBO Max (A) V(BR)CBO (V)
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bft30mps6512n9102n2522+142n760b2n15662n736mm24832n24832n3077bcw91bbfr402sc12112n3895ammst8098kt503g2n2489alow-power silicon npn
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AES2501
Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE-R C B CPU : Chip Set :
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controllerp1311tp1312tp1313tp1314+16tp1251tp1252tp1253tp1254tp1255tp1256aes2501ics954305tp960c703 diodetp1332vdd3310tp95033b3 diodedebug32block diagram of intel 8254 chip
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TP5000
Abstract: TP5056 TP4506 TP5351 TP5046 TP4656 TP4650 TP4780 TP5006 TP5299
Contextual Info: 1 2 9TP4721 10 TP4722 T4 TP4723 13 TP5086 TP5087 1 2 TP5088 TP4727 3 4 TP5089 BPRI# W1 A7# DEFER# A8# DRDY# A9# W2 Y4 A10# Y1 A11# A12# U1 A13# AA3 DBSY# RESET# RS0# REQ1# RS1# REQ2# RS2# BANIAS REQ3# T1 REQ4# 478FCPGA 13 13 13 13 C 13 13 AE4 24 TP5097 TP5098
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3tp4715tp47165tp4717tp4718+167tp4719tp47209tp4721tp4722tp4728tp4729tp5000tp5056tp4506tp5351tp5046tp4656tp4650tp4780tp5006tp5299
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TP4506
Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4
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tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765
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PDTA144E
Abstract: CXD98 H0068NL R1453 Diode C1280 TPS2231 a6019 MAX8734AEEI T A6806 R1318
Contextual Info: 5 4 3 2 1 Schematics Page Index Title / Revision / Change Date D C B Page 01 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 Rev. 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00 1.00
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s-vi2/15c1232c1230470pf+16pr412pr169pr168pc175pc174c1309pdta144ecxd98h0068nlr1453diode c1280tps2231a6019max8734aeei ta6806r1318
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b712 smd
Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
Contextual Info: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood
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sfd-p10kscd-p10k24sdd-p10k8srw-p10k8+16sfd-p10escd-p10e24sdd-p10e8srw-p10e82200maieee1394b712 smdschematic diagram inverter 2000wic25n040mt702ct712mhn2200atr888 smb diodetp2256tp2350c840 dell
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2N5832
Contextual Info: 8 5 1 4 0 1 9 SPR A G U E. Û513Ô5Ü •=13 SP RA GU E/SEN IC OND GROUP OGOBSfl^ SEM IC O N D S/ IC S T 93D 0 3 5 8 9 D PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain
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tp5824tp58252n58302n5831+62n5832tp59612n59982n60082n64262n6427
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dell charger circuit diagram
Abstract: mlvg0402 CRESTLINE-GP-U-NF71 MEC5025-NU amp foxconn fds8884 TSLVC08APW-1-GP Wistron Corporation Beyonce UMA EMC4001 Wistron Corporation
Contextual Info: 5 4 3 2 1 D D www.kythuatvitinh.com uFCPGA Mobile Merom Beyonce UMA Schematics Document C C Intel Crestline-GM + ICH8M 2008-02-21 B B REV : -2 DELL:A00 DB5 A A Wistron Corporation 21F, 88, Sec.1, Hsin Tai Wu Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C.
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tps51120emc4001cy28547lfxc667/800mhz+9dell charger circuit diagrammlvg0402crestline-gp-u-nf71mec5025-nu ampfoxconnfds8884tslvc08apw-1-gpwistron corporation beyonce umawistron corporation
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55b1 SMD
Abstract: 55B3 56B3 AM3 1A 12B nvidia NV43 audio woofer TP730 k4d553235f-vc2a smd code capacitor c435 S3F944
Contextual Info: 4 3 SAMSUNG PROPRIETARY 2 1 THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D CICHLID II Sheet 1. COVER Sheet 2 - 5. DIAGRAM Block/Power & ANNOTATIONS
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dothan533ba41-00489aba41-00537asheet16+15sheet17sheet18tp722tp717tp98955b1 smd55b356b3am3 1a 12bnvidia nv43audio woofertp730k4d553235f-vc2asmd code capacitor c435s3f944
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