TP4N Search Results

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

STP4NB80

Contextual Info: TP4NB80 TP4NB80FP N - CHANNEL 800V - 3 iî - 4A - TO -220/T0220FP PowerMESH MOSFET TYPE V S TP4N B80 STP 4N B80FP • . . . . dss 800 V 800 V R D S o n Id 3.3 Q. 3.3 n 4 A 4 A TYPICAL RDS(on) = 3 £1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

SWITCHING WELDING SCHEMATIC BY MOSFET

Abstract: Q575
Contextual Info: SGS-THOMSON !LiM iO gS TP4NB50 TP4NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PRELIMINARY DATA TYPE TP4NB 50 S TP4N B 50FP . m . . . V dss RDS(on Id 5 00 V 500 V < 2.8 a < 2.8 a 3.8 A 2.5 A TYPICAL RDs(on) = 2.5 Q, 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

irf4321

Abstract: 4N50 MTM4N50 IRF830 MTP4N50 irf4304 IRF432 IRF430 IRF431 IRF433
Contextual Info: A4 FAIRCHILD SEMICONDUCTOR IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD mamm am mam i DE J 341T a7 M O D E T i n 1 h A Schlumberger Company Power And Discrete Division Description T-39-11 TO-204AA TO-22QAB

Contextual Info: MOTOROLA Order this document by TP4N40E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N40E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

Contextual Info: ¿ 5 4 40 4 40 SGS-THOMSON ¡UÈTO « 7 STP NA STP NA FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP4N A 40 TP4N A 40FI V dss RDS on Id 400 V 400 V <20 <20 4 A 2.8 A . TYPICAL R Ds(on) = 1.7 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING

SC06140

Abstract: stp4n90fi STP4NA90 STP4NA90FI STP4N90 SC06-1
Contextual Info: _ 9 r z T S ^ 7# G S - T H O M S O 3 5 r 0 2 N £ t o ^ « ^ e m iig r a « ! 3 4 N > ^ 9 (^ S T P iN A 9 0 FI TYPE S TP4N A90 TP4N A 90FI • ■ . . . . . V dss RDS(on Id 900 V 900 V A A -fc. -&■ ¡0 so

Contextual Info: TP4NC60 TP4NC60FP N-CHANNEL 600V-1.8 iì -4.2 A TO-220/TO-220FP _ PowerMESH II MOSFET PRELIMINARY DATA TYPE S TP4N C 60 TP4NC 60FP • . . . . V dss RDS on Id 600 V 600 V < 2 .2 Q. < 2 .2 Q. 4.2 A 4.2 A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: MOTOROLA O rder this docum ent by M TP4N80E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP4N80E TMOS E-FET ™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination

IRF510

Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 TP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power

MSK4900

Abstract: IGBT desaturation protection -55C to 125C
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 600V ISOLATED HALF BRIDGE GATE DRIVER 4900 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Floating Channels up to 600V Up to 8 Amp Peak Source and Sink Current De-Saturation Protection/Shutdown Individual ON, OFF and Soft Shutdown Pins for Each IGBT Gate

75 LS 541

Abstract: HD6413002F Srfm hitachi ast1 a19t
Contextual Info: Hitachi Microcomputer H8/3002 HD6413002 Hardware Manual HITACHI Notice When using this document, keep the following in mind: 1. This document may. wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the

STP4NB100

Contextual Info: TP4NB100 TP4NB100FP N - CHANNEL 1000V - 40 . - 3.8A - TO-220/TO-220FP PowerMESH MOSFET TYPE V dss R D S o n S T P 4 N B 1 00 S T P 4 N B 1 00FP 1000 V 1000 V < 4 .4 Cl < 4 .4 Cl • . . . . Id 3 .8 3 .8 A A TYPICAL RDS(on) = 4 £2 EXTREMELY HIGH dv/dt CAPABILITY

Contextual Info: VM65014 VTC Inc. Value the Customer ANALOG PRML CHANNEL DETECTOR 960801 PRELIMINARY FEATURES CONNECTION DIAGRAM • Register programmable user data rates from 46 to 140 Mbps • Sampled data read channel with maximum likelihood Viterbi detection • Programmable continuous-time filter with two

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TER22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

tdr22

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

TDR15

Abstract: TD18N TD68N TP82N TP68N
Contextual Info: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A

Contextual Info: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:

55425

Abstract: Maximum Likelihood block diagram
Contextual Info: VM ÌS IS J!? ,;- 950801 FEA TU RES • Register Programmable User Data Rates From 46 to 140 Mbps • Sampled Data Read Channel With Viterbi Qualification • Programmable Continuous-Time Filter With Two Independently Variable Real Zeros and Up to 13 dB Boost

KL731H

Abstract: TP33N KL731E
Contextual Info: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating

Contextual Info: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00