TP254 Search Results

Contextual Info: TP2535 TP2540 £jUlt — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* DICE+ -350V 25Q -2.4V -0.4A TP2535N3 — TP2535ND -400V 25Q -2.4V -0.4A

Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

tp5d

Abstract: marking code tp5d TP2535 TP2535N3 TP2540 TP2540N3 TP2540N8 TP2540ND
Contextual Info: TP2535 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 -350V 25Ω -2.4V -0.4A TP2535N3 — — -400V 25Ω -2.4V -0.4A TP2540N3 TP2540N8

TP2535

Abstract: TP2535N3 TP2535ND TP2540 TP2540N3 TP2540N8 TP2540ND
Contextual Info: TP2535 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 -350V 25Ω -2.4V -0.4A TP2535N3 — TP2535ND -400V 25Ω -2.4V -0.4A TP2540N3

Contextual Info: TP2540N8 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)400m @Temp (øC)150õ IDM Max (@25øC Amb)1.2 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

Contextual Info: Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TP2540 General Description Low threshold -2.4V max. High input impedance Low input capacitance (60pF typical) Fast switching speeds Low on-resistance

TP2540

Contextual Info: Supertex inc. TP2540 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2540 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

diode 400V 4A

Abstract: TP2540 TP2540N8 TP2535 TP2535N3 TP2535ND TP2540N3 TP2540ND ,tp2535
Contextual Info: TP2535/TP2540 TP2535 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* DICE† -350V 25Ω -2.4V -0.4A TP2535N3 — TP2535ND

2wl1

Abstract: TP254S
Contextual Info: 1EE D I b3b7254 OOflfllöS 1 | M Q T O R C L A SC MOTOROLA X S T RS /R F S E M IC O N D U C T O R s TECHNICAL DATA TP254 TP254S The RF Line UHF Power Transistors . . . d e sign ed for 5 to 10 V olt U H F large-signal am plifier applications in industrial and

Contextual Info: TP2540N3 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)300m @Temp (øC)150# IDM Max (@25øC Amb)600m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55

tp5d

Abstract: tp2540n8-g SITP TP2540 TP2540ND
Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

TP2540

Contextual Info: TP2540 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TP2540 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

tp5d

Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

tp5d

Abstract: TP2535 TP2535N3 TP2540 TP2540N3 TP2540N8 TP2540ND 04a marking
Contextual Info: TP2535 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† -350V 25Ω -2.4V -0.4A TP2535N3 — — -400V 25Ω -2.4V -0.4A

Contextual Info: TP2535 Çp S u p ertex; inc . TP254° Low Thresh old P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R d s ON (max) Order Number / Package V GS(th) l[)(ON) (max) (min) TO-92 DICEt TO-243AA* -350V 25£i -2.4V -0.4A TP2535N3

Contextual Info: — TP2535 TP2540 * S u p e r t e x m c . _ Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / ^DS O N V(3S(th) ^D(ON) BVDgs (max) (max) (min) TO-92 TO-243AA* Diet -350V 250

Contextual Info: TP2535 TP2540 S u p e rte x In c ._ Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^ D S O N ^ G S (th ) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* Diet -350V 25ß

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: 0 Supertex inc. TP25D Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * t Order Number / Package b v dss / ^D S ON ^G S(th) I d (ON) BV dgs (max) (max) (min) TO-92 TO-243AA* DICEt -350V 25Q -2.4V -0.4A TP2535N3

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

pwm lm2903

Abstract: TP2540 VN2220 HV430 HV430DB1 LM2903 TN2540 lm2903 pwm
Contextual Info: HV430DB1 5 REN Ring Generator Specifications Introduction The Supertex HV430DB1 demo board is an efficient, switchmode sinewave ringing generator utilizing the HV430 integrated circuit. It contains all the circuitry necessary to drive a 5 REN North American ringer load. Simply connect