A052109 Search Results
A052109 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Supertex inc. TP2535 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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tp2535125pfdsfp-tp2535a052109 | |
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Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This |
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tp2540125pfdsfp-tp2540a052109 | |
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Contextual Info: TP2540 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage |
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tp2540125pfdsfp-tp2540a052109 | |
sivp
Abstract: marking n3 VP0106 125OC VP0106N3-G
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vp0106dsfp-vp0106a052109sivp+3 | |
TP2535
Abstract: sitp TP2535N A052
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tp2535125pfdsfp-tp2535a052109+3 | |
SIVP
Abstract: marking n3 TRANSISTOR N3 VP0109 125OC VP0109N3-G VP0109ND
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vp0109dsfp-vp0109a052109sivp+5 | |
sivn0808l
Abstract: 0808L VN0808 vn 0808l
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vn0808dsfp-vn0808a052109sivn0808l+2 | |
sivp
Abstract: sivp VP0104 VP0104 TO-92- datasheet VP0104N3 125OC VP0104N3-G 500/250/sivp VP0104
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vp0104dsfp-vp0104a052109sivp+6 | |
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Contextual Info: Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode normally-off transistors utilize a lateral MOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices |
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lp0701dsfp-lp0701a052109 | |
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Contextual Info: VN0808 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities |
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vn0808dsfp-vn0808a052109 | |
LP0701LG-G
Abstract: 125OC LP0701 JEDEC drawing
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lp0701dsfp-lp0701a052109lp0701lg-g+2 | |
125OC
Abstract: VP0550
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vp0550dsfp-vp0550a052109125oc | |
125OC
Abstract: LP0701
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lp0701dsfp-lp0701a052109125oc |